公开(公告)号：SG11201402744QA

公开(公告)日：2014-09-26

申请号：SG11201402744Q

申请日：2012-12-13

Applicant: PRAXAIR TECHNOLOGY INC

Inventor： CAMPEAU SERGE ,  HEIDERMAN DOUGLAS CHARLES ,  SINHA ASHWINI

IPC: F16K17/28 ,  F16K17/30

公开(公告)号：SG10201610531SA

公开(公告)日：2017-01-27

申请号：SG10201610531S

申请日：2013-06-14

Applicant: PRAXAIR TECHNOLOGY INC

Inventor： SPOHN RONALD F ,  SINHA ASHWINI ,  RICHENBERG CARL B

公开(公告)号：SG10201507319XA

公开(公告)日：2015-10-29

申请号：SG10201507319X

申请日：2011-09-12

Applicant: PRAXAIR TECHNOLOGY INC

Inventor： SINHA ASHWINI ,  BROWN LIOYD A

公开(公告)号：SG10202010058QA

公开(公告)日：2020-11-27

申请号：SG10202010058Q

申请日：2017-04-11

Applicant: PRAXAIR TECHNOLOGY INC

Inventor： REINICKER AARON ,  SINHA ASHWINI

Abstract: The present invention relates to an improved method for increasing a beam current as part of an ion implantation process. The method comprises introducing a dopant source and an assistant species into an ion implanter. A plasma of ions is formed and then extracted from the ion implanter. Non-carbon target ionic species are separated to produce a beam current that is higher in comparison to that generated solely from the dopant source.

公开(公告)号：SG10201807428PA

公开(公告)日：2018-09-27

申请号：SG10201807428P

申请日：2015-03-03

Applicant: PRAXAIR TECHNOLOGY INC

Inventor： SINHA ASHWINI ,  SMITH STANLEY ,  HEIDERMAN DOUGLAS ,  CAMPEAU SERGE

Abstract: BORON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING BORON ION IMPLANTATION A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials. Fig.1

公开(公告)号：SG11201408075QA

公开(公告)日：2015-01-29

申请号：SG11201408075Q

申请日：2013-06-14

Applicant: PRAXAIR TECHNOLOGY INC

Inventor： SPOHN RONALD F ,  SINHA ASHWINI ,  RICHENBERG CARL B

IPC: C23C16/448 ,  C23C8/06 ,  F17C1/10

公开(公告)号：SG10201406244QA

公开(公告)日：2014-10-30

申请号：SG10201406244Q

申请日：2010-09-24

Applicant: PRAXAIR TECHNOLOGY INC

Inventor： SINHA ASHWINI ,  CAMPEAU SERGE MARIUS ,  BROWN LLOYD ANTHONY

公开(公告)号：SG11201808852YA

公开(公告)日：2018-11-29

申请号：SG11201808852Y

申请日：2017-04-11

Applicant: PRAXAIR TECHNOLOGY INC

Inventor： REINICKER AARON ,  SINHA ASHWINI

IPC: C23C14/48

Abstract: The present invention relates to an improved method for increasing a beam current as part of an ion implantation process. The method comprises introducing a dopant source and an assistant species into an ion implanter. A plasma of ions is formed and then extracted from the ion implanter. Non-carbon target ionic species are separated to produce a beam current that is higher in comparison to that generated solely from the dopant source.

公开(公告)号：SG188998A1

公开(公告)日：2013-05-31

申请号：SG2013019021

申请日：2011-09-12

Applicant: PRAXAIR TECHNOLOGY INC

Inventor： SINHA ASHWINI ,  BROWN LIOYD A

Abstract: This invention relates in part to a method for preventing or reducing the formation and/or accumulation of deposits in an ion source component of an ion implanter used in semiconductor and microelectronic manufacturing. The ion source component includes an ionization chamber and one or more components contained within the ionization chamber. The method involves introducing into the ionization chamber a dopant gas, wherein the dopant gas has a composition sufficient to prevent or reduce the formation of fluorine ions/radicals during ionization. The dopant gas is then ionized under conditions sufficient to prevent or reduce the formation and/or accumulation of deposits on the interior of the ionization chamber and/or on the one or more components contained within the ionization chamber. The deposits adversely impact the normal operation of the ion implanter causing frequent down time and reducing tool utilization.

公开(公告)号：SG10202007780YA

公开(公告)日：2020-09-29

申请号：SG10202007780Y

申请日：2016-12-22

Applicant: PRAXAIR TECHNOLOGY INC

Inventor： REINICKER AARON ,  SINHA ASHWINI ,  GUO QIONG

Abstract: A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A suitable tin-containing dopant source material is selected based on certain attributes. Some of these attributes include stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage.