ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY
    1.
    发明申请
    ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY 审中-公开
    EUV微观光谱的照明光学

    公开(公告)号:US20110235015A1

    公开(公告)日:2011-09-29

    申请号:US13076730

    申请日:2011-03-31

    CPC classification number: G03F7/7085 G03F7/70141 G03F7/702 G03F7/70558

    Abstract: An illumination optics for EUV microlithography illuminates an object field with the aid of an EUV used radiation beam. Preset devices preset illumination parameters. An illumination correction device corrects the intensity distribution and/or the angular distribution of the object field illumination. The latter has an optical component to which the used radiation beam is at least partially applied upstream of the object field and which can be driven in a controlled manner. A detector acquires one of the illumination parameters. An evaluation device evaluates the detector data and converts the latter into control signals. At least one actuator displaces the optical component. During exposures, the actuators are controlled with the aid of the detector signals during the period of a projection exposure. A maximum displacement of below 8 μm is ensured for edges of the object field towards an object to be exposed. The result is an illumination optics that is used to ensure conformance with preset illumination parameters even given the most stringent demands upon precision.

    Abstract translation: 用于EUV微光刻的照明光学器件借助EUV使用的辐射束照亮物体场。 预设设备预设照明参数。 照明校正装置校正物场照明的强度分布和/或角分布。 后者具有光学部件,使用的辐射束至少部分地施加在物场的上游,并且可以以受控的方式驱动。 检测器获取照明参数之一。 评估装置评估检测器数据并将其转换成控制信号。 至少一个致动器移动光学部件。 在曝光期间,在投影曝光期间借助于检测器信号来控制致动器。 确保物体边缘朝向待曝光物体的8μm以下的最大位移。 结果是一个照明光学器件,用于确保符合预设的照明参数,即使在最严格的精度要求下。

    COLLECTOR FOR AN ILLUMINATION SYSTEM
    2.
    发明申请
    COLLECTOR FOR AN ILLUMINATION SYSTEM 有权
    收集器用于照明系统

    公开(公告)号:US20080018876A1

    公开(公告)日:2008-01-24

    申请号:US11781010

    申请日:2007-07-20

    CPC classification number: G21K1/06 B82Y10/00 G02B2207/123 G03F7/70166

    Abstract: Collectors with mirror shells arranged inside each other, illumination systems equipped with such collectors, projection exposure apparatuses equipped with such illumination systems, methods of manufacturing microelectronic components with such projection exposure apparatuses, and related systems, components and methods are disclosed.

    Abstract translation: 公开了具有彼此布置的具有镜壳的收集器,配备有这种收集器的照明系统,配备有这种照明系统的投影曝光装置,具有这种投影曝光装置的微电子部件的制造方法以及相关系统,部件和方法。

    Collector for an illumination system
    3.
    发明授权
    Collector for an illumination system 有权
    收集器用于照明系统

    公开(公告)号:US07910900B2

    公开(公告)日:2011-03-22

    申请号:US11781010

    申请日:2007-07-20

    CPC classification number: G21K1/06 B82Y10/00 G02B2207/123 G03F7/70166

    Abstract: Collectors with mirror shells arranged inside each other, illumination systems equipped with such collectors, projection exposure apparatuses equipped with such illumination systems, methods of manufacturing microelectronic components with such projection exposure apparatuses, and related systems, components and methods are disclosed.

    Abstract translation: 公开了具有彼此布置的具有镜壳的收集器,配备有这种收集器的照明系统,配备有这种照明系统的投影曝光装置,具有这种投影曝光装置的微电子部件的制造方法以及相关系统,部件和方法。

    ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND RELATED SYSTEM AND APPARATUS
    4.
    发明申请
    ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND RELATED SYSTEM AND APPARATUS 有权
    EUV微观照相和相关系统和装置的照明光学

    公开(公告)号:US20110063598A1

    公开(公告)日:2011-03-17

    申请号:US12915785

    申请日:2010-10-29

    CPC classification number: G03F7/70191 G03F7/70083

    Abstract: An illumination optics for EUV microlithography guides an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1. A field facet mirror has a plurality of field facets that set defined illumination conditions in the object field. A following optics downstream of the field facet mirror transmits the illumination light into the object field. The following optics includes a pupil facet mirror with a plurality of pupil facets. The field facets are in each case individually allocated to the pupil facets so that portions of the illumination light bundle impinging upon in each case one of the field facets are guided on to the object field via the associated pupil facet. The field facet mirror not only includes a plurality of basic illumination field facets which provide a basic illumination of the object field via associated basic illumination pupil facets, but also includes a plurality of correction illumination field facets which provide for a correction of the illumination of the object field via associated correction illumination pupil facets. The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.

    Abstract translation: 用于EUV微光刻的照明光学器件将照射光束从辐射源引导到物场,其具有在较大场尺寸和较短场尺寸之间的延伸比,其中该比率远大于1.场分面镜具有多个 的场面在场景中设置定义的照明条件。 在场面反射镜下游的以下光学器件将照明光透射到物体场中。 以下光学器件包括具有多个光瞳面的光瞳小面镜。 场分面在每种情况下分别被分配给光瞳面,使得在各种情况下照射的照明光束的一部分通过相关联的光瞳小面被引导到物场。 场面镜不仅包括多个基本照明场面,它们通过相关联的基本照明光瞳面提供物场的基本照明,而且还包括多个校正照明场面,其提供对照射的照明的校正 通过相关联的校正照明光瞳面进行物体场。 结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化,例如照明强度分布或照明角度分布。

    Projection system for EUV lithography
    7.
    发明授权
    Projection system for EUV lithography 有权
    EUV光刻投影系统

    公开(公告)号:US07375798B2

    公开(公告)日:2008-05-20

    申请号:US11657420

    申请日:2007-01-24

    Abstract: There is provided an EUV optical projection system. The system includes a first mirror, a second mirror, a third mirror, a fourth mirror, a fifth mirror, and a sixth mirror situated in an optical path from an object plane to an image plane, for imaging an object in said object plane into an image in said image plane. The image has a width W and a secant length SL, and the width W is greater than about 2 mm.

