METHOD FOR FORMING A PLATINUM RESISTANCE THERMOMETER

    公开(公告)号:CA1258981A

    公开(公告)日:1989-09-05

    申请号:CA487788

    申请日:1985-07-30

    Applicant: ROSEMOUNT INC

    Abstract: METHOD FOR FORMING A PLATINUM RESISTANCE THERMOMETER A platinum resistance thermometer is formed in a process which includes the defining of a path for the resistance thermometer in an inert material deposited in a layer on the substrate. The substrate surface is exposed in the path, and the inert material forms a negative pattern for the path. The resistive material for the thermometer is then deposited on both the substrate surface exposed in the path and on the surfaces of the inert material remaining on the substrate. After this, the inert material is etched away, and the resistive material deposited on top of the inert material is then loose and can be removed leaving a strip of resistive material in the desired path for forming the resistive thermometer. The strip has low contamination and impurities to more easily reach the desired temperature coefficent of resistance of the strip forming the thermometer.

    PLATINUM RESISTANCE THERMOMETER
    6.
    发明专利

    公开(公告)号:CA1250155A

    公开(公告)日:1989-02-21

    申请号:CA487789

    申请日:1985-07-30

    Applicant: ROSEMOUNT INC

    Abstract: PLATINUM RESISTANCE THERMOMETER A platinum resistance thermometer is formed in a process which includes the defining of a path for the resistance thermometer in an inert material deposited in a layer on the substrate. The substrate surface is exposed in the path, and the inert material forms a negative pattern for the path. The resistive material for the thermometer is then deposited on both the substrate surface exposed in the path and on the surfaces of the inert material remaining on the substrate. After this, the inert material is etched away, and the resistive material deposited on top of the inert material is then loose and can be removed leaving a strip of resistive material in the desired path for forming the resistive thermometer. The strip has low contamination and impurities to more easily reach the desired temperature coefficent of resistance of the strip forming the thermometer.

    INTEGRATED SEMICONDUCTOR RESISTANCE TEMPERATURE AND RESISTIVE HEATER

    公开(公告)号:CA1272517A

    公开(公告)日:1990-08-07

    申请号:CA538751

    申请日:1987-06-03

    Applicant: ROSEMOUNT INC

    Abstract: An integrated sensing device includes a resistance temperature sensor formed in a semiconductor substrate and a resistance heater which is formed on an insulating layer which covers the surface of the semiconductor substrate. The resistance heater has a low temperature coefficient of resistivity and is positioned adjacent the resistance temperature sensor so the current flow through the resistance heater will generate heat which is transferred through the insulating layer to the resistance temperature sensor. The sensing device is applicable to a variety of sensing systems, such as mass flow measurement systems, dew point detection systems, and frost detection systems.

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