High-temperature capacitance type static pressure/dynamic pressure sensor and method of manufacturing the same
    1.
    发明专利
    High-temperature capacitance type static pressure/dynamic pressure sensor and method of manufacturing the same 审中-公开
    高温电容型静态压力/动态压力传感器及其制造方法

    公开(公告)号:JP2012032397A

    公开(公告)日:2012-02-16

    申请号:JP2011158751

    申请日:2011-07-20

    Inventor: GUO SHUWEN

    CPC classification number: G01L9/0075 G01L19/04 Y10T29/49002

    Abstract: PROBLEM TO BE SOLVED: To provide a capacitance type pressure probe or sensor for use at high temperature.SOLUTION: The capacitance type pressure sensor 100 includes a sapphire diaphragm 42 which is arranged in an internal detection chamber 30 of a probe housing, and has a first electrode 52 formed on a center part of the diaphragm 42. The center part of the diaphragm 42 and the first electrode 52 are adapted and configured to bend reacting to encountered pressure variation in the internal detection chamber 30 and through the pressure sensor 100. A sapphire substrate 46 having a second electrode 54 formed thereupon is fused to the sapphire diaphragm 42 mainly around a periphery thereof so as to form a sapphire stack and define a reference chamber 80 between the sapphire substrate 46 and the sapphire diaphragm 42. Before the sapphire diaphragm 42 is fused to the sapphire substrate 46, all contact surfaces are chemically treated and prepared using plasma excitation so as to form a bonding stack and lower the temperature needed for the fusion.

    Abstract translation: 要解决的问题:提供在高温下使用的电容式压力探测器或传感器。 电容型压力传感器100包括布置在探针外壳的内部检测室30中的蓝宝石膜片42,并且具有形成在隔膜42的中心部分上的第一电极52。 隔膜42和第一电极52适于和构造成弯曲,以响应于内部检测室30中和通过压力传感器100的压力变化。其上形成有第二电极54的蓝宝石衬底46与蓝宝石隔膜42熔合 主要围绕其周边,以便形成蓝宝石堆叠并在蓝宝石衬底46和蓝宝石光阑42之间限定参考室80.在将蓝宝石隔膜42熔合到蓝宝石衬底46之前,所有接触表面被化学处理和制备 使用等离子体激发以形成粘合堆叠并降低熔化所需的温度。 版权所有(C)2012,JPO&INPIT

    Pendulous accelerometer with balanced gas damping
    2.
    发明专利
    Pendulous accelerometer with balanced gas damping 审中-公开
    平衡加速度计与平衡气体阻尼

    公开(公告)号:JP2009109494A

    公开(公告)日:2009-05-21

    申请号:JP2008272656

    申请日:2008-10-23

    Inventor: GUO SHUWEN

    CPC classification number: G01P15/125 G01P15/0802 G01P15/131 G01P2015/0831

    Abstract: PROBLEM TO BE SOLVED: To provide a pendulous accelerometer with balanced gas damping.
    SOLUTION: The pendulous capacitive accelerometer 10 includes: a substrate 14 having a substantially planar upper surface with an electrode section; and a sensing plate having a central anchor portion 16 supported on the upper surface of the substrate 14 to define a hinge axis x. The sensing plate 12 includes: a solid proof mass 22 on a first side of the central anchor portion 16; and a substantially hollow proof mass 20 on a second side of the central anchor portion 16, providing for reduced overall chip size and balanced gas damping. The solid proof mass 22 has a first lower surface with a first electrode element thereon, and the substantially hollow proof mass 20 has a second lower surface with a second electrode element thereon. Both the solid proof mass 22 and the hollow proof mass 20 have the same capacitive sensing area. The sensing plate 12 rotates about the hinge axis x relative to the upper surface of the substrate 14 in response to an acceleration.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供具有平衡气体阻尼的下摆加速度计。 解决方案:下摆电容加速度计10包括:具有基本平坦的上表面的电极部分的基板14; 以及感测板,其具有支撑在基板14的上表面上以限定铰链轴线x的中心锚定部分16。 感测板12包括:在中心锚固部分16的第一侧上的固体质量块22; 以及在中心锚固部分16的第二侧上的基本上中空的质量块20,提供减小的总体切屑尺寸和平衡的气体阻尼。 固体质量块22具有在其上具有第一电极元件的第一下表面,并且基本上中空的质量块20具有在其上的第二电极元件的第二下表面。 固体质量块22和中空证明块20均具有相同的电容感测区域。 感测板12响应于加速度而相对于基板14的上表面围绕铰链轴线x旋转。 版权所有(C)2009,JPO&INPIT

