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    2.
    发明专利
    未知

    公开(公告)号：FI875296A

    公开(公告)日：1988-06-09

    申请号：FI875296

    申请日：1987-12-01

    Applicant: RCA CORP

    Inventor： FURST DAVID ARTHUR ,  VIELAND LEON JOSEPH

    IPC: H01L49/02 ,  H01L45/00 ,  H01L

    Abstract: A MIM diode (10) has an insulator (14) with a maximum thickness of 80 nm and comprising a mixture of tantalum oxide and another oxide, such as aluminum oxide or silicon oxide. The mixture has a lower leakage current and higher non-linearity than an insulator comprising pure tantalum oxide. The other oxide can be between about 10-70 average mole percent of the insulator. The minimum thickness can be about 35 nm to prevent pinholes.

    10.
    发明专利
    未知

    公开(公告)号：FI91575B

    公开(公告)日：1994-03-31

    申请号：FI875296

    申请日：1987-12-01

    Applicant: RCA CORP

    Inventor： FURST DAVID ARTHUR ,  VIELAND LEON JOSEPH

    IPC: H01L49/02 ,  H01L45/00

    Abstract: A MIM diode (10) has an insulator (14) with a maximum thickness of 80 nm and comprising a mixture of tantalum oxide and another oxide, such as aluminum oxide or silicon oxide. The mixture has a lower leakage current and higher non-linearity than an insulator comprising pure tantalum oxide. The other oxide can be between about 10-70 average mole percent of the insulator. The minimum thickness can be about 35 nm to prevent pinholes.

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