3.
    发明专利
    未知

    公开(公告)号:DE50201546D1

    公开(公告)日:2004-12-23

    申请号:DE50201546

    申请日:2002-06-13

    Abstract: Low pressure gas discharge lamp comprises a gas discharge vessel containing a gas filling of a group IV chalcogenide and a buffer gas; inner (2) and outer electrodes; and devices for producing and maintaining a low pressure gas discharge. Preferred Features: The chalcogenide is a sulfide, selenide or telluride. The group IV element is silicon, germanium, tin or lead. The chalcogenide is especially silicon sulfide, germanium sulfide, germanium selenide, germanium telluride, tin sulfide, tin selenide or tin telluride. The gas discharge vessel has a luminescent coating (4) on its external surface or on its internal surface.

    4.
    发明专利
    未知

    公开(公告)号:DE10254969A1

    公开(公告)日:2004-06-03

    申请号:DE10254969

    申请日:2002-11-26

    Abstract: The invention relates to a high-pressure discharge lamp with a discharge vessel having a filling comprising a rare gas, for example argon, mercury, and chlorine, wherein the filling quantities of mercury [Hg] and chlorine [Cl] comply with the following conditions: [Hg].[Cl]>=200 (mumole/cm 3 ) 2 , [Cl] 3 . The condition [Hg].[Cl]>=200 (mumole/cm 3 ) 2 achieves HgCl vapor pressures in the discharge sufficient for generating significant radiation components of the B 2 Sigma + -X 2 Sigma + band system of this molecule. The condition [Cl] 3 serves to limit the chemical aggressiveness of the chlorine filling, in particular to limit the attacks on the wall and electrodes and thus to achieve longer lamp lives. The addition of chlorine-binding metals, in particular of germanium, leads to a further improvement in the radiation and life properties of the lamp.

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