FREQUENCY DETECTOR
    1.
    发明公开
    FREQUENCY DETECTOR 审中-公开

    公开(公告)号:EP3796561A1

    公开(公告)日:2021-03-24

    申请号:EP20193565.7

    申请日:2020-08-31

    Abstract: The frequency detector (100) includes a first impedance circuit (110) and a second impedance circuit (120). The first impedance circuit (110) has a first terminal for receiving an input signal (SIG IN ), and a second terminal for outputting a divisional signal (SIG DVS ). The second impedance circuit (120) has a first terminal coupled to the second terminal of the first impedance circuit (110), and a second terminal coupled to a first system voltage terminal (NV1). The frequency response of the first impedance circuit (110) is different from a frequency response of the second impedance circuit (120). The resistance of the first impedance circuit (110), a resistance of the second impedance circuit (120), and the divisional signal (SIG DVS ) change with a frequency of the input signal (SIG IN ).

    POWER DETECTOR WITH ALL TRANSISTORS BEING BIPOLAR JUNCTION TRANSISTORS

    公开(公告)号:EP3709510A3

    公开(公告)日:2020-11-04

    申请号:EP19217298.9

    申请日:2019-12-18

    Abstract: A power detector (10, 10B) has a signal input terminal (Pin), N limiting amplifiers (30A, 30B, 30C, 30D), N rectifiers (40A, 40B, 40C, 40D) and a signal output end. N is an integer greater than 1. The signal input terminal receives an input signal (Si), and the signal output end outputs a detection signal (VPD). The N limiting amplifiers generate N amplified signals (Vop1, Vop2, Vop3, Vop4) according to N attenuated signals (Vinp1, Vinp2, Vinp3, Vinp4) having different attenuation. Each rectifier (40A, 40B, 40C, 40D) receives a corresponding amplified signal and outputs a rectified signal. The detection signal (VPD) is associated with the sum of N rectified signals (Io1, Io2, Io3, Io4) outputted from the N rectifiers (40A, 40B, 40C, 40D), and all transistors of the power detector (10, 10B) are bipolar junction transistors.

    POWER DETECTOR WITH ALL TRANSISTORS BEING BIPOLAR JUNCTION TRANSISTORS

    公开(公告)号:EP3709510A2

    公开(公告)日:2020-09-16

    申请号:EP19217298.9

    申请日:2019-12-18

    Abstract: A power detector (10, 10B) has a signal input terminal (Pin), N limiting amplifiers (30A, 30B, 30C, 30D), N rectifiers (40A, 40B, 40C, 40D) and a signal output end. N is an integer greater than 1. The signal input terminal receives an input signal (Si), and the signal output end outputs a detection signal (VPD). The N limiting amplifiers generate N amplified signals (Vop1, Vop2, Vop3, Vop4) according to N attenuated signals (Vinp1, Vinp2, Vinp3, Vinp4) having different attenuation. Each rectifier (40A, 40B, 40C, 40D) receives a corresponding amplified signal and outputs a rectified signal. The detection signal (VPD) is associated with the sum of N rectified signals (Io1, Io2, Io3, Io4) outputted from the N rectifiers (40A, 40B, 40C, 40D), and all transistors of the power detector (10, 10B) are bipolar junction transistors.

Patent Agency Ranking