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    SUPERLATTICE ELECTRO-OPTIC DEVICE INCLUDING RECONFIGURABLE OPTICAL ELEMENTS
    1.
    发明公开
    SUPERLATTICE ELECTRO-OPTIC DEVICE INCLUDING RECONFIGURABLE OPTICAL ELEMENTS 审中-公开

    公开(公告)号：US20230244096A1

    公开(公告)日：2023-08-03

    申请号：US18298097

    申请日：2023-04-10

    Applicant: Raytheon Company

    Inventor： Jamal I. Mustafa ,  Justin Gordon Adams Wehner ,  Christopher R. Koontz

    IPC: G02F1/017

    CPC classification number: G02F1/017 ,  G02F2203/11 ,  G02F2203/52

    Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.

    Multi-spectral super-pixel filters and methods of formation
    3.
    发明授权
    Multi-spectral super-pixel filters and methods of formation 有权

    公开(公告)号：US09630368B2

    公开(公告)日：2017-04-25

    申请号：US14050762

    申请日：2013-10-10

    Applicant: RAYTHEON COMPANY

    Inventor： Justin Gordon Adams Wehner

    IPC: B29D11/00 ,  G02B5/20 ,  G02B26/00

    CPC classification number: B29D11/00634 ,  G02B5/201 ,  G02B26/008

    Abstract: Multi-spectral filter elements and methods of formation are disclosed. Each multi-spectral filter element may include a plurality of sub-filters that are, in some examples, each adapted to respond to electromagnetic radiation within respective ones of a plurality of spectral bands. A method example includes forming an optical cavity layer. Volume of the optical cavity layer can be reduced in at least N−1 number of spatial regions. The reducing may include a number of selective removal steps equal to the binary logarithm function Log2 N. In this example, each spatial region corresponds to a respective one of the plurality sub-filters. The plurality of sub-filters includes at least N sub-filters. In particular examples, the respective ones of the plurality of spectral bands may be at least partially discrete with respect to each other.

    Two color detector leveraging resonant cavity enhancement for performance improvement
    4.
    发明授权
    Two color detector leveraging resonant cavity enhancement for performance improvement 有权
    两个颜色检测器利用谐振腔增强功能进行性能改进

    公开(公告)号：US09536917B2

    公开(公告)日：2017-01-03

    申请号：US14084276

    申请日：2013-11-19

    Applicant: RAYTHEON COMPANY

    Inventor： Justin Gordon Adams Wehner ,  Edward P. Smith ,  Stephanie Bostwick

    IPC: H01L27/146 ,  H01L31/102 ,  H01L31/109 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/101

    CPC classification number: H01L27/14629 ,  H01L27/14669 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/1013 ,  H01L31/109 ,  Y02E10/544

    Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector (110) includes a semiconductor absorber layer (210, 410A, 410B, 610, 810, 1010, 1030, 1210, 1230) having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer (220, 630, 830, 1020, 1040) coupled to the absorber layer (210, 410A, 41013, 610, 810, 1010, 1030, 1210, 1230) and having a second electrical conductivity type, and a resonant cavity coupled to the collector layer (220, 630, 830, 1020, 1040) and having a first mirror (240) and a second mirror (245).

    Abstract translation: 用于提供单色或多色光电探测器的方法和结构，利用腔谐振获得性能优势。 在一个示例中，辐射检测器（110）包括具有第一导电类型的半导体吸收层（210,410A，410B，610,810,1010,1030,1210,1230）以及响应于第一导电类型中的辐射的能带隙 耦合到所述吸收层（210,410A，41013,610,810,1010,1030,1210,1230）并且具有第二导电类型的半导体集电极层（220,630,830,1020,1040） 以及耦合到所述集电极层（220,630,820,1020,1040）并且具有第一反射镜（240）和第二反射镜（245）的谐振腔。

    Dynamic polarizer having material operable to alter its conductivity responsive to an applied stimulus
    5.
    发明授权
    Dynamic polarizer having material operable to alter its conductivity responsive to an applied stimulus 有权
    动态偏振器具有可操作以响应于施加的刺激改变其导电性的材料

    公开(公告)号：US09305948B2

    公开(公告)日：2016-04-05

    申请号：US14291098

    申请日：2014-05-30

    Applicant: RAYTHEON COMPANY

    Inventor： Justin Gordon Adams Wehner ,  Siddhartha Ghosh

    IPC: H01L27/146 ,  G02B27/28 ,  G01J4/04 ,  G02F1/01 ,  H04N5/225 ,  H04N5/33

    CPC classification number: H01L27/14609 ,  G01J4/04 ,  G02B27/286 ,  G02B27/288 ,  G02F1/0136 ,  H04N5/2254 ,  H04N5/33

    Abstract: A dynamically controllable polarizer integrated with an imaging detector to provide “on demand” variable polarization measurements. In one example, an imaging system includes a detector array including a plurality of pixels arranged in a two-dimensional array, and a dynamic polarizer coupled to the detector array, the dynamic polarizer including at least one patterned layer of a material disposed on the detector array, the material being operable to alter its conductivity responsive to an applied stimulus to reversibly transition between a polarizing state and a non-polarizing state.

    Abstract translation: 与成像检测器集成的动态可控偏振器以提供“按需”可变偏振测量。 在一个示例中，成像系统包括包括以二维阵列排列的多个像素的检测器阵列和耦合到检测器阵列的动态偏振器，动态偏振器包括设置在检测器上的材料的至少一个图案化层 阵列，所述材料可操作以响应于施加的刺激改变其导电性，以在极化状态和非极化状态之间可逆地转变。

    Superlattice electro-optic device including reconfigurable optical elements
    6.
    发明授权
    Superlattice electro-optic device including reconfigurable optical elements 有权

    公开(公告)号：US11953765B2

    公开(公告)日：2024-04-09

    申请号：US18298097

    申请日：2023-04-10

    Applicant: Raytheon Company

    Inventor： Jamal I. Mustafa ,  Justin Gordon Adams Wehner ,  Christopher R. Koontz

    IPC: G02F1/017

    CPC classification number: G02F1/017 ,  G02F2203/11 ,  G02F2203/52

    Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.

    COMBINED NEUTRON AND GAMMA-RAY DETECTOR AND COINCIDENCE TEST METHOD
    9.
    发明申请
    COMBINED NEUTRON AND GAMMA-RAY DETECTOR AND COINCIDENCE TEST METHOD 审中-公开

    公开(公告)号：US20170192113A1

    公开(公告)日：2017-07-06

    申请号：US14989590

    申请日：2016-01-06

    Applicant: Raytheon Company

    Inventor： David R. Rhiger ,  Justin Gordon Adams Wehner ,  Kelly Jones ,  Siddhartha Ghosh

    IPC: G01T3/08 ,  G01T1/24

    CPC classification number: G01T3/08 ,  G01T1/24 ,  G01T1/247

    Abstract: A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material adjacent one side of a glass plate and a Gd layer on an opposite side of the glass plate, between the glass plate and a layer of silicon PIN material to form an assembly that is bounded by electrodes, including a semiconductor anode on one side of the semiconductor layer, a cathode connected to the glass plate, and a Si PIN anode on a side of the Si PIN layer opposite the semiconductor anode. The method includes the steps of: (1) monitoring the electrical signal at each of the semiconductor anode and the Si PIN anode, and (2) comparing signals from the semiconductor anode and the SI PIN anode to differentiate between gamma-ray events and neutron events based on predetermined criteria.

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