公开(公告)号：US20150349006A1

公开(公告)日：2015-12-03

申请号：US14291098

申请日：2014-05-30

Applicant: RAYTHEON COMPANY

Inventor： Justin Gordon Adams Wehner ,  Siddhartha Ghosh

IPC: H01L27/146 ,  G02B27/28

CPC classification number: H01L27/14609 ,  G01J4/04 ,  G02B27/286 ,  G02B27/288 ,  G02F1/0136 ,  H04N5/2254 ,  H04N5/33

Abstract: A dynamically controllable polarizer integrated with an imaging detector to provide “on demand” variable polarization measurements. In one example, an imaging system includes a detector array including a plurality of pixels arranged in a two-dimensional array, and a dynamic polarizer coupled to the detector array, the dynamic polarizer including at least one patterned layer of a material disposed on the detector array, the material being operable to alter its conductivity responsive to an applied stimulus to reversibly transition between a polarizing state and a non-polarizing state.

Abstract translation: 与成像检测器集成的动态可控偏振器以提供“按需”可变偏振测量。 在一个示例中，成像系统包括包括以二维阵列排列的多个像素的检测器阵列和耦合到检测器阵列的动态偏振器，动态偏振器包括设置在检测器上的材料的至少一个图案化层 阵列，所述材料可操作以响应于施加的刺激改变其导电性，以在极化状态和非极化状态之间可逆地转变。

公开(公告)号：US09305948B2

公开(公告)日：2016-04-05

申请号：US14291098

申请日：2014-05-30

Applicant: RAYTHEON COMPANY

Inventor： Justin Gordon Adams Wehner ,  Siddhartha Ghosh

IPC: H01L27/146 ,  G02B27/28 ,  G01J4/04 ,  G02F1/01 ,  H04N5/225 ,  H04N5/33

CPC classification number: H01L27/14609 ,  G01J4/04 ,  G02B27/286 ,  G02B27/288 ,  G02F1/0136 ,  H04N5/2254 ,  H04N5/33

Abstract: A dynamically controllable polarizer integrated with an imaging detector to provide “on demand” variable polarization measurements. In one example, an imaging system includes a detector array including a plurality of pixels arranged in a two-dimensional array, and a dynamic polarizer coupled to the detector array, the dynamic polarizer including at least one patterned layer of a material disposed on the detector array, the material being operable to alter its conductivity responsive to an applied stimulus to reversibly transition between a polarizing state and a non-polarizing state.

Abstract translation: 与成像检测器集成的动态可控偏振器以提供“按需”可变偏振测量。 在一个示例中，成像系统包括包括以二维阵列排列的多个像素的检测器阵列和耦合到检测器阵列的动态偏振器，动态偏振器包括设置在检测器上的材料的至少一个图案化层 阵列，所述材料可操作以响应于施加的刺激改变其导电性，以在极化状态和非极化状态之间可逆地转变。

公开(公告)号：US09702988B1

公开(公告)日：2017-07-11

申请号：US14989590

申请日：2016-01-06

Applicant: Raytheon Company

Inventor： David R Rhiger ,  Justin Gordon Adams Wehner ,  Kelly Jones ,  Siddhartha Ghosh

IPC: G01T3/08 ,  G01T1/24

CPC classification number: G01T3/08 ,  G01T1/24 ,  G01T1/247

Abstract: A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material adjacent one side of a glass plate and a Gd layer on an opposite side of the glass plate, between the glass plate and a layer of silicon PIN material to form an assembly that is bounded by electrodes, including a semiconductor anode on one side of the semiconductor layer, a cathode connected to the glass plate, and a Si PIN anode on a side of the Si PIN layer opposite the semiconductor anode. The method includes the steps of: (1) monitoring the electrical signal at each of the semiconductor anode and the Si PIN anode, and (2) comparing signals from the semiconductor anode and the SI PIN anode to differentiate between gamma-ray events and neutron events based on predetermined criteria.

公开(公告)号：US20170192113A1

公开(公告)日：2017-07-06

申请号：US14989590

申请日：2016-01-06

Applicant: Raytheon Company

Inventor： David R. Rhiger ,  Justin Gordon Adams Wehner ,  Kelly Jones ,  Siddhartha Ghosh

IPC: G01T3/08 ,  G01T1/24

CPC classification number: G01T3/08 ,  G01T1/24 ,  G01T1/247

Abstract: A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material adjacent one side of a glass plate and a Gd layer on an opposite side of the glass plate, between the glass plate and a layer of silicon PIN material to form an assembly that is bounded by electrodes, including a semiconductor anode on one side of the semiconductor layer, a cathode connected to the glass plate, and a Si PIN anode on a side of the Si PIN layer opposite the semiconductor anode. The method includes the steps of: (1) monitoring the electrical signal at each of the semiconductor anode and the Si PIN anode, and (2) comparing signals from the semiconductor anode and the SI PIN anode to differentiate between gamma-ray events and neutron events based on predetermined criteria.

公开(公告)号：US20170012162A1

公开(公告)日：2017-01-12

申请号：US14792962

申请日：2015-07-07

Applicant: Raytheon Company

Inventor： Siddhartha Ghosh

IPC: H01L31/107 ,  H01L31/0352 ,  G06F17/50 ,  H01L31/0304

CPC classification number: H01L31/1075 ,  G06F17/5022 ,  G06F2217/02 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/1844 ,  Y02E10/544

Abstract: In one aspect, an avalanche photodiode, includes an absorber, a first superlattice structure directly connected to the absorber and configured to multiply holes and a second superlattice structure directly connected to the first superlattice structure and configured to multiply electrons. The first and second superlattice structures include III-V semiconductor material. The avalanche photodiode is a dual mode device configured to operate in either a linear mode or a Geiger mode. In another aspect, a method includes fabricating the avalanche diode.

Abstract translation: 在一个方面，雪崩光电二极管包括吸收器，直接连接到吸收器并且被配置为乘以空穴的第一超晶格结构和直接连接到第一超晶格结构并被配置为乘以电子的第二超晶格结构。 第一和第二超晶格结构包括III-V族半导体材料。 雪崩光电二极管是配置为以线性模式或盖革模式操作的双模式设备。 另一方面，一种方法包括制造雪崩二极管。

公开(公告)号：US09859453B2

公开(公告)日：2018-01-02

申请号：US14792962

申请日：2015-07-07

Applicant: Raytheon Company

Inventor： Siddhartha Ghosh

IPC: H01L31/107 ,  H01L31/0304 ,  H01L31/0352 ,  G06F17/50

CPC classification number: H01L31/1075 ,  G06F17/5022 ,  G06F2217/02 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/1844 ,  Y02E10/544

Abstract: In one aspect, an avalanche photodiode, includes an absorber, a first superlattice structure directly connected to the absorber and configured to multiply holes and a second superlattice structure directly connected to the first superlattice structure and configured to multiply electrons. The first and second superlattice structures include III-V semiconductor material. The avalanche photodiode is a dual mode device configured to operate in either a linear mode or a Geiger mode. In another aspect, a method includes fabricating the avalanche diode.