公开(公告)号：AU2003297714A1

公开(公告)日：2004-06-30

申请号：AU2003297714

申请日：2003-12-09

Applicant: PIXELLIGENT TECHNOLOGIES LLC ,  FLEET ERIN F ,  GONEN SERPIL ,  COOPER GREGORY D

Inventor： FLEET ERIN F ,  GONEN SERPIL ,  COOPER GREGORY D ,  CHEN ZHIYUN

IPC: G02F1/01 ,  G02F1/015 ,  G02F1/017 ,  G02F1/03 ,  G03F7/00 ,  G03F7/20 ,  H01L20060101

公开(公告)号：WO2004053938A3

公开(公告)日：2005-04-28

申请号：PCT/US0338894

申请日：2003-12-09

Applicant: PIXELLIGENT TECHNOLOGIES LLC ,  CHEN ZHIYUN ,  FLEET ERIN F ,  GONEN SERPIL ,  COOPER GREGORY D

Inventor： CHEN ZHIYUN ,  FLEET ERIN F ,  GONEN SERPIL ,  COOPER GREGORY D

IPC: G02F1/01 ,  G02F1/015 ,  G02F1/017 ,  G02F1/03 ,  G03F7/00 ,  G03F7/20 ,  H01L20060101

CPC classification number: G03F7/70383 ,  B82Y20/00 ,  G02F1/0126 ,  G02F1/015 ,  G02F1/01716 ,  G02F2202/36 ,  G02F2203/12 ,  G03F7/70291 ,  Y10S430/146 ,  Y10S977/932 ,  Y10T428/24802 ,  Y10T428/24893

Abstract: Semiconductor nano-particles, due to their specific physical properties, can be used as optical modulator and reversible photo-bleachable materials for a wide spectrum, from far infrared to deep U.V. In this patent, nano-particles are provided with control circuitry to form a programmable mask. The optical characteristics of the nano-particles change to provide patterned light. Such patterned light can be used for example to expose a photoresist on a semiconductor wafer for photolithography. Other applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.

Abstract translation: 半导体纳米颗粒由于其特定的物理特性，可用作光谱调制器和可逆光可漂白材料，用于广谱，从远红外到深紫外。 在该专利中，纳米颗粒设置有控制电路以形成可编程掩模。 纳米颗粒的光学特性改变以提供图案化的光。 这种图案化的光可以用于例如在半导体晶片上曝光用于光刻的光致抗蚀剂。 其他应用包括光学光刻中的可逆对比度增强层（R-CEL），光刻掩模检查和写入以及光存储技术。

公开(公告)号：WO2005029180A3

公开(公告)日：2006-02-02

申请号：PCT/US2004006443

申请日：2004-03-04

Applicant: PIXELLIGENT TECHNOLOGIES LLC ,  CHEN ZHIYUN ,  FLEET ERIN F ,  COOPER GREGORY

Inventor： CHEN ZHIYUN ,  FLEET ERIN F ,  COOPER GREGORY

IPC: G03F20060101 ,  G03F1/00 ,  H01L21/027 ,  G03F7/00 ,  G03F7/04 ,  G03F7/26 ,  G03F9/00

CPC classification number: G03F7/2041 ,  B82Y30/00 ,  G03F1/62 ,  G03F7/004 ,  G03F7/091 ,  G03F7/2002

Abstract: Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing mateirals as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.

Abstract translation: 半导体纳米尺寸颗粒具有独特的光学性质，使其成为UV光刻技术中各种应用的理想选择。 在该专利中，描述了包括使用半导体纳米尺寸颗粒或半导体纳米尺寸颗粒在浸没式光刻中作为高折射介质的半导体纳米尺寸颗粒，作为光学中的抗反射涂层，光刻中的防护薄膜和UV光致抗蚀剂中的敏化剂 。

公开(公告)号：EP1576419A4

公开(公告)日：2006-07-12

申请号：EP03796779

申请日：2003-12-09

Applicant: PIXELLIGENT TECHNOLOGIES LLC ,  FLEET ERIN F ,  GONEN SERPIL ,  COOPER GREGORY D

Inventor： CHEN ZHIYUN ,  FLEET ERIN F ,  GONEN SERPIL ,  COOPER GREGORY D

IPC: G02F1/01 ,  G02F1/015 ,  G02F1/017 ,  G02F1/03 ,  G03F7/00 ,  G03F7/20 ,  H01L20060101 ,  G02F1/00

CPC classification number: G03F7/70383 ,  B82Y20/00 ,  G02F1/0126 ,  G02F1/015 ,  G02F1/01716 ,  G02F2202/36 ,  G02F2203/12 ,  G03F7/70291 ,  Y10S430/146 ,  Y10S977/932 ,  Y10T428/24802 ,  Y10T428/24893

Abstract: Semiconductor nano-particles, due to their specific physical properties, can be used as optical modulator and reversible photo-bleachable materials for a wide spectrum, from far infrared to deep U.V. In this patent, nano-particles are provided with control circuitry to form a programmable mask. The optical characteristics of the nano-particles change to provide patterned light. Such patterned light can be used for example to expose a photoresist on a semiconductor wafer for photolithography. Other applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.

Abstract translation: 半导体纳米粒子，由于其特定的物理性质，可以用作可逆光漂白的材料的宽光谱，从远红外到远紫外线。 应用包括在光学光刻可逆反差增强层（R-CEL），光刻掩模检查和写入和光存储技术。

公开(公告)号：EP1606670A4

公开(公告)日：2009-08-05

申请号：EP04809308

申请日：2004-03-04

Applicant: PIXELLIGENT TECHNOLOGIES LLC

Inventor： CHEN ZHIYUN ,  FLEET ERIN F ,  COOPER GREGORY

IPC: G03F7/20 ,  G03F20060101 ,  G03F1/00 ,  G03F1/14 ,  G03F7/004 ,  G03F7/09 ,  H01L21/027

CPC classification number: G03F7/2041 ,  B82Y30/00 ,  G03F1/62 ,  G03F7/004 ,  G03F7/091 ,  G03F7/2002

Abstract: Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing mateirals as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.