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1.发明公开Method of forming resist pattern and semiconductor device manufactured with the same 审中-公开形成抗蚀剂图案的方法和用其制造的半导体器件
公开(公告)号：EP1975719A2
公开(公告)日：2008-10-01
申请号：EP08005983.5
申请日：2008-03-28
Applicant: Renesas Technology Corp.
Inventor： Ishibashi, Takeo , Terai, Mamoru , Hagiwara, Takuya , Yamaguchi, Atsumi
CPC classification number: G03F7/2041 , G03F7/11 , Y10T428/24835
Abstract: A method of forming a resist pattern through liquid immersion exposure in which exposure is performed such that a liquid film is formed between a substrate for a semiconductor device on which a processed film is formed and an objective lens arranged above the substrate is provided, and the substrate treated with a water-repellent agent solution composed of at least a water-repellent agent and a solvent is exposed to light.
Abstract translation: 一种通过液浸曝光形成抗蚀剂图案的方法，其中进行曝光以使得在形成有处理过的膜的半导体器件用基板和布置在基板上方的物镜之间形成液膜，并且 用至少包含防水剂和溶剂的防水剂溶液处理过的基材暴露于光下。
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2.发明公开Method of forming resist pattern and semiconductor device manufactured with the same 审中-公开Verfahren zur Resiststrukturbildung und damit hergestellte Halbleitervorrichtung
公开(公告)号：EP1975719A3
公开(公告)日：2008-12-24
申请号：EP08005983.5
申请日：2008-03-28
Applicant: Renesas Technology Corp.
Inventor： Ishibashi, Takeo , Terai, Mamoru , Hagiwara, Takuya , Yamaguchi, Atsumi
CPC classification number: G03F7/2041 , G03F7/11 , Y10T428/24835
Abstract: A method of forming a resist pattern through liquid immersion exposure in which exposure is performed such that a liquid film is formed between a substrate for a semiconductor device on which a processed film is formed and an objective lens arranged above the substrate is provided, and the substrate treated with a water-repellent agent solution composed of at least a water-repellent agent and a solvent is exposed to light.
Abstract translation: 提供了一种通过液浸曝光形成抗蚀剂图案的方法，其中进行曝光，使得在其上形成有处理膜的半导体器件的基板和布置在基板上方的物镜之间形成液膜，并且 用至少由拒水剂和溶剂组成的拒水剂溶液处理的基材曝光。
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