公开(公告)号：US20170260622A1

公开(公告)日：2017-09-14

申请号：US15504997

申请日：2015-08-10

Applicant: PLANSEE SE

Inventor： HARALD KOESTENBAUER ,  JUDITH KOESTENBAUER ,  GERHARD LEICHTFRIED ,  JOERG WINKLER ,  MOO SUNG HWANG ,  MARTIN KATHREIN ,  ELISABETH EIDENBERGER

IPC: C23C14/34 ,  C22C27/04 ,  H01B1/02 ,  C22C1/04

CPC classification number: C23C14/3414 ,  C22C1/045 ,  C22C27/04 ,  C23C24/04 ,  H01B1/023 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252

Abstract: A metallization for a thin-film component includes at least one layer composed of an Mo-based alloy containing Al and Ti and usual impurities. A process for producing a metallization includes providing at least one sputtering target, depositing at least one layer of an Mo-based alloy containing Al and Ti and usual impurities, and structuring the metallization by using at least one photolithographic process and at least one subsequent etching step. A sputtering target is composed of an Mo-based alloy containing Al and Ti and usual impurities. A process for producing a sputtering target composed of an Mo-based alloy includes providing a powder mixture containing Mo and also Al and Ti and cold gas spraying (CGS) of the powder mixture onto a suitable support material.

公开(公告)号：US20190221408A1

公开(公告)日：2019-07-18

申请号：US16337118

申请日：2017-09-08

Applicant: PLANSEE SE

Inventor： MICHAEL EIDENBERGER-SCHOBER ,  JOERG WINKLER ,  MICHAEL O'SULLIVAN

IPC: H01J37/34 ,  C22C27/04 ,  B22F3/15 ,  B22F3/24 ,  C23C14/34

CPC classification number: H01J37/3426 ,  B22F3/15 ,  B22F3/24 ,  B22F2003/185 ,  B22F2003/248 ,  B22F2201/01 ,  B22F2301/20 ,  B22F2998/10 ,  C22C1/045 ,  C22C27/04 ,  C23C14/14 ,  C23C14/3414 ,  H01J37/3491 ,  B22F5/00

Abstract: A sputtering target containing molybdenum and at least one metal from the group tantalum and niobium. The average content of tantalum and/or niobium is from 5 to 15 at % and the molybdenum content is greater than or equal to 80 at %. The sputtering target has at least a matrix with an average molybdenum content of greater than or equal to 92 at % and particles which are composed of a solid solution containing at least one metal from the group of tantalum and niobium, and molybdenum, with an average molybdenum content of greater than or equal to 15 at % and are embedded in the matrix. There is also described a method of producing a sputtering target.

公开(公告)号：US20160254128A1

公开(公告)日：2016-09-01

申请号：US15033427

申请日：2014-10-27

Applicant: PLANSEE SE

Inventor： NIKOLAUS REINFRIED ,  MICHAEL SCHOBER ,  WOLFRAM KNABL ,  JOERG WINKLER

IPC: H01J37/34 ,  C23C14/14 ,  C23C14/34 ,  B22F3/20 ,  B22F3/16 ,  B22F3/17 ,  B22F3/18 ,  C22C27/04 ,  B22F1/00

CPC classification number: H01J37/3429 ,  B22F1/0003 ,  B22F3/16 ,  B22F3/17 ,  B22F3/18 ,  B22F3/20 ,  B22F2201/01 ,  B22F2201/10 ,  B22F2201/20 ,  B22F2301/20 ,  C22C27/04 ,  C23C14/14 ,  C23C14/3414 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3491

Abstract: A sputtering target is composed of an Mo alloy containing at least one metal of group 5 of the Periodic Table, where the average content of group 5 metal is from 5 to 15 at % and the Mo content is ≧80 at %. The sputtering target has an average C/O ratio in (at %/at %) of ≧1. The sputtering targets can be produced by shaping or forming and have an improved sputtering behavior.

Abstract translation: 溅射靶由含有周期表第5族金属的至少一种金属的Mo合金构成，其中第5族金属的平均含量为5〜15原子％，Mo含量为≥80原子％。 溅射靶的平均C / O比（at％/ at％）为≥1。 溅射靶可以通过成形或成型制造并具有改进的溅射行为。