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公开(公告)号:WO2011011606A3
公开(公告)日:2011-04-28
申请号:PCT/US2010042912
申请日:2010-07-22
Applicant: SAINT GOBAIN CERAMICS , PUJARI VIMAL K , HENNESSEY JAMES T , REILLY CHRISTOPHER J
Inventor: PUJARI VIMAL K , HENNESSEY JAMES T , REILLY CHRISTOPHER J
IPC: C04B35/563 , C01B31/36 , C04B35/622 , C04B35/634 , C04B35/64
CPC classification number: C04B35/6264 , B82Y30/00 , C01B32/956 , C04B35/563 , C04B35/62605 , C04B35/6261 , C04B2235/3834 , C04B2235/3843 , C04B2235/3895 , C04B2235/422 , C04B2235/424 , C04B2235/425 , C04B2235/48 , C04B2235/483 , C04B2235/5409 , C04B2235/5436 , C04B2235/5454 , C04B2235/608 , C04B2235/6581 , C04B2235/77 , C04B2235/80 , C04B2235/96
Abstract: A method of forming a sintered boron carbide body includes washing boron carbide powder with essentially pure water at an elevated temperature to generate low oxygen boron carbide powder, mixing a sintering aid and a pressing aid with the low oxygen boron carbide powder to form a green mixture, and shaping the green mixture into a green boron carbide body. The method can include mixing titanium carbide powder having an average particle diameter in a range of between about 5 nm and about 100 nm with the low oxygen boron carbide powder. The method can further include sintering the green boron carbide body, and hot isostatic pressing the sintered body, to a density greater than about 98.5% of the theoretical density (TD) of boron carbide. Alternatively, the method can include sintering the shaped boron carbide green body at a temperature greater than about 2,200 0C, to thereby form a eutectic liquid solid solution of B4C/SiC, forming a sintered boron carbide body with a density greater than about 98% TD.
Abstract translation: 一种形成烧结碳化硼本体的方法包括在升高的温度下用基本纯净的水洗涤碳化硼粉末以生成低氧碳化硼粉末,将烧结助剂和压制助剂与低碳氧化硼粉末混合以形成生绿混合物 ,并将绿色混合物成形为绿色碳化硼体。 该方法可以包括将平均颗粒直径在约5nm和约100nm之间的碳化钛粉末与低氧碳化硼粉末混合。 该方法可以进一步包括烧结未烧结的碳化硼本体,并且热等静压烧结体,至大于碳化硼的理论密度(TD)的大约98.5%的密度。 或者,该方法可以包括在大于约2200℃的温度下烧结成形的碳化硼生坯体,从而形成B 4 C / SiC的共晶液体固溶体,形成密度大于约98%TD的烧结碳化硼体 。
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公开(公告)号:WO2012092369A3
公开(公告)日:2012-11-22
申请号:PCT/US2011067581
申请日:2011-12-28
Applicant: SAINT GOBAIN CERAMICS
Inventor: CORTELLINI EDMUND A , REILLY CHRISTOPHER J , PUJARI VIMAL K
IPC: C30B15/00 , C04B35/584 , C30B29/06
CPC classification number: C30B15/10 , C04B35/14 , C04B35/565 , C04B35/584 , C04B35/591 , C04B35/597 , C04B35/6263 , C04B41/009 , C04B41/5066 , C04B41/87 , C04B2235/3418 , C04B2235/3826 , C04B2235/3873 , C04B2235/428 , C04B2235/5436 , C04B2235/5445 , C04B2235/5472 , C04B2235/6021 , C04B2235/6027 , C04B2235/652 , C04B2235/658 , C04B2235/72 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , C30B35/002 , C04B38/00
Abstract: An article including a monolithic crucible body comprising silicon oxynitride (SixNyO, wherein x>0 and y>0), wherein the silicon oxynitride extends throughout the entire volume of the monolithic crucible body.
