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公开(公告)号：JP2013082625A
公开(公告)日：2013-05-09
申请号：JP2013011560
申请日：2013-01-24
Inventor： HAERLE ANDREW G , PERRY EDWARD A
IPC: C04B35/565
CPC classification number: C04B35/565 , C04B2235/3821 , C04B2235/3826 , C04B2235/421 , C04B2235/5436 , C04B2235/5472 , C04B2235/656 , C04B2235/72 , C04B2235/722 , C04B2235/77 , C04B2235/96 , C04B2235/9607
Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a recrystallized silicon carbide body having resistivity of not less than about 1E5 Ωcm and nitrogen atoms of not greater than about 200 ppm.SOLUTION: The method includes steps of: forming a mixture by combining coarse silicon carbide particles and fine silicon carbide particles having an average particle size less than the average particle size of the coarse silicon carbide particles; forming the mixture to form a green article; and heating the green article to a sublimation temperature in an atmosphere comprising an inert gas and having a reduced pressure of not greater than about 25 Torr to form the recrystallized silicon carbide body.
Abstract translation: 要解决的问题：提供一种制造电阻率不小于约1E5Ωcm，氮原子不大于约200ppm的再结晶碳化硅体的方法。 该方法包括以下步骤：通过将粗碳化硅颗粒和平均粒度小于粗碳化硅颗粒的平均粒径的细碳化硅颗粒结合来形成混合物; 形成混合物以形成绿色制品; 并在包含惰性气体的气氛中并且具有不大于约25乇的减压的气氛下将生坯加热到升华温度，以形成再结晶的碳化硅体。 版权所有（C）2013，JPO＆INPIT
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公开(公告)号：WO2009058841A3
公开(公告)日：2009-11-26
申请号：PCT/US2008081555
申请日：2008-10-29
Applicant: SAINT GOBAIN CERAMICS
Inventor： HAERLE ANDREW G , PERRY EDWARD A
IPC: C04B35/573
CPC classification number: C04B35/565 , C04B2235/3821 , C04B2235/3826 , C04B2235/421 , C04B2235/5436 , C04B2235/5472 , C04B2235/656 , C04B2235/72 , C04B2235/722 , C04B2235/77 , C04B2235/96 , C04B2235/9607
Abstract: A recrystallized silicon carbide body is provided that has a resistivity of not less than about 1?5 O cm and a nitrogen content comprising nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm.
Abstract translation: 提供了具有不小于约1〜5Ocm的电阻率和包含结合在体内的氮原子的氮含量的再结晶碳化硅体，其中氮含量不大于约200ppm。
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