公开(公告)号：KR800001107B1

公开(公告)日：1980-10-08

申请号：KR740002506

申请日：1974-05-29

Applicant: RCA CORP

Inventor： WHEATLEY C

IPC: H03F3/04

Abstract: Amplifier suitable for use in an audio-power amplifier to prevent over-dissipation of an output transistor includes PNP composite transistors(41-44) connected as common-emitter amplifiers comprising a PNP preamplifier transistor in direct coupled cascade with a plurality of paralleled NPN transistors. The emitter electrode of the PNP transistor is connected to a sensing resistor in the collector path of these NPN transistors, causing the base-to-emitter potential of the composite transistors if its emitter current exceeds a threshold current. By clamping this VBE if it exceeds a predetd. potential, the output transistor is protected.

公开(公告)号：US3723833A

公开(公告)日：1973-03-27

申请号：US3723833D

申请日：1971-07-19

Applicant: RCA CORP

Inventor： WHEATLEY C

IPC: H01L23/495 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L23/49568 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device of the type in which a semiconductor chip is mounted on a lead assembly having a chip mounting portion, thermal conductors, and electrical conductors. The chip has some elements which generate heat, which are located in one zone of the chip, and others which are sensitive to spatial thermal gradients, which are located in a different zone of the chip. The chip mounting portion of the lead assembly has an area substantially free of spatial thermal gradients and the zone of the chip containing the sensitive elements is mounted adjacent to this area.

Abstract translation: 一种半导体器件，其中半导体芯片安装在具有芯片安装部分，导热体和电导体的引线组件上。 芯片具有一些产生热量的元件，它们位于芯片的一个区域中，而其它元件则对位于芯片的不同区域的空间热梯度敏感。 引线组件的芯片安装部分具有基本上没有空间热梯度的区域，并且包含敏感元件的芯片的区域安装在该区域附近。

公开(公告)号：US3751726A

公开(公告)日：1973-08-07

申请号：US3751726D

申请日：1971-11-18

Applicant: RCA CORP

Inventor： EINTHOVEN W ,  WHEATLEY C

IPC: H03F3/343 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/07 ,  H01L27/082 ,  H01L29/08 ,  H01L29/73 ,  H03F3/34 ,  H03F3/347 ,  H01L19/00

CPC classification number: H01L27/0755 ,  H01L27/0825 ,  H01L29/0804

Abstract: A device employs two emitters in a common base region having a base-collector junction which only intersects a mesa edge of the device. A distributed resistance is defined between a base contact and a conductive layer substantially uniformly overlapping the outer periphery of one of the emitters which completely surrounds the base contact.

Abstract translation: 器件在具有仅与器件的台面边缘相交的基极 - 集电极结的公共基极区域中使用两个发射极。 分布电阻被限定在基本接触和导电层之间，基本均匀地重叠完全围绕基部接触的一个发射体的外周。

公开(公告)号：US3815037A

公开(公告)日：1974-06-04

申请号：US30902572

申请日：1972-11-24

Applicant: RCA CORP

Inventor： WHEATLEY C

IPC: G05F3/26 ,  H03F1/30 ,  H03F3/347 ,  H03F3/45 ,  H03F3/42

CPC classification number: H03F3/45479 ,  G05F3/265 ,  H03F1/307 ,  H03F3/347 ,  H03F3/45071

Abstract: An amplifier suitable for integrated circuit construction including an active device current repeater load arrangement having relatively high output impedance, good frequency response, temperature stability and signal handling capabilities. The current repeater load arrangement includes a diode connected transistor and a further transistor having proportionally related conduction characteristics. A current amplifier comprising cascaded transistors is connected between the collector of the further transistor and the bases of the further transistor and the diode connected transistor. An additional, unidirectionally conducting device, poled to conduct as the first one of the cascaded transistors ceases conduction, is coupled from the collector of the further transistor to the input of one of the cascaded transistors following the first.

