公开(公告)号：US20040192008A1

公开(公告)日：2004-09-30

申请号：US10653214

申请日：2003-09-03

Applicant: RENESAS TECHNOLOGY CORP.

Inventor： Takeshi Matsunuma

IPC: H01L021/20

CPC classification number: H01L21/76801 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76834 ,  H01L21/76877 ,  H01L28/91

Abstract: A method of manufacturing a semiconductor device including an interconnection and a capacitor formed with a Cu layer in accordance with the present invention includes the steps of forming an interlayer insulation layer, forming an interconnection hole and a capacitor hole in the interlayer insulation layer, filling the interconnection hole with the Cu layer to form an interconnection layer, and partly filling the capacitor hole with the Cu layer to form one electrode of the capacitor. The step of filling the interconnection hole with the Cu layer to form the interconnection layer and the step of partly filling the capacitor hole with the Cu layer to form one electrode of the capacitor are performed in a single process step. Thus, manufacturing process of the semiconductor device can be simplified.

Abstract translation: 根据本发明的制造包括互连的半导体器件和由Cu层形成的电容器的方法包括以下步骤：在层间绝缘层中形成层间绝缘层，形成互连孔和电容器孔，填充 与Cu层的互连孔形成互连层，并用Cu层部分地填充电容器孔以形成电容器的一个电极。 用Cu层填充互连孔以形成互连层的步骤以及用Cu层部分地填充电容器孔以形成电容器的一个电极的步骤在单个工艺步骤中进行。 因此，可以简化半导体器件的制造工艺。

公开(公告)号：US20040121593A1

公开(公告)日：2004-06-24

申请号：US10630747

申请日：2003-07-31

Applicant: Renesas Technology Corp.

Inventor： Takeshi Matsunuma

IPC: H01L021/3205 ,  H01L021/4763 ,  H01L021/44

CPC classification number: H01L21/31144 ,  H01L21/28079 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/76802 ,  H01L29/495

Abstract: A gate oxide film is formed on a substrate. A polysilicon film is formed on the gate oxide film. A ruthenium film is formed as a mask material on the polysilicon film. A resist pattern is formed on the ruthenium film. After the ruthenium film is patterned using the resist pattern as a mask, a the patterned ruthenium film is shrunk. After the polysilicon film is patterned using a shrunk the shrunken ruthenium film, the shrunk shrunken ruthenium film is removed.

Abstract translation: 在基板上形成栅极氧化膜。 在栅氧化膜上形成多晶硅膜。 在多晶硅膜上形成钌膜作为掩模材料。 在钌膜上形成抗蚀剂图案。 在使用抗蚀剂图案作为掩模对钌膜进行图案化之后，图案化的钌膜收缩。 在使用收缩的钌膜对多晶硅膜进行图案化之后，除去收缩的收缩的钌膜。