公开(公告)号：KR860000712B1

公开(公告)日：1986-06-07

申请号：KR820001398

申请日：1982-03-31

Applicant: RCA CORP

Inventor： AVERY LESLIE R

IPC: H04N3/18 ,  H01L27/02 ,  H01L27/06 ,  H03K17/08

Abstract: A protection circuit is disclosed to protect circuitry formed within an integrated circuit from damage due to excessively high voltage transients. The protection circuit comprises a PNPN structure forming a silicon controlled rectifier (SCR) and metal oxide semiconductor (MOS) transistor integral to the SCR structure. The SCR and the MOS transistors are arranged to form a two terminal protection circuit which is rendered conductive when the potential difference across the two terminals is greater than a predetermined threshold. In one embodiment, the gate electrode of the MOS transistor is connected to the reference terminal, and in another to the signal terminal.

公开(公告)号：KR860000714B1

公开(公告)日：1986-06-07

申请号：KR820000403

申请日：1982-01-30

Applicant: RCA CORP

Inventor： AVERY LESLIE R

IPC: H01L29/74 ,  H01L27/02 ,  H01L27/07 ,  H03K17/0814

Abstract: A protection circuit is disclosed to protect circuitry inside an integrated circuit from damage due to high voltage transients. The protection circuit comprises a PNPN structure forming a silicon controlled rectifier (SCR) and a resistive element integral to the SCR structure. The SCR and the resistive element are arranged to form a two terminal protection circuit which is rendered conductive when the potential difference across the two terminals is greater than one forward biased PN junction voltage drop. In one embodiment the resistive element is a linear resistor and in another embodiment is a non-linear resistor in the form of a diode connected transistor.

公开(公告)号：CA1170785A

公开(公告)日：1984-07-10

申请号：CA399038

申请日：1982-03-22

Applicant: RCA CORP

Inventor： AVERY LESLIE R

IPC: H04N3/18 ,  H01L27/02 ,  H01L27/06 ,  H03K17/08 ,  H01L29/86

Abstract: RCA 76,823 INTEGRATED PROTECTION CIRCUIT Disclosed is a protection circuit which may be used, for example, in a television receiver to protect circuitry formed within an integrated circuit from damage due to excessively high voltage transients. The protection circuit comprises a PNPN structure forming a silicon controlled rectifier (SCR) and metal-oxide-semiconductor (MOS) transistor integral to the SCR structure. The SCR and the MOS transistors are arranged to form a two terminal protection circuit which is rendered conductive when the potential difference across the two terminals is greater than a predetermined threshold. One terminal of the protection circuit is connected to an input or output signal terminal of the protected circuit, and the other terminal is connected to a reference terminal to which a reference potential such as ground potential is applied. Transient voltages appearing at the integrated circuit terminal greater than the predetermined threshold voltage causes the protection circuit to conduct current, thereby dissipating the energy of the high voltage transient and protecting the integrated circuit from damage. In one embodiment, the gate electrode of the MOS transistor is connected to the reference terminal, and in another to the signal terminal. The latter connection provides a much larger predetermined threshold voltage than the former, and typically considerably in excess of the supply voltage.

公开(公告)号：CA1161968A

公开(公告)日：1984-02-07

申请号：CA391274

申请日：1981-12-01

Applicant: RCA CORP

Inventor： AVERY LESLIE R

IPC: H01L27/06 ,  H01L21/331 ,  H01L21/8249 ,  H01L27/02 ,  H01L29/73 ,  H01L29/78 ,  H01L29/87 ,  H01L29/60

Abstract: RCA 75,166 PROTECTION CIRCUIT FOR INTEGRATED CIRCUIT DEVICES The protection circuit is a four layer PNPN device which includes a PMOS IGFET. The device is designed to pass current to ground when large transients are imposed across its two external terminals, thereby protecting the integrated circuit.

公开(公告)号：CA1170784A

公开(公告)日：1984-07-10

申请号：CA394955

申请日：1982-01-26

Applicant: RCA CORP

Inventor： AVERY LESLIE R

IPC: H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L27/08 ,  H01L29/866 ,  H01L29/90

Abstract: RCA 74,612 PROTECTIVE SEMICONDUCTOR DEVICE UTILIZING BACK-TO-BACK ZENER DIODES A semiconductor device utilized in a monolithic integrated circuit for protection against large voltage transients comprises back-to-back zener diodes formed by two separate regions of one type conductivity extending through an epitaxial layer of the opposite type conductivity and contacting a buried pocket of the opposite type conductivity to form PN junctions therewith. In the preferred embodiment, one of the one-type-conductivity regions completely surrounds the other region of one type conductivity.