    High temperature electrostatic capacitive type static/dynamic pressure sensor
    3.
    发明专利
    High temperature electrostatic capacitive type static/dynamic pressure sensor 审中-公开
    高温静电电容式静态/动态压力传感器

    公开(公告)号:JP2009162751A

    公开(公告)日:2009-07-23

    申请号:JP2008326837

    申请日:2008-12-24

    Inventor: GUO SHUWEN

    CPC classification number: G01L23/125 G01L9/0072

    Abstract: PROBLEM TO BE SOLVED: To provide a high temperature electrostatic capacitive type static/dynamic pressure sensor for the use of a pressure probe which has a diaphragm composed in order to enable more exact measurement of pressure (dynamic or static) at high temperature. SOLUTION: The electrostatic capacitive type pressure probe is used for high temperature, such as for use in a gas turbine engine. The electrostatic capacitive type probe or pressure sensor 10 includes a sensor housing 20 that defines an interior detection chamber 42 having a pressure port 36 and an interior reference chamber 52 positioned adjacent to a detection electrode 62. The reference chamber 52 is separated from the detection chamber 42 by a flexible diaphragm 44 made from Haynes 230 alloy, wherein the deflection of the diaphragm 44 in response to an applied pressure in the detection chamber 42 corresponds to a change in electrostatic capacitive value by the detection electrode 62. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种高温静电电容式静态/动态压力传感器,用于使用压力探头,该压力探头具有隔膜,以便能够在高温下更准确地测量压力(动态或静态) 。

    解决方案:静电电容型压力探头用于高温,例如用于燃气涡轮发动机。 静电电容型探针或压力传感器10包括传感器外壳20,该传感器壳体限定具有压力端口36的内部检测室42和邻近检测电极62定位的内部参考室52.参考室52与检测室 42通过由Haynes 230合金制成的柔性隔膜44,其中响应于检测室42中施加的压力的隔膜44的偏转对应于检测电极62的静电电容值的变化。COPYRIGHT :(( C)2009年,JPO&INPIT

    In-plane capacitance type mems accelerometer
    4.
    发明专利
    In-plane capacitance type mems accelerometer 审中-公开
    内置电容型MEMS加速度计

    公开(公告)号:JP2012141299A

    公开(公告)日:2012-07-26

    申请号:JP2011272954

    申请日:2011-12-14

    CPC classification number: G01P15/125 G01P15/0802 G01P2015/0814

    Abstract: PROBLEM TO BE SOLVED: To provide an extremely robust and high-performance triaxial accelerometer including both of an in-plane accelerometer and an out-of-plane accelerometer fabricated on a single chip by using a MEMS manufacturing technology.SOLUTION: A structure of the accelerometer includes an in-plane accelerometer with a substrate rigidly attached to an object, and a proof mass 102 formed from an integrally molded material and movably positioned at predetermined distance above the substrate 104. The proof mass 102 includes a plurality of electrode protrusions 116 extending downward from the proof mass to form a gap of varying height between the proof mass and the substrate. The proof mass 102 is configured to move in a direction parallel to the upper surfaces of each of the plurality of substrate electrodes 108, 110 when the object is accelerating, which results in a change in the area of the gap, and a change in capacitance between the substrate and the proof mass. The in-plane accelerometer can be fabricated using the same techniques used to fabricate an out-of-plane accelerometer and is suitable for high-shock applications.

