METAL-CONTACT INDUCED CRYSTALLIZATION IN SEMICONDUCTOR DEVICES
    1.
    发明申请
    METAL-CONTACT INDUCED CRYSTALLIZATION IN SEMICONDUCTOR DEVICES 审中-公开
    金属接触诱导结晶在半导体器件中的应用

    公开(公告)号:WO0017918A9

    公开(公告)日:2000-08-10

    申请号:PCT/US9921649

    申请日:1999-09-21

    CPC classification number: H01L21/2022 H01L21/2026

    Abstract: The method of the invention induces crystallization in an amorphous semiconductor layer (16), and includes the steps of: a) producing a patterned metal layer (18) on a first substrate (17), the metal layer (18) exhibiting a weak level of adherence to the first substrate; b) pressing the metal layer (18) into physical contact with the amorphous semiconductor layer (16); c) applying heat, light or both to the metal layer (18) and amorphous semiconductor layer (16) to cause a reaction therebetween and a crystallization of the amorphous semiconductor that is juxtaposed to the metal.

    Abstract translation: 本发明的方法在非晶半导体层(16)中诱导结晶,并且包括以下步骤:a)在第一衬底(17)上制造图案化的金属层(18),金属层(18)呈现弱的水平 粘附到第一基底上; b)将金属层(18)压入与非晶半导体层(16)物理接触; c)向金属层(18)和非晶半导体层(16)施加热,光或两者以引起其间的反应和与金属并置的非晶半导体的结晶。

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