公开(公告)号：US20240280845A1

公开(公告)日：2024-08-22

申请号：US18542868

申请日：2023-12-18

Applicant: Quantum Transistors Technology Ltd.

Inventor： Moshe Tordjman ,  Alexander Sherman ,  Igal Bayn

IPC: G02F1/035

CPC classification number: G02F1/035 ,  G02F2201/346

Abstract: An optoelectronic device includes an optical waveguide disposed on a substrate. A pair of Bragg reflectors is formed in the optical waveguide to define a resonant cavity between the Bragg reflectors. A piezoelectric material is disposed on the substrate in proximity to the optical waveguide. Electrodes are configured to apply an electric field to the piezoelectric material so as to tune a wavelength of light emitted from the resonant cavity.

公开(公告)号：US20240393654A1

公开(公告)日：2024-11-28

申请号：US18324978

申请日：2023-05-28

Applicant: Quantum Transistors Technology Ltd.

Inventor： Igal Bayn ,  Moshe Tordjman

IPC: G02F1/225 ,  G02F1/21

Abstract: An optoelectronic device includes a substrate, an optical waveguide disposed on the substrate, a dielectric layer disposed over the optical waveguide on the substrate, and a membrane comprising an electro-optical material disposed over the dielectric layer and overlying at least a part of the optical waveguide. Electrodes are configured to apply an electric field to the electro-optical material in a vicinity of the optical waveguide, thereby modulating a phase of a guided optical wave propagating in the waveguide.

公开(公告)号：US20240319524A1

公开(公告)日：2024-09-26

申请号：US18542901

申请日：2023-12-18

Applicant: Quantum Transistors Technology Ltd.

Inventor： Moshe Tordjman ,  Igal Bayn

IPC: G02F1/03

CPC classification number: G02F1/0316 ,  G02F2202/06

Abstract: A quantum computing device includes a crystalline material comprising a crystal defect and one or more doped layers in the crystalline material over the crystal defect in proximity to the crystal defect. A surface carrier donor material is disposed on a surface of the crystalline material over the one or more doped layers in proximity to the crystal defect. An electrode is disposed over the surface carrier donor material in proximity to the crystal defect. Control circuitry is configured to apply a voltage to the electrode to control a state of the crystal defect.

公开(公告)号：US20240281690A1

公开(公告)日：2024-08-22

申请号：US18171351

申请日：2023-02-19

Applicant: Quantum Transistors Technology Ltd.

Inventor： Igal Bayn ,  Moshe Tordjman

IPC: G06N10/40 ,  G02B6/122 ,  H01L29/66

CPC classification number: G06N10/40 ,  G02B6/1228 ,  H01L29/66977 ,  G02B2006/12097 ,  G02B2006/12121

Abstract: A quantum computing device includes an optical resonator having a resonant wavelength band. A crystalline material including a crystal defect is contained within the optical resonator. The crystal defect has a ground state and an excited state, which has an emission wavelength in the resonant wavelength band. A source electrode and a drain electrode are disposed on opposing sides of the crystal defect and configured to apply a first electric field in the crystalline material along a longitudinal axis. A gate electrode is disposed in proximity to the crystal defect and configured to apply to the crystalline material a second electric field transverse to the longitudinal axis. Control circuitry is configured to apply a first voltage between the source and drain electrodes to control a charge state of the crystal defect and to apply a second voltage to the gate electrode to tune the emission wavelength.