Abstract translation: 适用于集成电路结构的放大器，包括具有相对高的输出阻抗的有源器件电流中继器负载布置，良好的频率响应，温度稳定性和信号处理能力。 当前中继器负载布置包括二极管连接的晶体管和具有成比例相关的导通特性的另一个晶体管。 包括级联晶体管的电流放大器连接在另一晶体管的集电极和另一晶体管的基极和二极管连接的晶体管之间。 作为第一级级晶体管停止导通的附加的单向导电器件，从另一晶体管的集电极耦合到第一级之后的级联晶体管中的一个的输入端。

公开(公告)号：US3790897A

公开(公告)日：1974-02-05

申请号：US13097471

申请日：1971-04-05

Applicant: RCA CORP

Inventor： WHEATLEY C

IPC: G06G7/16 ,  H03F3/343 ,  H03F3/45 ,  H03G1/00 ,  H03F3/68

CPC classification number: H03F3/45479 ,  G06G7/16 ,  H03F3/343 ,  H03F3/45071 ,  H03F2203/45024 ,  H03F2203/45031 ,  H03F2203/45178 ,  H03F2203/45188 ,  H03G1/0023

Abstract: Differential amplifier having reduced static and cross modulation errors. The amplifier includes first and second pairs of transistors, the emitters of each pair being connected to first and second current sources, respectively. A first additional transistor is connected at its emitter to the base of one transistor from each pair and at its base to the collector of one transistor from the first pair for forming a first input terminal. A second additional transistor is connected at its emitter to the base of the remaining transistors from each pair and at its base to the collector of the other transistor from the first pair for forming a second input terminal. A current signal is applied across the input terminals for controlling the subdivision of the current from the first current source between the two transistors of the first pair thereby controlling the subdivision of the current from the second current source between the two transistors of the second pair.

Abstract translation: 差分放大器具有降低的静态和交叉调制误差。 放大器包括第一和第二对晶体管，每对晶体管的发射极分别连接到第一和第二电流源。 第一附加晶体管在其发射极处从一对晶体管的基极连接到一个晶体管的基极，并且在其基极处与第一对晶体管的集电极连接，以形成第一输入端子。 第二附加晶体管在其发射极处连接到来自每对的剩余晶体管的基极，并且在其基极处从第一对连接到另一晶体管的集电极，以形成第二输入端子。 电流信号施加在输入端上，用于控制从第一对的两个晶体管之间的来自第一电流源的电流的细分，从而控制从第二对的两个晶体管之间的来自第二电流源的电流的细分。

公开(公告)号：US3851241A

公开(公告)日：1974-11-26

申请号：US39166473

申请日：1973-08-27

Applicant: RCA CORP

Inventor： WHEATLEY C

IPC: G01R1/28 ,  G01K7/01 ,  G05F1/613 ,  G05F3/26 ,  G01K7/00

CPC classification number: G05F3/265 ,  G01K7/01 ,  G05F1/613

Abstract: A fractional part of a voltage to be regulated is applied between the base electrodes of first and second emitter-coupled transistors having base-emitter junctions with different VBE versus current characteristics. The collector currents of the first and the second transistors are caused to be in a predetermined ratio by a degenerative feedback loop which adjusts the value of the voltage to be regulated. Since the aforesaid fractional part of this voltage must vary linearly with the temperature change of the first and second transistors in order to maintain their collector currents equal, the voltage to be regulated must vary inversely as this fraction with that temperature change. The fractional part can be of fixed value, in which case the voltage to be regulated will vary linearly with the temperature change of the first and second transistors, or it can be changed from one value to another to cause the voltage to be regulated to vary in a more complex manner with temperature.

Abstract translation: 在具有不同VBE与电流特性的基极 - 发射极结的第一和第二发射极耦合晶体管的基极之间施加要调节的电压的一小部分。 第一和第二晶体管的集电极电流通过调节要调节的电压的值的退化反馈回路成为预定的比例。 由于上述这部分电压必须随着第一和第二晶体管的温度变化而线性变化，以保持它们的集电极电流相等，所以要调节的电压必须与该温度变化的这个分数相反地变化。 分数部分可以是固定值，在这种情况下，要调节的电压将随着第一和第二晶体管的温度变化而线性变化，或者可以从一个值改变到另一个值，以使电压被调节以变化 以更复杂的方式与温度。

公开(公告)号：US3836995A

公开(公告)日：1974-09-17

申请号：US36388173

申请日：1973-05-25

Applicant: RCA CORP

Inventor： WHEATLEY C ,  EINTHOVEN W

IPC: H01L21/8222 ,  H01L21/331 ,  H01L23/485 ,  H01L23/488 ,  H01L27/07 ,  H01L27/082 ,  H01L29/73 ,  H01L27/08

CPC classification number: H01L27/0825 ,  H01L23/488 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L27/0755 ,  H01L2224/04026 ,  H01L2224/06181 ,  H01L2224/29116 ,  H01L2224/83191 ,  H01L2924/12036 ,  H01L2924/14 ,  H01L2924/0105 ,  H01L2924/00

Abstract: A semiconductor integrated Darlington circuit is provided comprising two transistors, two resistors, and a diode within a body of semiconductor material. The emitter region of one of the transistors completely encircles the emitter region of the other transistor at a surface of the body, whereby certain paths for current from the base contact of the one transistor beneath and around the emitter region thereof are significantly longer than those present in prior art devices, thus contributing to a higher value of one of the device resistors.

