公开(公告)号：US3622712A

公开(公告)日：1971-11-23

申请号：US3622712D

申请日：1969-08-29

Applicant: RCA CORP

Inventor： MOORE ROBERT MILTON ,  BUSANOVICH CHARLES JOHN

IPC: H01L21/10 ,  H01L21/108 ,  H01L29/00 ,  H04R21/04 ,  H01L3/04 ,  H01L7/08

CPC classification number: H01L21/108 ,  H01L21/02422 ,  H01L21/02439 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02631 ,  H01L21/02672 ,  H01L21/101 ,  H01L29/00

Abstract: A semiconductor device comprising contiguous layers of crystalline selenium and cadmium selenide with a P-N heterojunction therebetween disposed on a high work function electrode. A thin tellurium film is disposed between the electrode and the selenium layer, and acts as a buffer to provide compatibility between the selenium crystalline structure and the structure of the underlaying electrode. When employed as a stress-sensitive transducer, the device is disposed on a flexible substrate. The device may also be employed as a thin-film diode.

公开(公告)号：DE2613843A1

公开(公告)日：1976-10-14

申请号：DE2613843

申请日：1976-03-31

Applicant: RCA CORP

Inventor： BUSANOVICH CHARLES JOHN ,  FISCHER JOHN THEODORE ,  MOORE ROBERT MILTON ,  RAALTE JOHN A VAN

IPC: G03G5/08 ,  H01J29/45 ,  H01L31/00 ,  H01L31/0248 ,  H01L31/0264 ,  H01L31/08

Abstract: A low dark current photoconductive body includes an aluminum oxide overlayer on a cadmium selenide base layer. A transition region is provided at the interface region between the base layer and the overlayer and consists of a graded transition of cadmium and selenium with increasing amounts of aluminum and oxygen. An alternative body is disclosed omitting the overlayer. A blocking contact is provided within a portion of the body including the overlayer and/or the transition region.

公开(公告)号：DE2641077A1

公开(公告)日：1977-03-24

申请号：DE2641077

申请日：1976-09-11

Applicant: RCA CORP

Inventor： BUSANOVICH CHARLES JOHN ,  MOORE ROBERT MILTON

IPC: H01L31/10 ,  H01L21/06 ,  H01L29/267 ,  H01L29/47 ,  H01L29/861 ,  H01L31/0272 ,  H01L29/18

Abstract: A rectifying junction suitable for use in photosensitive devices is fabricated between a polycrystalline selenium layer and an electrode of n-type or low work function metal material.

公开(公告)号：DE2641041A1

公开(公告)日：1977-03-24

申请号：DE2641041

申请日：1976-09-11

Applicant: RCA CORP

Inventor： BUSANOVICH CHARLES JOHN ,  MOORE ROBERT MILTON

IPC: G03G5/14 ,  G03G5/043 ,  G03G5/082 ,  H01L31/0264