    Abstract translation: 要解决的问题:提供一种非常坚固和高性能的三轴加速度计,其包括通过使用MEMS制造技术在单个芯片上制造的面内加速度计和面外加速度计。 解决方案:加速度计的结构包括具有刚性地附接到物体的基板的面内加速度计,以及由整体模制的材料形成的可移动地定位在基板104上方的预定距离处的检验质量块102.检验质量 102包括从检验质量块向下延伸的多个电极突起116,以在检验质量块和衬底之间形成不同高度的间隙。 检测质量体102被配置为在物体加速时平行于多个基板电极108,110中的每一个的上表面的方向移动,这导致间隙的面积的变化和电容的变化 在基板和检验质量之间。 平面内加速度计可以使用与制造平面外加速度计相同的技术制造,适用于高冲击应用。 版权所有(C)2012,JPO&INPIT

    Micro mirror array and microstructure having solderable connection site
    5.
    发明专利
    Micro mirror array and microstructure having solderable connection site 审中-公开
    MICRO镜像阵列和具有可焊连接点的微结构

    公开(公告)号:JP2005062881A

    公开(公告)日:2005-03-10

    申请号:JP2004235666

    申请日:2004-07-15

    CPC classification number: B81C1/0023 B81B2201/042 G02B26/0841

    Abstract: PROBLEM TO BE SOLVED: To provide a microstructure system or mirror array. SOLUTION: A micro mirror array includes an upper wafer portion having a plurality of movable reflective surfaces and defining a coverage area in top view. The array further includes a lower wafer portion located generally below the upper wafer portion and coupled thereto. The lower wafer portion includes at least one connection site located thereon, and at least one connection site is electrically or operatively coupled to at least one component which can control the movement of at least one of the reflective surfaces. The at least one connection site is not generally located within the coverage area of the upper wafer portion. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题:提供微结构体系或反射镜阵列。 解决方案:微反射镜阵列包括具有多个可移动反射表面并在顶视图中限定覆盖区域的上晶片部分。 该阵列还包括下部晶片部分,该下部晶片部分大致位于上部晶片部分的下方并与之连接。 下晶片部分包括位于其上的至少一个连接部位,并且至少一个连接部位电连接或可操作地耦合到至少一个可控制至少一个反射表面的部件的组件。 至少一个连接位置通常不位于上晶片部分的覆盖区域内。 版权所有(C)2005,JPO&NCIPI

    Pressure sensor
    6.
    发明专利
    Pressure sensor 审中-公开
    压力传感器

    公开(公告)号:JP2006098408A

    公开(公告)日:2006-04-13

    申请号:JP2005311910

    申请日:2005-09-28

    Abstract: PROBLEM TO BE SOLVED: To provide a pressure sensor that utilizes improved heat-resistant detecting materials. SOLUTION: The pressure sensor (10) includes a movable component (16) that is configured to move, when the pressure sensor is exposed to differential pressure thereacross, and a pressure-sensing component (20) located on the movable component. The pressure-sensing component includes an electrically conductive electron gas which changes its electrical resistance thereacross, upon the movement of the movable component. The pressure sensor is configured, such that leads can be coupled to the pressure sensing component and the pressure sensing component can output a signal via the leads. The signal is related to pressure to which the pressure sensor is exposed. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:提供使用改进的耐热检测材料的压力传感器。 解决方案:压力传感器(10)包括可移动部件(16),其构造成当压力传感器暴露于其间的差压时以及位于可移动部件上的压力感测部件(20)移动。 压力感测部件包括导电电子气体,其在可移动部件移动时改变其电阻。 压力传感器被配置为使得引线可以耦合到压力感测部件,并且压力感测部件可以经由引线输出信号。 该信号与压力传感器暴露于的压力有关。 版权所有(C)2006,JPO&NCIPI

    MICRO MIRROR STRUCTURE WITH FLAT REFLECTIVE COATING
    7.
    发明申请
    MICRO MIRROR STRUCTURE WITH FLAT REFLECTIVE COATING 审中-公开
    具有平面反射涂层的微型镜面结构

    公开(公告)号:WO2004029692A3

    公开(公告)日:2004-05-21

    申请号:PCT/US0329076

    申请日:2003-09-16

    Abstract: A micro mirror structure including a plurality of individually movable mirrors. Each mirror has a generally concave shape from a top perspective at a temperature of about 20 degrees Celsius and has a generally convex shape from a top perspective at a temperature of about 85 degrees Celsius. In one embodiment, the radius of curvature may be greater than about 500 mm at a temperature of about 20 degrees Celsius and may be less than about -600 mm at a temperature of about 85 degrees Celsius at a thickness of about 10 microns. In another embodiment, the invention is a micro mirror structure including a plurality of individually movable mirrors arranged in an array. Each mirror includes a substrate, a diffusion barrier layer located above the substrate, and a reflective layer located above the diffusion barrier layer. The diffusion barrier layer generally limits the diffusion of the top reflective layer through the diffusion barrier layer.

