1.
    发明专利
    未知

    公开(公告)号:DE60023688D1

    公开(公告)日:2005-12-08

    申请号:DE60023688

    申请日:2000-05-11

    Applicant: ROSEMOUNT INC

    Inventor: FRICK L RUD E BRODEN A

    Abstract: The cavities in a cell casing have silicone oil adapted to receive pressure and exert corresponding force on diaphragm. The diaphragm is deflected based on difference in received pressure. Electrodes defining variable capacitors are coupled to center and edges of interior wall and coupled to conductive portion of diaphragm. The cell casing has interior walls with edge surrounding center region and defining a cavity, portioned by deflectable diaphragm arranged between interior walls. Independent claims are also included for the following: (a) process pressure transmitter; (b) differential pressure measuring method; (c) error compensating method in measuring differential pressure.

    3.
    发明专利
    未知

    公开(公告)号:DE60023688T2

    公开(公告)日:2006-07-20

    申请号:DE60023688

    申请日:2000-05-11

    Applicant: ROSEMOUNT INC

    Inventor: FRICK L RUD E BRODEN A

    Abstract: The cavities in a cell casing have silicone oil adapted to receive pressure and exert corresponding force on diaphragm. The diaphragm is deflected based on difference in received pressure. Electrodes defining variable capacitors are coupled to center and edges of interior wall and coupled to conductive portion of diaphragm. The cell casing has interior walls with edge surrounding center region and defining a cavity, portioned by deflectable diaphragm arranged between interior walls. Independent claims are also included for the following: (a) process pressure transmitter; (b) differential pressure measuring method; (c) error compensating method in measuring differential pressure.

    5.
    发明专利
    未知

    公开(公告)号:DE60019126D1

    公开(公告)日:2005-05-04

    申请号:DE60019126

    申请日:2000-08-07

    Applicant: ROSEMOUNT INC

    Abstract: A pressure transmitter with first and second absolute pressure sensors receives process pressures from corresponding first and second process inlets. A transmitter circuit coupled to the first and second absolute pressure sensors generates a differential pressure type output. A third absolute pressure sensor coupled to the transmitter circuit receives atmospheric pressure from a third inlet. The transmitter circuit generates a second type of transmitter output that can be a gage or absolute pressure type. Single crystal. sapphire pressure sensors are preferred to provide enough accuracy for measuring accurately over 200:1 pressure range.

    6.
    发明专利
    未知

    公开(公告)号:DE60108217D1

    公开(公告)日:2005-02-10

    申请号:DE60108217

    申请日:2001-01-05

    Applicant: ROSEMOUNT INC

    Abstract: A sensor has an electrical interconnect grown in a cavity between first and second layers that are bonded together. Electrically conductive grain growth material is selectively deposited on at least one of two electrically conductive film interconnect regions that face one another across the cavity. The grain growth material is then grown upon predetermined conditions to form the electrical interconnect between the two interconnect regions. A sensor element deposited in the cavity is electrically coupled between the layers by the interconnect. The grain growth material can be tantalum that is heated after the layers are bonded to grow grains that interconnect the electrically conductive films.

    7.
    发明专利
    未知

    公开(公告)号:DE60019126T2

    公开(公告)日:2006-02-16

    申请号:DE60019126

    申请日:2000-08-07

    Applicant: ROSEMOUNT INC

    Abstract: A pressure transmitter with first and second absolute pressure sensors receives process pressures from corresponding first and second process inlets. A transmitter circuit coupled to the first and second absolute pressure sensors generates a differential pressure type output. A third absolute pressure sensor coupled to the transmitter circuit receives atmospheric pressure from a third inlet. The transmitter circuit generates a second type of transmitter output that can be a gage or absolute pressure type. Single crystal. sapphire pressure sensors are preferred to provide enough accuracy for measuring accurately over 200:1 pressure range.

    8.
    发明专利
    未知

    公开(公告)号:DE60108217T2

    公开(公告)日:2005-12-29

    申请号:DE60108217

    申请日:2001-01-05

    Applicant: ROSEMOUNT INC

    Abstract: A sensor has an electrical interconnect grown in a cavity between first and second layers that are bonded together. Electrically conductive grain growth material is selectively deposited on at least one of two electrically conductive film interconnect regions that face one another across the cavity. The grain growth material is then grown upon predetermined conditions to form the electrical interconnect between the two interconnect regions. A sensor element deposited in the cavity is electrically coupled between the layers by the interconnect. The grain growth material can be tantalum that is heated after the layers are bonded to grow grains that interconnect the electrically conductive films.

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