公开(公告)号：EP2131492A1

公开(公告)日：2009-12-09

申请号：EP07850860.3

申请日：2007-12-19

Applicant: Renesas Technology Corp.

Inventor： OHNISHI, Masami ,  TANAKA, Satoshi ,  TANAKA, Ryouichi

IPC: H03F3/195 ,  H03F3/16 ,  H03F3/60

CPC classification number: H03F3/195 ,  H03F1/0272 ,  H03F1/565 ,  H03F3/245 ,  H03F3/601 ,  H03F3/602 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/108 ,  H03F2200/111 ,  H03F2200/18 ,  H03F2200/207 ,  H03F2200/255 ,  H03F2200/294 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/456 ,  H03F2200/462 ,  H03F2200/465 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2203/7206 ,  H03F2203/7209

Abstract: An RF amplification device comprises amplification elements Q11 and Q12 which amplify a radio frequency input signal Pin_LB in wireless radio communication, and transmission line transformers TLT11, TLT12, coupled to one of an input electrode and an output electrode of the amplification element. The TLT11, TLT12 comprise a main line Lout arranged between the input and the output, and a sub line Lin1 arranged between an AC ground point and one of the input and the output and coupled to the main line Lout. By applying an operating voltage Vdd different from the ground voltage level GND to the AC ground point, the operating voltage Vdd is supplied to the output electrodes of the amplification elements Q11, Q12 via the sub line Lin from the AC ground point. In realizing a high-performance load circuit in an RF amplification device, it is possible to avoid increase of a module height of an RF module, and at the same time, to avoid increase of an occupied area of a load circuit of a high-frequency amplifier which is formed over a semiconductor chip or a multilayer wiring circuit substrate.

Abstract translation: RF放大装置包括放大无线电通信中的射频输入信号Pin_LB的放大元件Q11和Q12以及耦合到放大元件的输入电极和输出电极之一的传输线变压器TLT11，TLT12。 TLT11，TLT12包括布置在输入和输出之间的主线路由，以及布置在交流地线点与输入和输出之一并耦合到主线路线路上的子线路Lin1。 通过将与接地电压电平GND不同的工作电压Vdd施加到交流接地点，工作电压Vdd经由子线L​​in从AC接地点提供给放大元件Q11，Q12的输出电极。 为了实现RF放大装置中的高性能负载电路，可以避免RF模块的模块高度的增加，同时，为了避免高压负载电路的占用面积的增加， 频率放大器，其形成在半导体芯片或多层布线电路基板上。