Abstract translation: 一种制品,包括一个包括氮氧化硅(SixNyO,其中x> 0和y> 0)的整体式坩埚体,其中氮氧化硅贯穿整个坩埚体的整个体积。
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公开(公告)号:WO2012092587A3
公开(公告)日:2013-01-10
申请号:PCT/US2011068173
申请日:2011-12-30
Applicant: SAINT GOBAIN CERAMICS
Inventor: REILLY CHRISTOPHER J , ZHONG YU
IPC: C04B35/565 , C04B35/64 , C04B41/81
CPC classification number: C04B35/622 , C04B35/565 , C04B35/6316 , C04B41/009 , C04B41/5022 , C04B41/5031 , C04B41/5037 , C04B41/86 , C04B41/87 , C04B2235/3217 , C04B2235/3272 , C04B2235/3826 , C04B2235/405 , C04B2235/428 , C04B2235/46 , C04B2235/658 , C04B2235/6586 , C04B2235/663 , Y10T428/249921 , Y10T428/249969 , C04B41/4535 , C04B14/4656
Abstract: A method of forming a ceramic article including providing a ceramic body comprising silicon carbide, and treating the ceramic body in an atmosphere comprising an oxidizing material to remove a portion of the ceramic body through a chemical reaction between a portion of the ceramic body and the oxidizing material.
Abstract translation: 一种形成陶瓷制品的方法,包括提供包括碳化硅的陶瓷体,并且在包含氧化材料的气氛中处理陶瓷体,以通过陶瓷体的一部分与氧化物之间的化学反应去除陶瓷体的一部分 材料。
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公开(公告)号:WO2011084252A3
公开(公告)日:2011-10-13
申请号:PCT/US2010057654
申请日:2010-11-22
Applicant: SAINT GOBAIN CERAMICS
Inventor: REILLY CHRISTOPHER J , CORTELLINI EDMUND A
CPC classification number: C04B35/565 , C04B35/6316 , C04B2235/3217 , C04B2235/3272 , C04B2235/3418 , C04B2235/3463 , C04B2235/3826 , C04B2235/3873 , C04B2235/428 , C04B2235/5427 , C04B2235/5472 , C04B2235/6027 , C04B2235/72 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/95 , C04B2235/96 , C04B2235/963 , C04B2235/9661 , Y10T428/24372
Abstract: An electrostatic dissipative (ESD) article includes a body having a volume resistivity within a range between about 104 ohm-cm and about 1010 ohm-cm as measured at 23°C and 500 V. The body also has a first phase including a nitride, a second phase including a carbide, and a third phase including an oxide material.
Abstract translation: 静电耗散(ESD)制品包括具有在23℃和500V下测得的体积电阻率在约104ohm-cm与约1010ohm-cm之间的范围内的主体。主体还具有包含氮化物的第一相, 包含碳化物的第二相和包含氧化物材料的第三相。
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公开(公告)号:WO2011011601A2
公开(公告)日:2011-01-27
申请号:PCT/US2010042905
申请日:2010-07-22
Applicant: SAINT GOBAIN CERAMICS , PUJARI VIMAL K , JORGE ERIC , REILLY CHRISTOPHER J
Inventor: PUJARI VIMAL K , JORGE ERIC , REILLY CHRISTOPHER J
IPC: C04B35/565 , C04B35/56 , C04B35/563 , C04B35/64
CPC classification number: C04B35/565 , B82Y30/00 , C04B35/62655 , C04B35/62695 , C04B2235/3821 , C04B2235/3843 , C04B2235/3895 , C04B2235/422 , C04B2235/424 , C04B2235/48 , C04B2235/5288 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/608 , C04B2235/723 , C04B2235/77 , C04B2235/96
Abstract: A method of forming a sintered silicon carbide body includes mixing silicon carbide powder having an oxygen content of less than about 3 wt% and having a surface area in a range of between about 8 m /g and about 15 m /g, with boron carbide powder and carbon sintering aid to form a green silicon carbide body. Alternatively, a method of producing a sintered silicon carbide body includes mixing the silicon carbide powder with titanium carbide powder having an average particle diameter in a range of between about 5 nm and about 100 nm and with carbon sintering aid to form a green silicon carbide body. In another alternative, a method of forming a sintered silicon carbide body includes mixing silicon carbide powder with boron carbide powder, the titanium carbide powder, and carbon sintering aid to form a green silicon carbide body. After sintering, the silicon carbide bodies have a density at least 98% of the theoretical density of silicon carbide.
