公开(公告)号：US20160230266A1

公开(公告)日：2016-08-11

申请号：US15025312

申请日：2014-09-26

Applicant: PLANSEE SE

Inventor： CHRISTIAN LINKE ,  THOMAS SCHERER

IPC: C23C14/34 ,  H01J37/34 ,  C22C28/00 ,  C22C9/00 ,  B22F5/00 ,  C22C1/04 ,  B22F3/105 ,  B22F3/14 ,  B22F3/115 ,  B22F9/04 ,  C23C14/14 ,  B22F1/00

CPC classification number: C23C14/3414 ,  B22F1/0003 ,  B22F3/105 ,  B22F3/115 ,  B22F3/14 ,  B22F5/00 ,  B22F9/04 ,  B22F2301/05 ,  B22F2301/10 ,  C22C1/0425 ,  C22C1/0441 ,  C22C1/0483 ,  C22C9/00 ,  C22C28/00 ,  C23C14/14 ,  H01J37/3423 ,  H01J37/3429

Abstract: A Ga-containing and Cu-containing sputtering target has a Ga content of from 30 to 68 at %. The sputtering target contains only CuGa2 as Ga-containing and Cu-containing intermetallic phase or the proportion by volume of CuGa2 is greater than the proportion by volume of Cu9Ga4. The sputtering target is advantageously produced by spark plasma sintering or cold gas spraying. Compared to Cu9Ga4, CuGa2 is very soft, which aids the production of defect-free sputtering targets having homogeneous sputtering behavior.

Abstract translation: 含Ga和Cu的溅射靶的Ga含量为30〜68原子％。 溅射靶仅含有CuGa 2作为含Ga和Cu的金属间化合物相或CuGa 2的体积比例大于Cu9Ga4的体积比例。 溅射靶有利地通过放电等离子体烧结或冷气喷涂来制造。 与Cu9Ga4相比，CuGa2非常柔软，有助于生产具有均匀溅射行为的无缺陷溅射靶。

公开(公告)号：US20210246544A1

公开(公告)日：2021-08-12

申请号：US17235003

申请日：2021-04-20

Applicant: PLANSEE SE

Inventor： CHRISTIAN LINKE ,  THOMAS SCHERER

IPC: C23C14/34 ,  B22F3/10 ,  C22C1/04 ,  G02F1/1524 ,  B22F3/16 ,  B22F3/17 ,  C22C19/03 ,  C22C27/04 ,  C22F1/10 ,  C22F1/18 ,  C23C14/14 ,  H01J37/34

Abstract: A process for producing a W—Ni sputtering target includes providing the sputtering target with 45 to 75 wt % W and a remainder of Ni and common impurities. The sputtering target contains a Ni(W) phase, a W phase and no or less than 10% by area on average of intermetallic phases measured at a target material cross section.

公开(公告)号：US20180144913A1

公开(公告)日：2018-05-24

申请号：US15571600

申请日：2016-04-28

Applicant: PLANSEE SE

Inventor： ANDRE DRONHOFER ,  CHRISTIAN LINKE ,  ELISABETH EIDENBERGER

IPC: H01J37/34

CPC classification number: H01J37/3435 ,  H01J37/3408 ,  H01J37/3429 ,  H01J37/3488

Abstract: A target for a cathode sputtering system has a tubular target body made of a sputtering material and at least one connector piece, which is connected to the target body and projects from the target body, for attaching the target body to the cathode sputtering system. The target body is connected to the at least one connector piece in a vacuum-tight manner and the two are rotationally fixed relative to one another. At least one damper element is provided between the at least one connector piece and the target body.

公开(公告)号：US20170029934A1

公开(公告)日：2017-02-02

申请号：US15106393

申请日：2014-12-17

Applicant: PLANSEE SE

Inventor： CHRISTIAN LINKE ,  THOMAS SCHERER

IPC: C23C14/34 ,  C22C27/04 ,  C22C19/03 ,  B22F3/10 ,  C22F1/10 ,  H01J37/34 ,  B22F3/16 ,  B22F3/17 ,  C23C14/14 ,  C22F1/18

Abstract: A sputtering target contains 45 to 75 wt % W and a remainder of Ni and common impurities. The sputtering target contains a Ni(W) phase, a W phase and no or less than 10% intermetallic phases. A process for producing a W—Ni sputtering target and a process of using the sputtering target are also provided.

Abstract translation: 溅射靶含有45〜75重量％的W，剩余的Ni和常见的杂质。 溅射靶包含Ni（W）相，W相和不少于或少于10％的金属间相。 还提供了制造W-Ni溅射靶的方法和使用溅射靶的工艺。

公开(公告)号：US20150354055A1

公开(公告)日：2015-12-10

申请号：US14764007

申请日：2014-01-29

Applicant: PLANSEE SE

Inventor： CHRISTIAN LINKE ,  JIEHUA LI ,  PETER SCHUMACHER ,  WOLFRAM KNABL ,  GERHARD LEICHTFRIED

IPC: C23C14/34 ,  B22F3/12 ,  B22F9/08 ,  H01L31/18 ,  B22F1/00 ,  C22C30/02 ,  C22C24/00 ,  H01J37/34 ,  B22F3/02 ,  B22F9/04

CPC classification number: C23C14/3414 ,  B22F1/00 ,  B22F3/02 ,  B22F3/12 ,  B22F3/15 ,  B22F9/04 ,  B22F9/082 ,  B22F2003/1051 ,  B22F2998/10 ,  C22C1/0425 ,  C22C1/0491 ,  C22C9/00 ,  C22C24/00 ,  C22C28/00 ,  C22C30/02 ,  H01J37/3426 ,  H01L31/18 ,  B22F3/10 ,  B22F3/20 ,  B22F3/18 ,  B22F3/17

Abstract: A sputtering target is composed of an alloy consisting of 5 to 70 at % of at least one element from the group of (Ga, In) and 0.1 to 15 at % of Na, the remainder being Cu and typical impurities. The sputtering target includes at least one intermetallic Na-containing phase.

Abstract translation: 溅射靶由5〜70at％的由（Ga，In）组成的至少一种元素和0.1〜15at％的Na组成的合金构成，余量为Cu和典型的杂质。 溅射靶包括至少一种金属间含Na的相。

公开(公告)号：TR201908123T4

公开(公告)日：2019-06-21

申请号：TR201908123

申请日：2014-12-17

Applicant: PLANSEE SE

Inventor： CHRISTIAN LINKE ,  THOMAS SCHERER

IPC: B22F3/10 ,  C22C1/04 ,  C22C19/03 ,  C22C27/04 ,  C22F1/10 ,  C22F1/18 ,  C23C14/34 ,  G02F1/15 ,  H01J37/34

Abstract: Buluş, W-Ni püskürtme hedefinin üretilmesine yönelik yöntem ve bunun kullanılması ile ilgilidir. Buluş ayrıca Ni (W) fazı, W fazı ayrıca entermetalik fazları olmayan veya %10'un altında olan %45 ila 75 arasında W, kalanı Ni olan ayrıca bilinen kirleri içeren püskürtme hedefi ile ilgilidir.