公开(公告)号：EP2120517B1

公开(公告)日：2018-08-01

申请号：EP07702270.5

申请日：2007-02-05

Applicant: Princo Corp.

Inventor： YANG, Chihkuang

IPC: H05K1/14 ,  H05K3/36 ,  H05K3/46 ,  H01L23/48 ,  H01L23/12 ,  H01L23/50

CPC classification number: H05K1/142 ,  H01L21/4857 ,  H01L23/5383 ,  H01L23/5385 ,  H01L24/19 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/19107 ,  H05K1/117 ,  H05K3/0052 ,  H05K3/361 ,  H05K3/4611 ,  H05K2201/058 ,  H05K2201/091 ,  H05K2201/09109 ,  H05K2201/0919 ,  H01L2924/00

Abstract: A hybrid structure of multi-layer substrates comprises a first multi-layer substrate and a second multi-layer substrate. The first multi-layer substrate stacks up first metal layers, first dielectric layers alternately and has VIAs. A border district of a first metal layer connects with a border district of the corresponding first dielectric layer. The border districts are separated from adjacent first metal layers and adjacent first dielectric layers. The second multi-layer substrate stacks up second metal layers and second dielectric layers alternately. A border district of a second metal layer connects with a border district of the corresponding second dielectric layer. The border districts are separated from adjacent second metal layers and adjacent second dielectric layers. The VIAs are located at the border districts of the first dielectric layers and each VIA has electric conductor therein to connect one first metal layer with one second metal layer.

公开(公告)号：EP2120521B1

公开(公告)日：2016-01-27

申请号：EP07702269.7

申请日：2007-02-05

Applicant: Princo Corp.

Inventor： YANG, Chihkuang

IPC: H05K3/36 ,  H05K1/14 ,  H05K3/46 ,  H01L23/48 ,  H01L23/12 ,  H01L23/50

CPC classification number: H05K1/117 ,  H01L21/4857 ,  H01L21/6835 ,  H01L23/5383 ,  H01L23/5385 ,  H01L24/16 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/15159 ,  H05K1/142 ,  H05K3/0052 ,  H05K3/361 ,  H05K3/4611 ,  H05K2201/058 ,  H05K2201/091 ,  H05K2201/09109 ,  H05K2201/0919 ,  H01L2224/05599

公开(公告)号：EP2120521A1

公开(公告)日：2009-11-18

申请号：EP07702269.7

申请日：2007-02-05

Applicant: Princo Corp.

Inventor： YANG, Chihkuang

IPC: H05K3/36 ,  H05K1/14 ,  H05K3/46 ,  H01L23/48 ,  H01L23/12 ,  H01L23/50

CPC classification number: H05K1/117 ,  H01L21/4857 ,  H01L21/6835 ,  H01L23/5383 ,  H01L23/5385 ,  H01L24/16 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/15159 ,  H05K1/142 ,  H05K3/0052 ,  H05K3/361 ,  H05K3/4611 ,  H05K2201/058 ,  H05K2201/091 ,  H05K2201/09109 ,  H05K2201/0919 ,  H01L2224/05599

Abstract: Disclosed is a method of manufacturing a hybrid structure of multi-layer substrates. The method comprises steps of: separating a border district of at least one metal layer connecting with a border district of the corresponding dielectric layer from adjacent metal layers and adjacent dielectric layers for each multi-layer substrate and connecting a separated border of a metal layer of one multi-layer substrate with a separated border district of a metal layer of another multi-layer substrate to form a connection section. The hybrid structure comprises at least a first multi-layer substrate and a second multi-layer substrate. At least one first metal layer is connected with at least one second metal layer to form a connection section.

Abstract translation: 公开了一种制造多层基板的混合结构的方法。 该方法包括以下步骤：分离至少一种金属层的与相邻的金属层和邻近的介电层的每个多层基板对应的介电层的边界区连接的边界区和连接的金属层的分离的边界 与另一种多层基板的金属层的分离边界区一个多层基片，以形成连接部。 所述混合结构包括至少一个第一多层基板和第二多层基板。 至少一个第一金属层与至少一个第二金属层连接以形成连接部。

公开(公告)号：EP2120517A1

公开(公告)日：2009-11-18

申请号：EP07702270.5

申请日：2007-02-05

Applicant: Princo Corp.

Inventor： YANG, Chihkuang

IPC: H05K1/14 ,  H05K3/36 ,  H05K3/46 ,  H01L23/48 ,  H01L23/12 ,  H01L23/50

CPC classification number: H05K1/142 ,  H01L21/4857 ,  H01L23/5383 ,  H01L23/5385 ,  H01L24/19 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/19107 ,  H05K1/117 ,  H05K3/0052 ,  H05K3/361 ,  H05K3/4611 ,  H05K2201/058 ,  H05K2201/091 ,  H05K2201/09109 ,  H05K2201/0919 ,  H01L2924/00

Abstract: A hybrid structure of multi-layer substrates comprises a first multi-layer substrate and a second multi-layer substrate. The first multi-layer substrate stacks up first metal layers, first dielectric layers alternately and has VIAs. A border district of a first metal layer connects with a border district of the corresponding first dielectric layer. The border districts are separated from adjacent first metal layers and adjacent first dielectric layers. The second multi-layer substrate stacks up second metal layers and second dielectric layers alternately. A border district of a second metal layer connects with a border district of the corresponding second dielectric layer. The border districts are separated from adjacent second metal layers and adjacent second dielectric layers. The VIAs are located at the border districts of the first dielectric layers and each VIA has electric conductor therein to connect one first metal layer with one second metal layer.

Abstract translation: 多层基板的混合结构包括第一多层基板和第二多层基板。 第一多层基板交替地堆叠第一金属层，第一介电层并具有VIA。 第一金属层的边界区域与相应的第一介电层的边界区域连接。 边界区域与相邻的第一金属层和相邻的第一介电层分离。 第二多层基板交替堆叠第二金属层和第二介质层。 第二金属层的边界区域与相应的第二电介质层的边界区域连接。 边界区域与相邻的第二金属层和相邻的第二介电层分离。 VIA位于第一电介质层的边界区域，并且每个VIA在其中具有导电体以将一个第一金属层与一个第二金属层连接。