公开(公告)号：US20240280845A1

公开(公告)日：2024-08-22

申请号：US18542868

申请日：2023-12-18

Applicant: Quantum Transistors Technology Ltd.

Inventor： Moshe Tordjman ,  Alexander Sherman ,  Igal Bayn

IPC: G02F1/035

CPC classification number: G02F1/035 ,  G02F2201/346

Abstract: An optoelectronic device includes an optical waveguide disposed on a substrate. A pair of Bragg reflectors is formed in the optical waveguide to define a resonant cavity between the Bragg reflectors. A piezoelectric material is disposed on the substrate in proximity to the optical waveguide. Electrodes are configured to apply an electric field to the piezoelectric material so as to tune a wavelength of light emitted from the resonant cavity.