    Abstract translation: 提供了一个EUV光学投影系统。 该系统包括位于从物平面到像平面的光路中的第一镜,第二镜,第三镜,第四镜,第五镜和第六镜,用于将所述物平面中的物体成像成 所述图像平面中的图像。 图像具有宽度W和割线长度SL,宽度W大于约2mm。

    Projection system for EUV lithography
    8.
    发明授权
    Projection system for EUV lithography 有权
    EUV光刻投影系统

    公开(公告)号:US07355678B2

    公开(公告)日:2008-04-08

    申请号:US11243407

    申请日:2005-10-04

    Abstract: An EUV optical projection system includes at least six reflecting surfaces for imaging an object (OB) on an image (IM). The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a secondary mirror (M2) and a tertiary mirror (M3), such that a primary mirror (M1) and the secondary mirror (M2) form a first optical group (G1) and the tertiary mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G2). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the primary mirror (M1) and the secondary mirror (M2). The secondary mirror (M2) is preferably concave, and the tertiary mirror (M3) is preferably convex. Each of the six reflecting surfaces preferably receives a chief ray (CR) from a central field point at an incidence angle of less than substantially 15°. The system preferably has a numerical aperture greater than 0.18 at the image (IM). The system is preferably configured such that a chief ray (CR) converges toward the optical axis (OA) while propagating between the secondary mirror (M2) and the tertiary mirror (M3).

    Abstract translation: EUV光学投影系统包括用于对图像(IM)上的物体(OB)进行成像的至少六个反射表面。 该系统优选地配置成沿着从物体(OB)到次级反射镜(M 2)和第三反射镜(M 3)之间的图像(IM)的光路形成中间图像(IMI),使得主 反射镜(M 1)和副镜(M 2)形成第一光学组(G 1)和第三反射镜(M 3),第四反射镜(M 4),第五反射镜(M5)和第六反射镜 (M 6)形成第二光学组(G 2)。 该系统还优选地包括沿着从物体(OB)到主镜(M 1)和副镜(M 2)之间的图像(IM)的光路定位的孔径光阑(APE)。 副镜(M 2)优选为凹面,第三反射镜(M 3)优选为凸面。 六个反射表面中的每一个优选地以小于大约15°的入射角从中心场点接收主光线(CR)。 该系统优选地在图像(IM)处具有大于0.18的数值孔径。 优选地,该系统构造成使得主光线(CR)在副反射镜(M 2)和第三反射镜(M 3)之间传播的同时朝向光轴(OA)会聚。

    Projection system for EUV lithograhphy
    9.
    发明申请
    Projection system for EUV lithograhphy 有权
    EUV光刻投影系统

    公开(公告)号:US20070153252A1

    公开(公告)日:2007-07-05

    申请号:US11657420

    申请日:2007-01-24

    Abstract: There is provided an EUV optical projection system. The system includes a first mirror, a second mirror, a third mirror, a fourth mirror, a fifth mirror, and a sixth mirror situated in an optical path from an object plane to an image plane, for imaging an object in said object plane into an image in said image plane. The image has a width W and a secant length SL, and the width W is greater than about 2 mm.

    Abstract translation: 提供了一个EUV光学投影系统。 该系统包括位于从物平面到像平面的光路中的第一镜,第二镜,第三镜,第四镜,第五镜和第六镜,用于将所述物平面中的物体成像成 所述图像平面中的图像。 图像具有宽度W和割线长度SL,宽度W大于约2mm。

    Projection system for EUV lithography
    10.
    发明申请
    Projection system for EUV lithography 审中-公开
    EUV光刻投影系统

    公开(公告)号:US20070070322A1

    公开(公告)日:2007-03-29

    申请号:US11604997

    申请日:2006-11-28

    CPC classification number: G03F7/70233 G02B17/0652 G02B17/0657 G03F7/70275

    Abstract: An EUV optical projection system includes at least six mirrors (M1, M2, M3, M4, M5, M6) for imaging an object (OB) to an image (IM). At least one mirror pair is preferably configured as an at least phase compensating mirror pair. The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a second mirror (M2) and a third mirror (M3), such that a first mirror (M1) and the second mirror (M2) form a first optical group (G1) and the third mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G1). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the first mirror (M1) and the second mirror (M2). The second mirror (M2) is preferably convex, and the third mirror (M3) is preferably concave. The system preferably forms an image (IM) with a numerical aperture greater than 0.18.

    Abstract translation: EUV光学投影系统包括用于将物体(OB)成像到图像(IM)的至少六个反射镜(M 1,M 2,M 3,M 4,M 5,M 6)。 优选地,至少一个镜对配置为至少相位补偿镜对。 该系统优选地被配置成沿着从物体(OB)到第二反射镜(M 2)和第三反射镜(M 3)之间的图像(IM))的光路形成中间图像(IMI),使得第一 反射镜(M 1)和第二反射镜(M 2)形成第一光学组(G 1)和第三反射镜(M 3),第四反射镜(M 4),第五反射镜(M5)和第六反射镜 (M 6)形成第二光学组(G 1)。 该系统还优选地包括沿着从物体(OB)到第一反射镜(M 1)和第二反射镜(M 2)之间的图像(IM))的光路定位的孔径光阑(APE)。 第二镜(M 2)优选为凸面,第三镜(M 3)优选为凹面。 该系统优选地形成数值孔径大于0.18的图像(IM)。

Patent Agency Ranking