公开(公告)号：KR800001172B1

公开(公告)日：1980-10-20

申请号：KR760003148

申请日：1976-12-21

Applicant: RCA CORP

Inventor： COHEN S ,  FABULA J

IPC: C01B33/12

Abstract: Silicon oxide layers for semiconductor devices with low sensitivity to radiation are prepd. Thus, 0 at 2 l/min was passed over a silicone platelet (surface orientation parallel to (100) crystal plane) heated at 900≦̸C in a tubular oven (diam. 6.35 cm), with simultaneous addition of sufficient H to react with 7% of the 0 present. After 45 min, the H flow was stopped and the 0 was increased to 4 l/min to give an oxide platelet resistant to a radiation dose of 107 rad.

公开(公告)号：IN145547B

公开(公告)日：1978-11-04

申请号：IN2053CA1976

申请日：1976-11-16

Applicant: RCA CORP

Inventor： FABULA J ,  COHEN S

IPC: H01L29/78 ,  H01L21/316 ,  H01L21/336 ,  B01J17/00 ,  C01B33/00