Abstract:
A compact, microstrip directional coupler is described wherein two narrow strip-like conductors are closely spaced to each other so as to provide a signal coupling region therebetween. The two narrow conductors are spaced from a ground planar conductor by a substrate of dielectric material having a relatively high dielectric constant compared to the adjacent medium wherein the odd mode phase velocity of a signal propagating along the coupler is unequal to the even mode phase velocity thereof. An elongated aperture is located in the ground planar conductor in the coupling region to alter the odd mode phase velocity so that it is equal to the even mode phase velocity.
Abstract:
A waveguide structure is described wherein a section of waveguide is effectively shorted at one end thereof by a pair of conductive plates. Each of the plates is adjacent to a narrow wall of the waveguide section and extends from broad wall to broad wall across the aperture of the waveguide. The edge of one of the plates remote from the edge adjacent to a narrow wall is closely spaced from the remote edge of the other plate to form a gap between the edges midway between the narrow walls. The thickness of the plates and the spacing of the gap between the plates is arranged so that no appreciable radiation occurs due to the gap at the reflective end.
Abstract:
A semiconductor device having at least two contacts on a body of semiconductor material. One of the contacts is in a plane spaced from the plane of the other contacts and the edges of the one contact are in substantial alignment with the adjacent edges of the other contacts. The material under either the edges of the one contact or the adjacent edges of the other contacts is removed so that such edges project in cantilever fashion beyond the material under the respective contact.
Abstract:
A connector for coupling a coaxial transmission line to a strip transmission line includes a coaxial structure having an inner conductor projecting beyond the end of the connector a predetermined distance. A portion of the dielectric annular ring of the coaxial structure also projects beyond the end of the connector contiguous with the projecting portion of the inner conductor. The inner conductor and dielectric projections have a flat across them which is urged into registration with a conductor of the strip transmission line. The contiguous projecting dielectric annular ring resists the bending of the inner conductor projection urged against the strip transmission line.
Abstract:
A semiconductor body has an array of small metal film pads thereon. The pads are of uniform size and shape and are arranged with adjacent pads being uniformly spaced from each other. A metal terminal wire has a rounded end which fits between and contacts a plurality of the pads but is spaced from the surface of the semiconductor body so that the electrical connection between the terminal wire and the semiconductor body is through the pads.
Abstract:
The transistor is especially useful for high frequency switching applications. A conductive path between ohmic contacts will pass high frequency signals with very little impedance. The conductive path is comprised of a doped semiconductor layer of one conductivity type to which ohmic contacts are attached. The substrate of the device which underlies the layer is heavily doped with deep impurities of opposite conductivity type so that it has a high resistivity. The high resistivity of the substrate isolates the driving voltage used to switch the device from the signal passed between the ohmic contacts. The device can be turned "OFF" by reverse biasing the PN junction formed between the substrate and the layer. This is accomplished by imposing a driver voltage between one of the ohmic contacts and a metallic contact connected to the substrate.
Abstract:
The transistor is especially useful for high frequency switching applications. A conductive path between ohmic contacts will pass high frequency signals with very little impedance. The conductive path is comprised of a doped semiconductor layer of one conductivity type to which ohmic contacts are attached. The substrate of the device which underlies the layer is heavily doped with deep impurities of opposite conductivity type so that it has a high resistivity. The high resistivity of the substrate isolates the driving voltage used to switch the device from the signal passed between the ohmic contacts. The device can be turned "OFF" by reverse biasing the PN junction formed between the substrate and the layer. This is accomplished by imposing a driver voltage between one of the ohmic contacts and a metallic contact connected to the substrate.