Simulator for a chemical mechanical polishing
    1.
    发明申请
    Simulator for a chemical mechanical polishing 有权
    模拟机用于化学机械抛光

    公开(公告)号:US20040167755A1

    公开(公告)日:2004-08-26

    申请号:US10630775

    申请日:2003-07-31

    Inventor: Kazuya Kamon

    Abstract: A simulator is provided which can simulate in consideration of various parameters in a CMP process. A pattern density two-dimensional distribution calculating part takes a pattern density two-dimensional distribution image. A mesh adjusting part performs a mesh adjustment of a measured data. A height distribution calculating part calculates a height distribution based on the pattern density two-dimensional distribution image. A correlation coefficient calculating part calculates a correlation coefficient by performing a least squares analysis of a measured data and a height distribution data. Passing through a Fourier calculation part, spatial filter part, and reverse Fourier calculating part, the pattern density two-dimensional distribution image becomes a pattern density two-dimensional distribution image. This distribution image further passes through a height distribution calculating part, resulting in a height distribution data. The correlation coefficient calculating part calculates a correlation coefficient by performing a least squares analysis of the height distribution data and measured data after CMP process.

    Abstract translation: 提供了可以在CMP过程中考虑各种参数来模拟的模拟器。 图案密度二维分布计算部分采用图案密度二维分布图像。 网格调整部分执行测量数据的网格调整。 高度分布计算部分基于图案密度二维分布图像来计算高度分布。 相关系数计算部分通过对测量数据和高度分布数据进行最小平方分析来计算相关系数。 通过傅里叶计算部分,空间滤波器部分和反傅立叶计算部分,图案密度二维分布图像变为图案密度二维分布图像。 该分布图像进一步通过高度分布计算部,得到高度分布数据。 相关系数计算部通过对CMP处理后的高度分布数据和测量数据进行最小二乘法分析来计算相关系数。

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