公开(公告)号：EP1748488A1

公开(公告)日：2007-01-31

申请号：EP05737197.3

申请日：2005-05-09

Applicant: Renesas Technology Corp.

Inventor： Matsui, Y., Hitachi, Ltd., Central Res. Lab. ,  Matsuzaki, N., Hitachi, Ltd., Central Res. Lab. ,  Takaura, N., Hitachi, Ltd., Central Research Lab. ,  Yamamoto, N., Hitachi, Ltd., Central Research Lab. ,  Matsuoka, H., Hitachi, Ltd., Centr. Res. Lab. ,  Iwasaki, T., Mech. Eng. Res. Lab., Hitachi, Ltd.

IPC: H01L27/10 ,  H01L45/00

CPC classification number: H01L45/06 ,  H01L27/2436 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

Abstract: Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory.
According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

Abstract translation: 由于该材料对高熔点金属和氧化硅膜的粘附性低，所以相变存储器的制造工艺遭受硫属化物材料易于分层的问题。 此外，硫属化物材料具有低热稳定性，因此在相变存储器的制造过程中倾向于升华。 根据本发明，在硫属化物材料层之上和之下形成导电或绝缘粘合层以增强其脱层强度。 此外，在硫属化物材料层的侧壁上形成由氮化物膜构成的保护膜，以防止硫属化物材料层的升华。