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公开(公告)号:WO2018031969A1
公开(公告)日:2018-02-15
申请号:PCT/US2017/046654
申请日:2017-08-12
Applicant: QUALCOMM INCORPORATED
Inventor: MERRIKH, Ali Akbar , MAHMOUDI, Farsheed , SAEIDI, Mehdi , FLEMING, Evan Bentley
Abstract: A semiconductor device may include a semiconductor die having an active region. The semiconductor device may also include a thermocouple mesh proximate to the active region. The thermocouple mesh may include a first set of wires of a first material extending in a first direction, and a second set of wires of a second material. The second material may be different from the first material. In addition, the second set of wires may extend in a second direction different than the first direction of the first wires.
Abstract translation: 半导体器件可以包括具有有源区的半导体管芯。 半导体器件还可以包括靠近有源区的热电偶网。 热电偶网可以包括沿第一方向延伸的第一材料的第一组线和第二材料的第二组线。 第二材料可以不同于第一材料。 另外,第二组导线可以在不同于第一导线的第一方向的第二方向上延伸。 p>
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公开(公告)号:EP3497417A1
公开(公告)日:2019-06-19
申请号:EP17757983.6
申请日:2017-08-12
Applicant: Qualcomm Incorporated
Inventor: MERRIKH, Ali Akbar , MAHMOUDI, Farsheed , SAEIDI, Mehdi , FLEMING, Evan Bentley
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