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1.发明申请ELECTRONIC AND OPTO-ELECTRONIC DEVICES FABRICATED FROM NANOSTRUCTURED HIGH SURFACE TO VOLUME RATIO THIN FILMS 审中-公开从纳米结构高表面制成的电子和光电子器件，以体积比例薄膜
公开(公告)号：WO02101352A2
公开(公告)日：2002-12-19
申请号：PCT/US0217909
申请日：2002-06-06
Applicant: PENN STATE RES FOUND
Inventor： KALKAN KAAN A , FONASH STEPHEN J
CPC classification number: H01L51/4213 , H01L51/0038 , H01L51/4266 , Y02E10/549 , Y02P70/521
Abstract: An electronic opto-electronic device or a chemical sensor comprising: an interpenetrating network of a nanostructured high surface area to volume ratio film material and an organic/inorganic material forming a nanocomposite. The high surface area to volume film material is obtained onto an electrode substrate first, such that the nano-scale basic elements comprising this film material are embedded in a void matrix while having electrical connectivity with the elctrode substrate. For example, the film material may comprise an array of nano-protrusions electrically connected to the electrode substrate and separated by a void matrix. The interpenetrating network is formed by introducing an appropriate organic/inorganic material into the void volume of the high surface area to vlume film material. Further electrode(s) are defined onto the film or intra-void material to achieve a certain device. Charge separation, charge injection, charge storage, field effect devices, ohmic contacts, and chemical sensors are possible.
Abstract translation: 一种电子光电器件或化学传感器，包括：纳米结构的高表面积与体积比的薄膜材料的互穿网络和形成纳米复合材料的有机/无机材料。 首先在电极基板上获得高表面积体积膜材料，使得包含该膜材料的纳米级碱性元素嵌入空隙矩阵中，同时与电极基底具有电连接性。 例如，膜材料可以包括电连接到电极基底并由空隙矩阵分开的纳米突起阵列。 通过将适当的有机/无机材料引入高表面积的空隙体积中来形成互穿网络以形成薄膜材料。 另外的电极被限定在膜或孔内材料上以实现某种器件。 电荷分离，电荷注入，电荷存储，场效应器件，欧姆接触和化学传感器是可能的。
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2.发明申请ELECTRONIC AND OPTO-ELECTRONIC DEVICES FABRICATED FROM NANOSTRUCTURED HIGH SURFACE TO VOLUME RATIO THIN FILMS 审中-公开从纳米结构高表面制成的电子和光电子器件，以体积比例薄膜
公开(公告)号：WO02101352A8
公开(公告)日：2003-08-14
申请号：PCT/US0217909
申请日：2002-06-06
Applicant: PENN STATE RES FOUND
Inventor： KALKAN KAAN A , FONASH STEPHEN J
CPC classification number: H01L51/4213 , H01L51/0038 , H01L51/4266 , Y02E10/549 , Y02P70/521
Abstract: An electronic opto-electronic device or a chemical sensor comprising: an interpenetrating network of a nanostructured high surface area to volume ratio film material and an organic/inorganic material forming a nanocomposite. The high surface area to volume film material is obtained onto an electrode substrate first, such that the nano-scale basic elements comprising this film material are embedded in a void matrix while having electrical connectivity with the elctrode substrate. For example, the film material may comprise an array of nano-protrusions electrically connected to the electrode substrate and separated by a void matrix. The interpenetrating network is formed by introducing an appropriate organic/inorganic material into the void volume of the high surface area to vlume film material. Further electrode(s) are defined onto the film or intra-void material to achieve a certain device. Charge separation, charge injection, charge storage, field effect devices, ohmic contacts, and chemical sensors are possible.
Abstract translation: 一种电子光电器件或化学传感器，包括：纳米结构的高表面积与体积比的薄膜材料的互穿网络和形成纳米复合材料的有机/无机材料。 首先在电极基板上获得高表面积体积膜材料，使得包含该膜材料的纳米级碱性元素嵌入空隙矩阵中，同时与电极基底具有电连接性。 例如，膜材料可以包括电连接到电极基底并由空隙矩阵分开的纳米突起阵列。 通过将适当的有机/无机材料引入高表面积的空隙体积中来形成互穿网络以形成薄膜材料。 另外的电极被限定在膜或孔内材料上以实现某种器件。 电荷分离，电荷注入，电荷存储，场效应器件，欧姆接触和化学传感器是可能的。
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公开(公告)号：AU2002324437A1
公开(公告)日：2002-12-23
申请号：AU2002324437
申请日：2002-06-06
Applicant: PENN STATE RES FOUND
Inventor： KALKAN KAAN A , FONASH STEPHEN J
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