公开(公告)号：US2929885A

公开(公告)日：1960-03-22

申请号：US35612853

申请日：1953-05-20

Applicant: RCA CORP

Inventor： MUELLER CHARLES W

IPC: H04R23/00

CPC classification number: H04R23/006

公开(公告)号：US3166694A

公开(公告)日：1965-01-19

申请号：US2031360

申请日：1960-04-06

Applicant: RCA CORP

Inventor： MUELLER CHARLES W

IPC: H01L21/00 ,  H01L21/306 ,  H01L29/00

CPC classification number: H01L21/00 ,  H01L21/30604 ,  H01L29/00

公开(公告)号：US2870050A

公开(公告)日：1959-01-20

申请号：US66791657

申请日：1957-06-25

Applicant: RCA CORP

Inventor： MUELLER CHARLES W ,  PRINTON JANE M

IPC: C30B31/02 ,  H01L21/00 ,  H01L21/22 ,  H01L29/00 ,  H01L29/06 ,  H01L29/167

CPC classification number: H01L29/06 ,  C30B31/02 ,  H01L21/00 ,  H01L21/22 ,  H01L29/00 ,  H01L29/167

公开(公告)号：US2825667A

公开(公告)日：1958-03-04

申请号：US50742155

申请日：1955-05-10

Applicant: RCA CORP

Inventor： MUELLER CHARLES W

IPC: C30B31/04 ,  H01L21/00

CPC classification number: C30B31/04 ,  H01L21/00 ,  Y10S438/92 ,  Y10T428/12528

公开(公告)号：US2434713A

公开(公告)日：1948-01-20

申请号：US56133944

申请日：1944-11-01

Applicant: RCA CORP

Inventor： MUELLER CHARLES W

IPC: H01J21/14

CPC classification number: H01J21/14 ,  H01J2893/0029

公开(公告)号：US3208924A

公开(公告)日：1965-09-28

申请号：US9642261

申请日：1961-03-17

Applicant: RCA CORP

Inventor： MUELLER CHARLES W

IPC: C25F3/12 ,  H01L21/00 ,  H01L21/3063 ,  H01L21/308 ,  H01L29/00

CPC classification number: H01L21/00 ,  C25F3/12 ,  H01L21/3063 ,  H01L21/3081 ,  H01L29/00 ,  Y10S438/979

公开(公告)号：US2967344A

公开(公告)日：1961-01-10

申请号：US71539358

申请日：1958-02-14

Applicant: RCA CORP

Inventor： MUELLER CHARLES W

IPC: H01L21/00 ,  H01L21/306 ,  H01L29/00

CPC classification number: H01L21/00 ,  H01L21/30604 ,  H01L29/00

公开(公告)号：US2817613A

公开(公告)日：1957-12-24

申请号：US33160353

申请日：1953-01-16

Applicant: RCA CORP

Inventor： MUELLER CHARLES W

IPC: C30B31/22 ,  H01L21/00 ,  H01L21/26

CPC classification number: H01L21/00 ,  C30B31/22 ,  H01L21/26

公开(公告)号：US2781480A

公开(公告)日：1957-02-12

申请号：US37164853

申请日：1953-07-31

Applicant: RCA CORP

Inventor： MUELLER CHARLES W

IPC: H01L25/07

CPC classification number: H01L25/074 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

公开(公告)号：CA1024267A

公开(公告)日：1978-01-10

申请号：CA222356

申请日：1975-03-18

Applicant: RCA CORP

Inventor： MUELLER CHARLES W ,  DOUGLAS EDWARD C

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/331 ,  H01L21/762 ,  H01L21/86 ,  H01L27/00 ,  H01L29/00 ,  H01L21/265

Abstract: A planar bipolar transistor is made by the successive ion implantations of selected atoms into selected regions of a layer of doped single-crystal silicon on an insulating substrate, such as sapphire or spinel. The silicon layer is epitaxially grown, has a thickness of between 0.5 and 5 mu m, and is formed in two strata of different resistivities. A collector contact well is ion implanted into the upper stratum and annealed to diffuse it into the lower stratum of lower resistivity. The transistor is isolated, as a mesa, on the substrate; and an edge-guard region is ion implanted through the periphery of the mesa, except in the region of the emitter-base junction.