公开(公告)号：DE50213828D1

公开(公告)日：2009-10-22

申请号：DE50213828

申请日：2002-03-14

Applicant: PHILIPS INTELLECTUAL PROPERTY ,  FRAUNHOFER GES FORSCHUNG ,  KONINKL PHILIPS ELECTRONICS NV

Inventor： LAUTER JOSEF ,  KEMNA ARMIN ,  BROCKHERDE WERNER ,  HAUSSCHILD RALF DR

IPC: H01L27/14 ,  H01L31/0352 ,  H01L27/146 ,  H01L31/09 ,  H01L31/103

公开(公告)号：DE602005019622D1

公开(公告)日：2010-04-08

申请号：DE602005019622

申请日：2005-12-19

Applicant: PHILIPS INTELLECTUAL PROPERTY

Inventor： STEADMAN ROGER ,  VOGTMEIER GEREON ,  HEHEMANN INGO ,  IBNOU QUOSSAI S E ,  OEZKAN EROL ,  KEMNA ARMIN

IPC: G01N23/04 ,  G01T1/24 ,  H04N5/32

Abstract: The present invention provides a radiation sensor featuring a plurality of individual sensor elements, e.g. pixels, each of which having a radiation detection portion that is adapted to generate an electric current in response to impingement of electromagnetic radiation and a current amplifier for amplifying the photoelectric current generated by the radiation detection portion. Current amplification is therefore performed locally within each pixel of the radiation sensor itself. This local current amplification effectively allows to increase sensitivity and response of the radiation sensor and therefore enables implementation of the radiation sensor on the basis of CMOS technology. By means of the current amplification, the radiation sensor can be adapted for read-out by means of read-out devices and signal processing modules featuring distinct input specifications Further, a bias current required by the pixel implemented current amplifier is reproduced within each pixel and coupled to consecutive or adjacently arranged sensor elements or pixel, thereby providing a cascaded bias current regeneration and bias current distribution scheme.