公开(公告)号：EP2051370A3

公开(公告)日：2010-06-09

申请号：EP08253219.3

申请日：2008-10-02

Applicant: Renesas Technology Corp.

Inventor： Shimamoto, Kenichi ,  Namie, Hisanori

IPC: H03F1/02

CPC classification number: H03F1/0216 ,  H03F3/24 ,  H03F2200/408 ,  H03F2200/451 ,  H03F2200/504 ,  H03F2200/78

Abstract: The RF power amplifier apparatus has an RF power amplifier (RFPA) and a power-supply circuit (Pwr_Cnt). The power-supply circuit controls the level of a source voltage (V LDO ) supplied to the RF power amplifier in response to the level of a power-control signal (Vapc). A sensing resistance (Rsen) produces a sense signal (Vsen) corresponding to a source current (I LDO ) with respect to a source voltage. A current-control unit (Cmp1,Cmp2,FF1,NAND3 and Qp4) controls the source current (I LDO ) in response to the sense signal (Vsen). When Vsen coincides with an allowable sense signal level (Vsh) corresponding to a source current allowable level I LDO (Max), the current-control unit controls the source current (I LDO ) to a limit current smaller than the allowable level I LDO (Max). Preferably, the limit current is a shutdown current when a shutdown switch is in OFF state. Thus, the drain of the battery of a mobile-phone terminal can be reduced even when an impedance mismatch condition lasts for a long time.

公开(公告)号：EP2051370A2

公开(公告)日：2009-04-22

申请号：EP08253219.3

申请日：2008-10-02

Applicant: Renesas Technology Corp.

Inventor： Shimamoto, Kenichi ,  Namie, Hisanori

IPC: H03F1/02

CPC classification number: H03F1/0216 ,  H03F3/24 ,  H03F2200/408 ,  H03F2200/451 ,  H03F2200/504 ,  H03F2200/78

Abstract: The RF power amplifier apparatus has an RF power amplifier (RFPA) and a power-supply circuit (Pwr_Cnt). The power-supply circuit controls the level of a source voltage (V LDO ) supplied to the RF power amplifier in response to the level of a power-control signal (Vapc). A sensing resistance (Rsen) produces a sense signal (Vsen) corresponding to a source current (I LDO ) with respect to a source voltage. A current-control unit (Cmp1,Cmp2,FF1,NAND3 and Qp4) controls the source current (I LDO ) in response to the sense signal (Vsen). When Vsen coincides with an allowable sense signal level (Vsh) corresponding to a source current allowable level I LDO (Max), the current-control unit controls the source current (I LDO ) to a limit current smaller than the allowable level I LDO (Max). Preferably, the limit current is a shutdown current when a shutdown switch is in OFF state. Thus, the drain of the battery of a mobile-phone terminal can be reduced even when an impedance mismatch condition lasts for a long time.

Abstract translation: 所述RF功率放大装置具有RF功率（RFPA）和电源供给电路（Pwr_Cnt）的放大器。 电源电路控制响应于功率控制信号（VAPC）的电平供给到RF功率放大器的电源电压（V LDO）的电平。 感测电阻（器Rsen）产生相对于源极电压对应于源电流（I LDO）的感测信号（Vsen要）。 一种电流控制单元（CMP 1，器Cmp2，FF1，NAND3和QP4）控制，响应于所述感测信号（Vsen要）的源极电流（I LDO）。 当Vsen要与允许检测信号电平一致（VSH）对应于源电流的允许电平I LDO（最大值）时，电流控制单元控制所述源极电流（I LDO）的限制电流比容许水平I LDO较小（ 最大）。 优选地，限制电流为关断电流关断时的开关处于OFF状态。 因此，移动电话终端的电池的漏极可以即使当阻抗失配状态持续了很长的时间被减少。