公开(公告)号：US11851785B2

公开(公告)日：2023-12-26

申请号：US17326615

申请日：2021-05-21

Applicant: Raytheon Company

Inventor： Andrew Clarke ,  David R. Rhiger ,  George Grama ,  Stuart B. Farrell

IPC: H01L31/18 ,  C30B25/18 ,  C30B29/40 ,  C30B29/60

CPC classification number: C30B25/183 ,  C30B29/403 ,  C30B29/605 ,  H01L31/1832 ,  H01L31/1868

Abstract: An electrical device includes an aluminum nitride passivation layer for a mercury cadmium telluride (Hg1-xCdxTe) (MCT) semiconductor layer of the device. The AlN passivation layer may be an un-textured amorphous-to-polycrystalline film that is deposited onto the surface of the MCT in its as-grown state, or overlying the MCT after the MCT surface has been pre-treated or partially passivated, in this way fully passivating the MCT. The AlN passivation layer may have a coefficient of thermal expansion (CTE) that closely matches the CTE of the MCT layer, thereby reducing strain at an interface to the MCT. The AlN passivation layer may be formed with a neutral inherent (residual) stress, provide mechanical rigidity, and chemical resistance to protect the MCT.

公开(公告)号：US11710756B2

公开(公告)日：2023-07-25

申请号：US16952783

申请日：2020-11-19

Applicant: RAYTHEON COMPANY

Inventor： Jamal I. Mustafa ,  Robert C. Anderson ,  John L. Vampola ,  Sean P. Kilcoyne ,  Eric R. Miller ,  George Grama

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/1469 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1462

Abstract: A direct-bond hybridization (DBH) method is provided to assemble a sensor wafer device. The DBH method includes fabricating an optical element on a handle wafer and depositing first oxide with n-x thickness on the optical element where n is an expected final oxide thickness of the sensor wafer, depositing second oxide with x thickness onto a sensor wafer, executing layer transfer of the optical element by a DBH fusion bond technique to the sensor wafer whereby the first and second oxides form an oxide layer of n thickness between the optical element and the sensor wafer and removing the handle wafer.

公开(公告)号：US11705471B2

公开(公告)日：2023-07-18

申请号：US17079150

申请日：2020-10-23

Applicant: Raytheon Company

Inventor： Sean P. Kilcoyne ,  George Grama ,  Scott S. Miller

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L24/16 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L27/1469 ,  H01L27/14636 ,  H01L2224/08145 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16505 ,  H01L2224/32145 ,  H01L2224/80895 ,  H01L2224/83896 ,  H01L2224/9201 ,  H01L2224/92143 ,  H01L2224/92242

Abstract: A semiconductor-based imaging device and method of manufacture. A direct bond hybridization (DBH) structure is formed on a top surface of a read out integrated circuit (ROIC). A silicon-based detector is bonded to the ROIC via the DBH structure. A non-silicon-based detector is bonded to the DBH structure located on the top of the ROIC using indium-based hybridization.

公开(公告)号：US11410937B2

公开(公告)日：2022-08-09

申请号：US16998235

申请日：2020-08-20

Applicant: Raytheon Company

Inventor： Andrew P. Clarke ,  Michael J. Rondon ,  George Grama

IPC: H01L21/3205 ,  H01L25/18 ,  H01L23/00

Abstract: A semiconductor device includes a substrate with both a compressive layer and an aluminum nitride tensile layer overlying at least a portion of the substrate. The aluminum nitride tensile layer is configured to counteract the compressive layer stress in the device to thereby control an amount of substrate bow in the device. The device includes a temperature-sensitive material supported by the substrate, in which the temperature-sensitive material has a relatively low thermal degradation temperature. The aluminum nitride tensile layer is formed at a temperature below the thermal degradation temperature of the temperature-sensitive material.

公开(公告)号：US20220157881A1

公开(公告)日：2022-05-19

申请号：US16952783

申请日：2020-11-19

Applicant: RAYTHEON COMPANY

Inventor： Jamal I. Mustafa ,  Robert C. Anderson ,  John L. Vampola ,  Sean P. Kilcoyne ,  Eric R. Miller ,  George Grama

IPC: H01L27/146

Abstract: A direct-bond hybridization (DBH) method is provided to assemble a sensor wafer device. The DBH method includes fabricating an optical element on a handle wafer and depositing first oxide with n-x thickness on the optical element where n is an expected final oxide thickness of the sensor wafer, depositing second oxide with x thickness onto a sensor wafer, executing layer transfer of the optical element by a DBH fusion bond technique to the sensor wafer whereby the first and second oxides form an oxide layer of n thickness between the optical element and the sensor wafer and removing the handle wafer.

