MACHINE LEARNING-BASED SEMICONDUCTOR PROCESS OPTIMIZATION METHOD AND SYSTEM

    公开(公告)号:US20250139345A1

    公开(公告)日:2025-05-01

    申请号:US18814380

    申请日:2024-08-23

    Abstract: A machine-learning method for semiconductor process optimization may include inputting semiconductor-related parameters into each of first neural network models and outputting, based on the semiconductor-related parameters, a predicted figure of merit of a semiconductor device as a first output value from each of the first neural network models. After a semiconductor manufacturing process is performed with a semiconductor manufacturing parameter, electrical measurement parameter values may be measured using one or more measuring devices. The semiconductor-related parameters may include electrical measurement parameter values measured on one or more semiconductor devices. The method may also utilize a feedback loop between an output and an input of the first neural network models so that the electrical measurement parameter values can be updated based on an output value of the first neural network models. A second neural network model may also be used. A computing device and a system are also disclosed.

    APPARATUS AND METHOD FOR SETTING SEMICONDUCTOR PARAMETER

    公开(公告)号:US20230274985A1

    公开(公告)日:2023-08-31

    申请号:US17983319

    申请日:2022-11-08

    CPC classification number: H01L22/14 G06N3/08 H01L22/12 H01L22/20

    Abstract: Disclosed are a method and apparatus for setting a semiconductor parameter. The method for setting a semiconductor parameter according to an embodiment of the present disclosure is a method performed on a computing apparatus including one or more processors and a memory storing one or more programs executed by the one or more processors, the method including acquiring electrical measurement parameters corresponding to preset semiconductor manufacturing parameters, classifying the electrical measurement parameters into a plurality of groups according to a degree of correlation, extracting a correlation axis reflecting a correlation between electrical measurement parameters belonging to a corresponding group for each classified group, and predicting a figure of merit of a semiconductor device by using data values of electrical measurement parameters belonging to the corresponding group as input based on the correlation axis of each group.

Patent Agency Ranking