公开(公告)号：WO2018191104A1

公开(公告)日：2018-10-18

申请号：PCT/US2018/026337

申请日：2018-04-05

Applicant: RAYTHEON COMPANY

Inventor： KILCOYNE, Sean P. ,  MILLER, Eric R.

IPC: H01L21/683 ,  H01L23/31

Abstract: Methods, assemblies, and equipment are described for bonding one or more die (100a-100c) that may be of dissimilar thickness to a wafer. The die may be fabricated and singulated with a planarized oxide layer (114a) protecting from wafer dicing and handling debris one or more metallized post structures (112a-112c) connecting to an integrated circuit. Face sides (16a-106c) of the die are bonded to a first handle wafer (118), such that the respective post structures are aligned in a common plane. The substrate material back sides (108a-108c) of the bonded die are then thinned to a uniform thickness and bonded to a second handle wafer. The assembly may then be flipped, and the first handle wafer and protective layer including potential dicing and handling debris removed. The post structures are revealed, resulting in a composite wafer assembly including the second handle and one or more uniformly thinned die mounted thereto.

公开(公告)号：WO2019160577A1

公开(公告)日：2019-08-22

申请号：PCT/US2018/047250

申请日：2018-08-21

Applicant: RAYTHEON COMPANY

Inventor： KILCOYNE, Sean P. ,  MILLER, Eric R. ,  GRAMA, George

IPC: H01L21/3105 ,  H01L23/00

Abstract: A method of manufacturing an array of planar wafer level metal posts includes plating an array of posts within a photoresist (PR) pattern mold on a substrate of a first wafer. Stripping the PR pattern mold from the substrate and array of posts. Applying an oxide layer, at a temperature of below 150 degrees Celsius, over a surface of the first wafer. Applying chemical-mechanical polishing (CMP) to planarize the oxide layer and the array of posts.

公开(公告)号：WO2022108834A1

公开(公告)日：2022-05-27

申请号：PCT/US2021/059058

申请日：2021-11-12

Applicant: RAYTHEON COMPANY

Inventor： MUSTAFA, Jamal I. ,  ANDERSON, Robert C. ,  VAMPOLA, John L. ,  KILCOYNE, Sean P. ,  MILLER, Eric R. ,  GRAMA, George

IPC: H01L27/146

Abstract: A direct-bond hybridization (DBH) method is provided to assemble a sensor wafer device. The DBH method includes fabricating an optical element on a handle wafer and depositing first oxide with n-x thickness on the optical element where n is an expected final oxide thickness of the sensor wafer, depositing second oxide with x thickness onto a sensor wafer, executing layer transfer of the optical element by a DBH fusion bond technique to the sensor wafer whereby the first and second oxides form an oxide layer of n thickness between the optical element and the sensor wafer and removing the handle wafer.

公开(公告)号：EP3610501A1

公开(公告)日：2020-02-19

申请号：EP18721210.5

申请日：2018-04-05

Applicant: Raytheon Company

Inventor： KILCOYNE, Sean P. ,  MILLER, Eric R.

IPC: H01L21/683 ,  H01L23/31