公开(公告)号：WO2005035144A1

公开(公告)日：2005-04-21

申请号：PCT/US2003/028505

申请日：2003-09-09

Applicant: PTS CORPORATION

Inventor： STAPLE, Bevan ,  MILLER, David ,  MULLER, Lilac

IPC: B05D5/12

CPC classification number: B81C1/00476 ,  B81B2201/042 ,  B81C2201/117

Abstract: A method is provided for preventing dopant leaching from a doped structural film during fabrication of a microelectromechanical system. A microstructure that includes the doped structural film, sacrificial material, and metallic material is produced with a combination of deposition, patterning, and etching techniques. The sacrificial material is dissolved with a release solution that has a substance destructive to the sacrificial material. This substance also acts as an electrolyte, forming a galvanic cell with the doped structural film and metallic material acting as electrodes. The effects of the galvanic cell are suppressed by including a nonionic detergent mixed in the release solution.

Abstract translation: 提供了一种在微电子机械系统的制造期间防止掺杂的结构膜的掺杂剂浸出的方法。 包括掺杂的结构膜，牺牲材料和金属材料的微结构通过沉积，图案化和蚀刻技术的组合来生产。 牺牲材料用具有对牺牲材料具有破坏性的物质的释放溶液溶解。 该物质还用作电解质，形成具有掺杂结构膜和金属材料作为电极的原电池。 通过包括混合在脱模溶液中的非离子洗涤剂来抑制原电池的影响。