Abstract translation: 提供半导体集成达林顿电路，其包括两个晶体管，两个电阻器和半导体材料体内的二极管。 一个晶体管的发射极区域完全围绕在主体的表面处的另一个晶体管的发射极区域，由此在其发射极区域的下方和周围的一个晶体管的基极接触的电流的某些路径显着地长于存在的那些 在现有技术的器件中，因此有助于器件电阻器之一更高的值。

公开(公告)号：US3786364A

公开(公告)日：1974-01-15

申请号：US3786364D

申请日：1969-03-25

Applicant: RCA CORP

Inventor： WHEATLEY C

IPC: H02H5/04 ,  H03F1/52 ,  H03G3/30 ,  H03F21/00

CPC classification number: H03F1/52 ,  H02H5/044 ,  H03G3/30

Abstract: A protection transistor is connected between the input electrodes of a transistor amplifier. A fixed bias voltage approximately equal to the base-emitter threshold of conductivity of the protection transistor and a voltage porportional to the current through the amplifier transistor are applied between the base and emitter electrodes of the protection transistor.

Abstract translation: 保护晶体管连接在晶体管放大器的输入电极之间。 大约等于保护晶体管的基极 - 发射极阈值和与通过放大器晶体管的电流成比例的电压的固定偏置电压被施加在保护晶体管的基极和发射极之间。

公开(公告)号：BR7404571A

公开(公告)日：1976-02-10

申请号：BR457174

申请日：1974-06-04

Applicant: RCA CORP

Inventor： WHEATLEY C ,  OLEKSIJ SHEVCHENKO

IPC: H04N3/16 ,  H03K4/08

Abstract: In a horizontal deflection circuit including a switch for coupling an energy source to a deflection yoke and for inducing alternating current in an output transformer, two horizontal deflection coils are serially coupled between the energy source and a point of reference potential and a winding of the output transformer is serially coupled between the two deflection coils and poled in the circuit such that the retrace pulse component developed in the winding opposes the retrace pulse developed across the coils for reducing the total pulse voltage across the coils.

公开(公告)号：BR6912611D0

公开(公告)日：1973-02-15

申请号：BR21261169

申请日：1969-09-22

Applicant: RCA CORP

Inventor： WHEATLEY C

IPC: H03F3/347 ,  H03F3/45 ,  H03G1/00 ,  H03F3/34

Abstract: 1,274,672. Transistor amplifiers. R.C.A. CORPORATION. 26 Sept., 1969 [27 Sept., 1968], No. 46151/68. Heading H3T. An integrated differential amplifier circuit providing high voltage gain over a wide range of quiescent current levels comprises a longtailed pair 11, 12 (Fig. 1) with a collector load comprising transistors 14-18 interconnected as shown. The output of transistor 16 is inverted at 26 and combined with the output of 17 to provide an amplifier output at 27. The collectoremitter voltages at 14, 15 are substantially constant and equal to the sum of the base emitter voltages across transistors 16 or 17 and 18. Common mode signals, i.e. changes in quiescent current, produced by changing the base bias on transistor 13 will not affect the collector-emitter voltages of transistors 14, 15, and hence will not affect the outputs of transistors 16 and 17. However, for differential signals, transistors 14, 15 present a high impedance since their base drive, determined by the current through 16, 17, 18, is unchanged. Differential signals will therefore be passed to the output 27. In a modification (Fig. 2), transistors 28, 30 have ##10 3 and a collectorbase breakdown voltage of about one volt. Cascade connected transistors 29, 31 biased through base emitter junctions 32, 33 ensure that the collector-base voltages of transistors 28, 30 are zero, thus reducing collector-base leakage current. A transistor 41 provides initial conduction in transistor 18. A pair of transistors (35, 36, Fig. 3, not shown) may be cascodeconnected to transistors (17 11 , 18 11 ) in a manner similar to transistors 28, 30, 29, 31, to maintain equal gain in both halves of the amplifier. A further transistor (40) provides initial conduction in the base-emitter junctions controlling the cascode connected transistors (35, 36).