Abstract:
An illumination optics for EUV microlithography illuminates an object field with the aid of an EUV used radiation beam. Preset devices preset illumination parameters. An illumination correction device corrects the intensity distribution and/or the angular distribution of the object field illumination. The latter has an optical component to which the used radiation beam is at least partially applied upstream of the object field and which can be driven in a controlled manner. A detector acquires one of the illumination parameters. An evaluation device evaluates the detector data and converts the latter into control signals. At least one actuator displaces the optical component. During exposures, the actuators are controlled with the aid of the detector signals during the period of a projection exposure. A maximum displacement of below 8 μm is ensured for edges of the object field towards an object to be exposed. The result is an illumination optics that is used to ensure conformance with preset illumination parameters even given the most stringent demands upon precision.
Abstract:
Collectors with mirror shells arranged inside each other, illumination systems equipped with such collectors, projection exposure apparatuses equipped with such illumination systems, methods of manufacturing microelectronic components with such projection exposure apparatuses, and related systems, components and methods are disclosed.
Abstract:
Collectors with mirror shells arranged inside each other, illumination systems equipped with such collectors, projection exposure apparatuses equipped with such illumination systems, methods of manufacturing microelectronic components with such projection exposure apparatuses, and related systems, components and methods are disclosed.
Abstract:
An illumination optics for EUV microlithography guides an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1. A field facet mirror has a plurality of field facets that set defined illumination conditions in the object field. A following optics downstream of the field facet mirror transmits the illumination light into the object field. The following optics includes a pupil facet mirror with a plurality of pupil facets. The field facets are in each case individually allocated to the pupil facets so that portions of the illumination light bundle impinging upon in each case one of the field facets are guided on to the object field via the associated pupil facet. The field facet mirror not only includes a plurality of basic illumination field facets which provide a basic illumination of the object field via associated basic illumination pupil facets, but also includes a plurality of correction illumination field facets which provide for a correction of the illumination of the object field via associated correction illumination pupil facets. The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.
Abstract:
Illumination optics for EUV microlithography guide an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1.
Abstract:
There is provided an illumination system for microlithography. The illumination system includes an optical element having a plurality of field raster elements, a plane in which a field is illuminated, and a grazing incidence mirror situated in a light path from the optical element to the plane, after the optical element. The illumination system has no other grazing incidence mirror in the light path, after the optical element and before the plane.
Abstract:
There is provided an EUV optical projection system. The system includes a first mirror, a second mirror, a third mirror, a fourth mirror, a fifth mirror, and a sixth mirror situated in an optical path from an object plane to an image plane, for imaging an object in said object plane into an image in said image plane. The image has a width W and a secant length SL, and the width W is greater than about 2 mm.
Abstract:
An EUV optical projection system includes at least six reflecting surfaces for imaging an object (OB) on an image (IM). The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a secondary mirror (M2) and a tertiary mirror (M3), such that a primary mirror (M1) and the secondary mirror (M2) form a first optical group (G1) and the tertiary mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G2). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the primary mirror (M1) and the secondary mirror (M2). The secondary mirror (M2) is preferably concave, and the tertiary mirror (M3) is preferably convex. Each of the six reflecting surfaces preferably receives a chief ray (CR) from a central field point at an incidence angle of less than substantially 15°. The system preferably has a numerical aperture greater than 0.18 at the image (IM). The system is preferably configured such that a chief ray (CR) converges toward the optical axis (OA) while propagating between the secondary mirror (M2) and the tertiary mirror (M3).
Abstract:
There is provided an EUV optical projection system. The system includes a first mirror, a second mirror, a third mirror, a fourth mirror, a fifth mirror, and a sixth mirror situated in an optical path from an object plane to an image plane, for imaging an object in said object plane into an image in said image plane. The image has a width W and a secant length SL, and the width W is greater than about 2 mm.
Abstract:
An EUV optical projection system includes at least six mirrors (M1, M2, M3, M4, M5, M6) for imaging an object (OB) to an image (IM). At least one mirror pair is preferably configured as an at least phase compensating mirror pair. The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a second mirror (M2) and a third mirror (M3), such that a first mirror (M1) and the second mirror (M2) form a first optical group (G1) and the third mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G1). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the first mirror (M1) and the second mirror (M2). The second mirror (M2) is preferably convex, and the third mirror (M3) is preferably concave. The system preferably forms an image (IM) with a numerical aperture greater than 0.18.