Configurable mixer
    1.
    发明专利

    公开(公告)号:AU2017332549B2

    公开(公告)日:2022-06-09

    申请号:AU2017332549

    申请日:2017-08-14

    Applicant: QUALCOMM INC

    Abstract: A method and apparatus are disclosed for a configurable mixer capable of operating in a linear, a legacy, and a low-power mode. In the linear mode, the configurable mixer is configured to operate as a double-balanced mixer to multiply a first differential signal by a second differential signal. In the legacy mode, the configurable mixer is configured to as a double-balanced mixer to multiply a differential signal by a single-ended signal. In the low-power mode, the configurable mixer is configured to operate as a single-balanced mixer to multiply a differential signal by a single-ended signal. The operating mode of the configurable mixer may be based, at least in part, on a mode control signal. In some embodiments, the configurable mixer may be included in an analog front end of a wireless communication device.

    Configurable mixer
    2.
    发明专利

    公开(公告)号:AU2017332549A1

    公开(公告)日:2019-03-07

    申请号:AU2017332549

    申请日:2017-08-14

    Applicant: QUALCOMM INC

    Abstract: A method and apparatus are disclosed for a configurable mixer capable of operating in a linear, a legacy, and a low-power mode. In the linear mode, the configurable mixer is configured to operate as a double-balanced mixer to multiply a first differential signal by a second differential signal. In the legacy mode, the configurable mixer is configured to as a double-balanced mixer to multiply a differential signal by a single-ended signal. In the low-power mode, the configurable mixer is configured to operate as a single-balanced mixer to multiply a differential signal by a single-ended signal. The operating mode of the configurable mixer may be based, at least in part, on a mode control signal. In some embodiments, the configurable mixer may be included in an analog front end of a wireless communication device.

    STACKED METAL OXIDE SEMICONDUCTOR (MOS) AND METAL OXIDE METAL (MOM) CAPACITOR ARCHITECTURE
    3.
    发明申请
    STACKED METAL OXIDE SEMICONDUCTOR (MOS) AND METAL OXIDE METAL (MOM) CAPACITOR ARCHITECTURE 审中-公开
    堆叠金属氧化物半导体(MOS)和金属氧化物金属(MOM)电容器架构

    公开(公告)号:WO2015123250A3

    公开(公告)日:2015-10-29

    申请号:PCT/US2015015339

    申请日:2015-02-11

    Applicant: QUALCOMM INC

    Abstract: A device includes a first stacked capacitor (515) comprising a first MOS capacitance (512) and a first MOM capacitance (514), the first MOS capacitance coupled to a first node (513), the first node configured to receive a first bias voltage (Vb), and a second stacked capacitor (525) comprising a second MOS capacitance (522) and a second MOM capacitance (524), the second MOS capacitance coupled to the first node.

    Abstract translation: 一种器件包括包括第一MOS电容(512)和第一MOM电容(514)的第一堆叠电容器(515),所述第一MOS电容耦合到第一节点(513),所述第一节点被配置为接收第一偏置电压 (Vb)和包括第二MOS电容(522)和第二MOM电容(524)的第二堆叠电容器(525),所述第二MOS电容耦合到所述第一节点。

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