Differential pressure sensor
    1.
    发明授权

    公开(公告)号:US11692895B2

    公开(公告)日:2023-07-04

    申请号:US17217234

    申请日:2021-03-30

    Abstract: A differential MEMS pressure sensor includes a topping wafer with a top side and a bottom side, a diaphragm wafer having a top side connected to the bottom side of the topping wafer and a bottom side, and a backing wafer having a top side connected to the bottom side of the diaphragm wafer and a bottom side. The topping wafer includes a first cavity formed in the bottom side of the topping wafer. The diaphragm wafer includes a diaphragm, a second cavity formed in the bottom side of the diaphragm wafer underneath the diaphragm, an outer portion surrounding the diaphragm, and a trench formed in the top side of the diaphragm wafer and positioned in the outer portion surrounding the diaphragm.

    DIFFERENTIAL PRESSURE SENSOR
    2.
    发明申请

    公开(公告)号:US20220316973A1

    公开(公告)日:2022-10-06

    申请号:US17217234

    申请日:2021-03-30

    Abstract: A differential MEMS pressure sensor includes a topping wafer with a top side and a bottom side, a diaphragm wafer having a top side connected to the bottom side of the topping wafer and a bottom side, and a backing wafer having a top side connected to the bottom side of the diaphragm wafer and a bottom side. The topping wafer includes a first cavity formed in the bottom side of the topping wafer. The diaphragm wafer includes a diaphragm, a second cavity formed in the bottom side of the diaphragm wafer underneath the diaphragm, an outer portion surrounding the diaphragm, and a trench formed in the top side of the diaphragm wafer and positioned in the outer portion surrounding the diaphragm.

    MEMS STRAIN GAUGE PRESSURE SENSOR WITH MECHANICAL SYMMETRIES

    公开(公告)号:US20220307929A1

    公开(公告)日:2022-09-29

    申请号:US17216049

    申请日:2021-03-29

    Inventor: Jun Zheng

    Abstract: A microelectromechanical system (MEMS) strain gauge pressure sensor includes a top wafer stack having a top surface and a first cavity that is configured to receive a first fluid at a first pressure, a backing wafer having a bottom surface opposite the top surface of the top wafer stack; a diaphragm wafer positioned between the top wafer stack and the backing wafer and having a second cavity that is configured to receive a second fluid at a second pressure, and a pedestal connected laterally to the top wafer stack, the backing wafer, and the diaphragm wafer. The diaphragm wafer includes a diaphragm extending between the first cavity and the second cavity, and a resistor positioned on the diaphragm. The MEMS strain gauge pressure sensor has a central axis such that the MEMS strain gauge pressure sensor has mechanical symmetries about the central axis.

    High temperature capacitive MEMS pressure sensor

    公开(公告)号:US10823631B2

    公开(公告)日:2020-11-03

    申请号:US15956657

    申请日:2018-04-18

    Inventor: Jun Zheng

    Abstract: A MEMS pressure sensor includes a first plate with a hole on a diaphragm bonded to the first plate around its rim with the diaphragm positioned over the hole. An isolation frame is bonded to the diaphragm and a second plate with a pillar is bonded to the isolation frame around its rim to form a cavity such that the end of the pillar in the cavity is proximate a surface of the diaphragm. The diaphragm and second plate form a capacitive sensor which changes output upon deflection of the diaphragm relative to the second plate.

    HIGH TEMPERATURE CAPACITIVE MEMS PRESSURE SENSOR

    公开(公告)号:US20190323912A1

    公开(公告)日:2019-10-24

    申请号:US15956657

    申请日:2018-04-18

    Inventor: Jun Zheng

    Abstract: A MEMS pressure sensor includes a first plate with a hole on a diaphragm bonded to the first plate around its rim with the diaphragm positioned over the hole. An isolation frame is bonded to the diaphragm and a second plate with a pillar is bonded to the isolation frame around its rim to form a cavity such that the end of the pillar in the cavity is proximate a surface of the diaphragm. The diaphragm and second plate form a capacitive sensor which changes output upon deflection of the diaphragm relative to the second plate.

    MEMS strain gauge pressure sensor with mechanical symmetries

    公开(公告)号:US11879800B2

    公开(公告)日:2024-01-23

    申请号:US17216049

    申请日:2021-03-29

    Inventor: Jun Zheng

    Abstract: A microelectromechanical system (MEMS) strain gauge pressure sensor includes a top wafer stack having a top surface and a first cavity that is configured to receive a first fluid at a first pressure, a backing wafer having a bottom surface opposite the top surface of the top wafer stack; a diaphragm wafer positioned between the top wafer stack and the backing wafer and having a second cavity that is configured to receive a second fluid at a second pressure, and a pedestal connected laterally to the top wafer stack, the backing wafer, and the diaphragm wafer. The diaphragm wafer includes a diaphragm extending between the first cavity and the second cavity, and a resistor positioned on the diaphragm. The MEMS strain gauge pressure sensor has a central axis such that the MEMS strain gauge pressure sensor has mechanical symmetries about the central axis.

    CAPACITIVE MEMS PRESSURE SENSOR AND METHOD OF MANUFACTURE

    公开(公告)号:US20210302253A1

    公开(公告)日:2021-09-30

    申请号:US17180688

    申请日:2021-02-19

    Inventor: Jun Zheng

    Abstract: A method of fabricating a capacitive micromechanical electrical system (MEMS) pressure sensor includes the steps of forming a backing wafer, forming a diaphragm wafer that includes a diaphragm configured to deflect from an applied force and a pressure cavity configured to produce on the diaphragm the applied force which is indicative of a system pressure; fusing the diaphragm wafer to the backing wafer thereby forming a base wafer, forming a top wafer, joining the top wafer to the base wafer, thereby forming a detector wafer. The diaphragm defines a first capacitor surface and the top wafer defines a second capacitor surface. A void separates the second capacitor surface from the first capacitor surface by a separation distance which is a capacitor gap. A capacitive MEMS pressure sensor is also disclosed.

    Capacitive MEMS pressure sensor and method of manufacture

    公开(公告)号:US11573145B2

    公开(公告)日:2023-02-07

    申请号:US17180688

    申请日:2021-02-19

    Inventor: Jun Zheng

    Abstract: A method of fabricating a capacitive micromechanical electrical system (MEMS) pressure sensor includes the steps of forming a backing wafer, forming a diaphragm wafer that includes a diaphragm configured to deflect from an applied force and a pressure cavity configured to produce on the diaphragm the applied force which is indicative of a system pressure; fusing the diaphragm wafer to the backing wafer thereby forming a base wafer, forming a top wafer, joining the top wafer to the base wafer, thereby forming a detector wafer. The diaphragm defines a first capacitor surface and the top wafer defines a second capacitor surface. A void separates the second capacitor surface from the first capacitor surface by a separation distance which is a capacitor gap. A capacitive MEMS pressure sensor is also disclosed.

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