公开(公告)号：US3696272A

公开(公告)日：1972-10-03

申请号：US3696272D

申请日：1970-08-21

Applicant: RCA CORP

Inventor： ASSOUR JACQUES MAYER

IPC: H01L29/00 ,  H01L5/00

CPC classification number: H01L29/00

Abstract: An avalanche diode which will oscillate to generate microwave powers in the frequency range of 2 to 16 gigahertz with efficiencies of up to at least 30 percent. The diode will also function as a microwave amplifier in the same frequency range. The diode includes a body of semiconductor material having two spaced apart regions and a third region between and contiguous to both of the other regions. The outer two regions are of low resistivity and of opposite conductivity type. The third intermediate region is of a conductivity type the same as one of the outer regions and forms an abrupt or hyperabrupt PN junction with the other of the outer regions. The third region is of a thickness of between 0.5 and 3 microns and a resistivity of between 0.5 and 10 ohm-cm.

Abstract translation: 这个雪崩二极管将在2至16千兆赫兹的频率范围内振荡以产生微波功率，效率高达至少30％。 二极管也将作为相同频率范围内的微波放大器。 二极管包括具有两个间隔开的区域的半导体材料体，以及位于其两个区域之间并与其邻接的第三区域。 外部两个区域具有低电阻率和相反导电类型。 第三中间区域具有与外部区域中的一个相同的导电类型，并且与外部区域中的另一个形成突然或超破坏的PN结。 第三区域的厚度为0.5至3微米，电阻率为0.5至10欧姆厘米。

公开(公告)号：US3619734A

公开(公告)日：1971-11-09

申请号：US3619734D

申请日：1969-12-17

Applicant: RCA CORP

Inventor： ASSOUR JACQUES MAYER ,  ROSEN ARYE

IPC: H01L23/36 ,  H01L25/03 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L24/49 ,  H01L23/36 ,  H01L24/45 ,  H01L24/48 ,  H01L25/03 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/16195 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A high power semiconductor device comprising a housing having an enclosed chamber therein and a plurality of semiconductor elements mounted in the chamber and electrically connected in series. The semiconductor elements are individually mounted in spaced relation on a plate of an electrically insulating material which is a good conductor of heat and are electrically connected between a metal body secured to one side of the plate and a metal cover secured to the other side of the plate.

公开(公告)号：US3659222A

公开(公告)日：1972-04-25

申请号：US3659222D

申请日：1970-09-01

Applicant: RCA CORP

Inventor： ASSOUR JACQUES MAYER ,  ROSEN ARYE ,  REYNOLDS JAMES FRANCIS

IPC: H03B1/00 ,  H03B9/14 ,  H03B7/14

CPC classification number: H03B9/147 ,  H03B2201/014

Abstract: A high efficiency mode avalanche diode oscillator is disclosed. The avalanche diode and a tuning capacitor are connected in parallel at a high microwave voltage point at one end of a resonant transmission line section electrically one-eighth wavelength long at the operating frequency of the oscillator, so as to match the complex impedance of the diode to a load impedance, and to provide the high efficiency mode of operation.

Abstract translation: 公开了一种高效率模式雪崩二极管振荡器。 雪崩二极管和调谐电容器在谐振传输线部分的一端的高微波电压点处以振荡器的工作频率电八分之一波长的长度并联连接，以便匹配二极管的复阻抗 到负载阻抗，并提供高效率的操作模式。

公开(公告)号：DE2758616A1

公开(公告)日：1978-07-13

申请号：DE2758616

申请日：1977-12-29

Applicant: RCA CORP

Inventor： ASSOUR JACQUES MAYER ,  BATES THERESA IRENE ,  BENDER JOHN ROBERT ,  NEILSON JOHN MANNING SAVIDGE

IPC: H01L21/331 ,  H01L29/08 ,  H01L29/73 ,  H01L29/74 ,  H01L29/747 ,  H01L29/861

Abstract: A semiconductor thyristor device having a cathode region and an anode region comprises ballast means adjacent thereto. The device further comprises first and second electrode means which are positioned such that only the cathode region and the anode region respectively are contacted thereby. The present structure is compatible with conventional device structures.