公开(公告)号：WO1996029742A1

公开(公告)日：1996-09-26

申请号：PCT/US1996003128

申请日：1996-03-09

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： RADIANT TECHNOLOGIES, INC. ,  EVANS, Joseph, Tate, Jr. ,  WARREN, William, L. ,  TUTTLE, Bruce, A.

IPC: H01L29/78

CPC classification number: H01L29/516 ,  G11C11/223

Abstract: An improved ferroelectric FET structure (10) in which the ferroelectric layer (14) is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer (16) having first and second contacts (18, 19) thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode (12) and a ferroelectric layer (14) which is sandwiched between the semiconductor layer (16) and the bottom electrode (12). The ferroelectric layer (14) is constructed from a perovskite structure of the chemical composition ABO3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentration between 1 % and 8 %.

Abstract translation: 改进的铁电FET结构（10），其中掺杂铁电层（14）以减少保留损耗。 根据本发明的铁电FET包括其上具有第一和第二触点（18,19）的半导体层（16），第一和第二触点彼此分离。 铁电FET还包括夹在半导体层（16）和底部电极（12）之间的底部电极（12）和铁电体层（14）。 铁电层（14）由化学组成ABO 3的钙钛矿结构构成，其中B位置包含第一和第二元素以及具有大于+4的氧化态足够浓度的掺杂剂元素，以阻止在 第一次和第二次接触时间。 铁电FET结构优选在A位置包含Pb。 第一和第二元素分别优选为Zr和Ti。 优选的B位掺杂剂是浓度在1％和8％之间的铌，钽和钨。

公开(公告)号：EP0815596B1

公开(公告)日：2001-08-22

申请号：EP96908703.0

申请日：1996-03-09

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： EVANS, Joseph, Tate, Jr. ,  WARREN, William, L. ,  TUTTLE, Bruce, A.

IPC: H01L29/78 ,  H01L29/51

CPC classification number: H01L29/516 ,  G11C11/223

Abstract: An improved ferroelectric FET structure (10) in which the ferroelectric layer (14) is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer (16) having first and second contacts (18, 19) thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode (12) and a ferroelectric layer (14) which is sandwiched between the semiconductor layer (16) and the bottom electrode (12). The ferroelectric layer (14) is constructed from a perovskite structure of the chemical composition ABO3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentration between 1 % and 8 %.

公开(公告)号：EP0815596A1

公开(公告)日：1998-01-07

申请号：EP96908703.0

申请日：1996-03-09

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： EVANS, Joseph, Tate, Jr. ,  WARREN, William, L. ,  TUTTLE, Bruce, A.

IPC: H01L21 ,  H01L27 ,  H01L29

CPC classification number: H01L29/516 ,  G11C11/223

Abstract: An improved ferroelectric FET structure (10) in which the ferroelectric layer (14) is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer (16) having first and second contacts (18, 19) thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode (12) and a ferroelectric layer (14) which is sandwiched between the semiconductor layer (16) and the bottom electrode (12). The ferroelectric layer (14) is constructed from a perovskite structure of the chemical composition ABO3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentration between 1 % and 8 %.