公开(公告)号：US20220130883A1

公开(公告)日：2022-04-28

申请号：US17079150

申请日：2020-10-23

Applicant: Raytheon Company

Inventor： Sean P. Kilcoyne ,  George Grama ,  Scott S. Miller

IPC: H01L27/146 ,  H01L23/00

Abstract: A semiconductor-based imaging device and method of manufacture. A direct bond hybridization (DBH) structure is formed on a top surface of a read out integrated circuit (ROIC). A silicon-based detector is bonded to the ROIC via the DBH structure. A non-silicon-based detector is bonded to the DBH structure located on the top of the ROIC using indium-based hybridization.

公开(公告)号：US11101130B2

公开(公告)日：2021-08-24

申请号：US16570408

申请日：2019-09-13

Applicant: Raytheon Company

Inventor： Andrew Clarke ,  Robert M. Emerson ,  George Grama ,  June-Marie Boll

IPC: H01L21/02 ,  H01L21/768

Abstract: A method of forming a pattern of metallic material on a substrate includes providing a plurality of void regions on a surface of the substrate. At a first temperature, a first layer of a first metallic material of a eutectic-forming pair of metallic materials is deposited on the substrate to form a conformal metallic film over the substrate and over the surfaces of the plurality of void regions. The substrate and conformal metallic film are warmed to a second temperature greater than a eutectic-liquid-formation temperature of the eutectic pair of metallic materials. At the second temperature, the second metallic material of the eutectic-forming pair of metallic materials is deposited on the conformal metallic film to initiate a eutectic-liquid-forming reaction, such that the plurality of void regions are filled with a mixture of the first and second metallic materials of the eutectic-forming pair of metallic materials.

公开(公告)号：US20200211846A1

公开(公告)日：2020-07-02

申请号：US16570408

申请日：2019-09-13

Applicant: Raytheon Company

Inventor： Andrew Clarke ,  Robert M. Emerson ,  George Grama ,  June-Marie Boll

IPC: H01L21/02

Abstract: A method of forming a pattern of metallic material on a substrate includes providing a plurality of void regions on a surface of the substrate. At a first temperature, a first layer of a first metallic material of a eutectic-forming pair of metallic materials is deposited on the substrate to form a conformal metallic film over the substrate and over the surfaces of the plurality of void regions. The substrate and conformal metallic film are warmed to a second temperature greater than a eutectic-liquid-formation temperature of the eutectic pair of metallic materials. At the second temperature, the second metallic material of the eutectic-forming pair of metallic materials is deposited on the conformal metallic film to initiate a eutectic-liquid-forming reaction, such that the plurality of void regions are filled with a mixture of the first and second metallic materials of the eutectic-forming pair of metallic materials.

公开(公告)号：US20220372651A1

公开(公告)日：2022-11-24

申请号：US17326615

申请日：2021-05-21

Applicant: Raytheon Company

Inventor： Andrew Clarke ,  David R. Rhiger ,  George Grama ,  Stuart B. Farrell

IPC: C30B25/18 ,  C30B29/60 ,  C30B29/40 ,  H01L31/18

Abstract: An electrical device includes an aluminum nitride passivation layer for a mercury cadmium telluride (Hg1-xCdxTe) (MCT) semiconductor layer of the device. The AlN passivation layer may be an un-textured amorphous-to-polycrystalline film that is deposited onto the surface of the MCT in its as-grown state, or overlying the MCT after the MCT surface has been pre-treated or partially passivated, in this way fully passivating the MCT. The AlN passivation layer may have a coefficient of thermal expansion (CTE) that closely matches the CTE of the MCT layer, thereby reducing strain at an interface to the MCT. The AlN passivation layer may be formed with a neutral inherent (residual) stress, provide mechanical rigidity, and chemical resistance to protect the MCT.

公开(公告)号：US11222813B2

公开(公告)日：2022-01-11

申请号：US16675992

申请日：2019-11-06

Applicant: Raytheon Company

Inventor： Sean P. Kilcoyne ,  Eric R. Miller ,  George Grama

IPC: H01L21/768 ,  H01L21/56 ,  H05K3/42 ,  C23C18/16 ,  H01L23/31 ,  H01L23/528 ,  C25D7/12 ,  H01L21/02 ,  H01L23/00

Abstract: A method of manufacturing a wafer assembly includes forming an array of planar wafer level metal posts extending from a surface of a substrate of a first wafer. After forming the array of posts, an oxide layer is applied over the surface of the first wafer and around the array of posts, the oxide layer being applied at a temperature of below 150 degrees Celsius.