公开(公告)号：CA1090466A

公开(公告)日：1980-11-25

申请号：CA274298

申请日：1977-03-18

Applicant: RCA CORP

Inventor： AVERY LESLIE R

IPC: H04N5/08

Abstract: IMPROVED TV SYNC PULSE SEPARATOR AND NOISE GATE A constant current source supplies a bias current through a diode chain, establishing a first voltage at a terminal coupled to the string. A DC restorer circuit, responsive to a source of composite video signals, couples an additional current through the diode chain during the sync interval. This additional current establishes a second voltage level at the terminal. The second voltage is compared with a reference voltage for producing output signals synchronized with the sync pulses.

公开(公告)号：CA1011409A

公开(公告)日：1977-05-31

申请号：CA196977

申请日：1974-04-08

Applicant: RCA CORP

Inventor： AVERY LESLIE R

IPC: G05F3/22 ,  H03F3/18 ,  H03F3/20 ,  H03F3/26 ,  H03F3/30 ,  H03F3/45

Abstract: 1431565 Transistor amplifying circuits RCA CORPORATION 4 July 1973 [13 April 1973] 18030/73 Heading H3T A phase-splitting arrangement comprises a transistor of first conductivity type the collector of which is connected to the emitter of a transistor of second conductivity type and also to a source of current 2I c comprising a current amplifier of predetermined gain and having an input current I c . The emitter circuit of the first transistor comprises a load resistor of such value that it passes a current I c and across which the first output is obtained, while the collector circuit of the second transistor comprises a resistor of equal value across which the second output is obtained. In an embodiment, the first transistor is replaced by a Darlington pair 102, 103 and the second by a further Darlington pair 107, 207, and the source of current 2I c comprises a transistor 224. The transistor 224 is biased by means of a circuit comprising Darling- ton pair 202, 203 and resistor 210 identical with the Darlington pair 102, 103 and resistor 110 and so passing current I c , transistor 223 and diode-connected transistors 221, 222. In another embodiment a single transistor 107 (Fig. 3, not shown) is used, its base being connected to the collectors of transistors 202, 203, while transistor 224 is replaced by a direct connection. The arrangement provides symmetrical limiting.

公开(公告)号：CA944085A

公开(公告)日：1974-03-19

申请号：CA110909

申请日：1971-04-20

Applicant: RCA CORP

Inventor： AVERY LESLIE R

IPC: H03K4/72 ,  H04N3/16 ,  H04N3/233

Abstract: S-shaping is introduced into a sawtooth waveform by a combination of positive and negative feedback of separately adjustable, generally parabolic voltage waveforms so as to provide a suitable field (vertical) deflection signal for a wide deflection angle kinescope. Output and drive transistors are cut off relatively rapidly at the end of scan and are returned to conduction at the beginning of scan by coupling capacitive elements in the sawtooth generating circuit to the inputs of the transistors.

公开(公告)号：CA1195432A

公开(公告)日：1985-10-15

申请号：CA436839

申请日：1983-09-16

Applicant: RCA CORP

Inventor： AVERY LESLIE R

IPC: G05F1/613 ,  G05F3/22 ,  H01L21/822 ,  H01L23/62 ,  H01L27/02 ,  H01L27/04 ,  H02H7/20 ,  H02H9/04 ,  H04N3/18 ,  H01L23/56

Abstract: PROTECTION CIRCUIT FOR INTEGRATED CIRCUIT DEVICES A pair of protection circuits, each forming a silicon controlled rectifier (SCR) for protecting a circuit against either negative or positive voltage transients, is formed in a single isolated region together with a bond pad. A second embodiment also includes a sense resistor in the isolated region.

公开(公告)号：CA1181870A

公开(公告)日：1985-01-29

申请号：CA436139

申请日：1983-09-06

Applicant: RCA CORP

Inventor： AVERY LESLIE R

IPC: H01L27/04 ,  H01L29/74

Abstract: INTEGRATED CIRCUIT PROTECTION DEVICE Disclosed is a protection circuit which may be used, for example, in a television receiver to protect circuitry formed within an integrated circuit from damage due to excessively high voltage transients. The protection circuit comprises a PNPN structure forming a silicon controlled rectifier (SCR) and metal-oxide-semiconductor (MOS) transistor integral to the SCR structure. The SCR and the MOS transistors are arranged to form a two terminal protection circuit which is rendered conductive when the potential difference across the two terminals is greater than a predetermined threshold. One terminal of the protection circuit is connected to an input or output signal terminal of the protected circuit, and the other terminal is connected to a reference terminal to which a reference potential such as ground potential is applied. Transient voltages appearing at the integrated circuit terminal greater than the predetermined threshold voltage causes the protection circuit to conduct current, thereby dissipating the energy of the high voltage transient and protecting the integrated circuit from damage. In one embodiment, the gate electrode of the MOS transistor is connected to the reference terminal, and in another to the signal terminal. The latter connection provides a much larger predetermined threshold voltage than the former, and typically considerably in excess of the supply voltage.