公开(公告)号：US20160254128A1

公开(公告)日：2016-09-01

申请号：US15033427

申请日：2014-10-27

Applicant: PLANSEE SE

Inventor： NIKOLAUS REINFRIED ,  MICHAEL SCHOBER ,  WOLFRAM KNABL ,  JOERG WINKLER

IPC: H01J37/34 ,  C23C14/14 ,  C23C14/34 ,  B22F3/20 ,  B22F3/16 ,  B22F3/17 ,  B22F3/18 ,  C22C27/04 ,  B22F1/00

CPC classification number: H01J37/3429 ,  B22F1/0003 ,  B22F3/16 ,  B22F3/17 ,  B22F3/18 ,  B22F3/20 ,  B22F2201/01 ,  B22F2201/10 ,  B22F2201/20 ,  B22F2301/20 ,  C22C27/04 ,  C23C14/14 ,  C23C14/3414 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3491

Abstract: A sputtering target is composed of an Mo alloy containing at least one metal of group 5 of the Periodic Table, where the average content of group 5 metal is from 5 to 15 at % and the Mo content is ≧80 at %. The sputtering target has an average C/O ratio in (at %/at %) of ≧1. The sputtering targets can be produced by shaping or forming and have an improved sputtering behavior.

Abstract translation: 溅射靶由含有周期表第5族金属的至少一种金属的Mo合金构成，其中第5族金属的平均含量为5〜15原子％，Mo含量为≥80原子％。 溅射靶的平均C / O比（at％/ at％）为≥1。 溅射靶可以通过成形或成型制造并具有改进的溅射行为。