    Abstract translation: 一种微镜结构,包括多个可单独移动的镜子。 每个镜子在大约20摄氏度的温度下从顶部视角具有大致凹形的形状,并且在大约85摄氏度的温度下从顶部视角具有大致凸形的形状。 在一个实施例中,曲率半径在约20摄氏度的温度下可以大于约500mm,并且在约10微米的厚度下在约85摄氏度的温度下可以小于约-600mm。 在另一个实施例中,本发明是一种微反射镜结构,其包括以阵列布置的多个单独可移动的反射镜。 每个反射镜包括衬底,位于衬底上方的扩散阻挡层以及位于扩散阻挡层上方的反射层。 扩散阻挡层通常限制顶部反射层通过扩散阻挡层的扩散。

    HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR
    9.
    发明申请
    HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR 审中-公开
    耐高温固体压力传感器

    公开(公告)号:WO2008036701A2

    公开(公告)日:2008-03-27

    申请号:PCT/US2007078831

    申请日:2007-09-19

    Abstract: A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parameter associated with the environment. The sensor means including a single crystal semiconductor material having a thickness of less than about 0.5 microns. The transducer further includes an output contact located on the substrate and in electrical communication with the sensor means. The transducer includes a package having an internal package space and a port for communication with the environment. The package receives the substrate in the internal package space such that the first surface of the substrate is substantially isolated from the environment and the second surface of the substrate is substantially exposed to the environment through the port. The transducer further includes a connecting component coupled to the package and a wire electrically connecting the connecting component and the output contact such that an output of the sensor means can be communicated. An external surface of the wire is substantially platinum, and an external surface of at least one of the output contact and the connecting component is substantially platinum.

    Abstract translation: 一种恶劣环境换能器,包括具有第一表面和第二表面的基底,其中第二表面与环境连通。 换能器包括位于基板上的用于测量与环境有关的参数的装置层传感器装置。 传感器装置包括厚度小于约0.5微米的单晶半导体材料。 换能器还包括位于基板上并与传感器装置电连通的输出触点。 换能器包括具有内部封装空间和用于与环境通信的端口的封装。 该封装件在内部封装空间中容纳衬底,使得衬底的第一表面基本上与环境隔离,并且衬底的第二表面基本上通过端口暴露于环境中。 换能器还包括耦合到封装件的连接部件和将连接部件和输出触头电连接的导线,使得可以传送传感器装置的输出。 导线的外表面基本上是铂,并且输出触点和连接部件中的至少一个的外表面基本上是铂。

    HIGH TEMPERATURE CAPACITIVE STATIC/DYNAMIC PRESSURE SENSORS AND METHODS OF MAKING THE SAME

    公开(公告)号:CA2747472A1

    公开(公告)日:2012-01-30

    申请号:CA2747472

    申请日:2011-07-28

    Inventor: GUO SHUWEN

    Abstract: Disclosed are capacitive pressure probes or sensors for high temperature applications. The capacitive pressure sensors of the present invention include, inter alia, a sapphire diaphragm which is disposed within an interior sensing chamber of the probe housing and has a first electrode formed on a central portion thereof. The central portion of the diaphragm and the first electrode are adapted and configured to deflect in response to pressure variations encountered within an interior sensing chamber and by the pressure sensor. A sapphire substrate which has a second electrode formed thereon is fused to the sapphire diaphragm about its periphery to form a sapphire stack and to define a reference chamber therebetween. Prior to fusing the sapphire diaphragm to the sapphire substrate, all contact surfaces are chemically treated and prepared using plasma activation, so as to create a bonding layer and to reduce the temperature required for the fusion.

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