公开(公告)号：WO2011028946A1

公开(公告)日：2011-03-10

申请号：PCT/US2010/047735

申请日：2010-09-02

Applicant: S3C INC. ,  ZHU, Zhineng

Inventor： ZHU, Zhineng

IPC: G05F1/10

CPC classification number: H03L1/022 ,  H03K3/011 ,  H03K3/03 ,  H03K3/354 ,  H03K4/502

Abstract: A temperature compensated CMOS RC oscillator circuit changes the source- bulk voltage to stabilize the MOSFET's threshold voltage variation over temperature using a resistor and temperature-correlated bias current. The MOSFET's source is connected to ground through a resistor. This temperature-correlated bias current also runs through this resistor. When temperature increases, the bias current also increases, which increases the MOSFET's source-bulk voltage. The increased source-bulk voltage helps to stabilize the threshold voltage of MOSFET at high temperature. A power saving logic is also embedded in this oscillator to achieve higher frequency at lower power consumption. In the present invention, there is no high gain op amp or high speed comparator, which makes the resultant oscillator to be low power design and which can be integrated into a single chip with other system.

Abstract translation: 温度补偿CMOS RC振荡器电路使用电阻和温度相关偏置电流来改变源 - 体电压，以稳定MOSFET的温度阈值电压变化。 MOSFET的源极通过电阻连接到地。 该温度相关偏置电流也通过该电阻。 当温度升高时，偏置电流也会增加，从而增加了MOSFET的源 - 体电压。 增加的源体电压有助于在高温下稳定MOSFET的阈值电压。 该振荡器中也嵌入节能逻辑，以在较低的功耗下实现更高的频率。 在本发明中，没有高增益运算放大器或高速比较器，这使得所得到的振荡器具有低功率设计，并且可以与其它系统集成到单个芯片中。

公开(公告)号：EP2473891A1

公开(公告)日：2012-07-11

申请号：EP10814523.6

申请日：2010-09-02

Applicant: S3C, Inc.

Inventor： ZHU, Zhineng

IPC: G05F1/10

CPC classification number: H03L1/022 ,  H03K3/011 ,  H03K3/03 ,  H03K3/354 ,  H03K4/502

Abstract: A temperature compensated CMOS RC oscillator circuit changes the source- bulk voltage to stabilize the MOSFET's threshold voltage variation over temperature using a resistor and temperature-correlated bias current. The MOSFET's source is connected to ground through a resistor. This temperature-correlated bias current also runs through this resistor. When temperature increases, the bias current also increases, which increases the MOSFET's source-bulk voltage. The increased source-bulk voltage helps to stabilize the threshold voltage of MOSFET at high temperature. A power saving logic is also embedded in this oscillator to achieve higher frequency at lower power consumption. In the present invention, there is no high gain op amp or high speed comparator, which makes the resultant oscillator to be low power design and which can be integrated into a single chip with other system.