Abstract translation: 形成烧结碳化硅本体的方法包括将具有小于约3重量%的氧含量低于约8m 2 / g至约15m 2 / g的表面积的碳化硅粉末与碳化硼混合 粉末和碳烧结助剂形成绿色碳化硅体。 或者,制造烧结碳化硅体的方法包括将碳化硅粉末与平均粒径在约5nm至约100nm范围内的碳化钛粉末和碳烧结助剂混合以形成绿碳化硅体 。 在另一个替代方案中,形成烧结碳化硅本体的方法包括将碳化硅粉末与碳化硼粉末,碳化钛粉末和碳烧结助剂混合以形成绿碳化硅体。 烧结后,碳化硅体的密度为碳化硅理论密度的至少98%。
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6.
公开(公告)号:WO2010078356A2
公开(公告)日:2010-07-08
申请号:PCT/US2009069725
申请日:2009-12-29
Applicant: SAINT GOBAIN CERAMICS , REILLY CHRISTOPHER J , LIN GUANGYONG , NARENDAR YESHWANTH
Inventor: REILLY CHRISTOPHER J , LIN GUANGYONG , NARENDAR YESHWANTH
CPC classification number: H01M8/1213 , H01M4/8652 , H01M4/8889 , H01M4/9033 , H01M8/1226 , H01M8/124 , H01M8/1246 , H01M8/2425 , H01M8/2465 , Y02E60/525 , Y02P70/56 , Y10T29/49108
Abstract: A solid oxide fuel cell includes an anode layer, an electrolyte layer over a surface of the anode layer, and a cathode layer over a surface of the electrolyte layer. The cathode layer includes a cathode bulk layer, a porous cathode functional layer at an electrolyte, an intermediate cathode layer partitioning the cathode bulk layer and the porous cathode functional layer, the porous intermediate cathode layer having a porosity greater than that of the cathode bulk layer. The solid oxide fuel cells can be combined to form subassemblies that are bonded together to form solid oxide fuel cell assemblies.
Abstract translation: 固体氧化物燃料电池包括阳极层,阳极层表面上的电解质层和电解质层表面上的阴极层。 阴极层包括阴极本体层,电解质中的多孔阴极功能层,分隔阴极体层和多孔阴极功能层的中间阴极层,多孔中间阴极层的孔隙率大于阴极体层的孔隙率 。 固体氧化物燃料电池可以组合以形成结合在一起以形成固体氧化物燃料电池组件的子组件。
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公开(公告)号:ES2747476T3
公开(公告)日:2020-03-10
申请号:ES12836818
申请日:2012-09-27
Applicant: SAINT GOBAIN CERAMICS
Inventor: REILLY CHRISTOPHER J , PUJARI VIMAL K , CORTELLINI EDMUND A , MCELWEE DAVID M
IPC: C04B35/587 , B82Y30/00 , C04B35/591 , C04B35/593
Abstract: Un artículo compuesto que comprende: un cuerpo que incluye: una primera fase que consiste esencialmente en nitruro de silicio, siendo la primera fase al menos aproximadamente un 50 % en peso y no mayor de aproximadamente un 90 % en peso para el peso total del cuerpo; una segunda fase que consiste esencialmente en carburo de silicio, siendo la segunda fase al menos un 5 % en peso y no mayor de un 45 % en peso para el peso total del cuerpo; una tercera fase que comprende una primera y una segunda porción, en la que la primera porción de la tercera fase comprende un material de fase amorfa que incluye un material de óxido de aluminio y magnesio; y en el que: el cuerpo comprende un contenido de nitrógeno en exceso de la cantidad estequiométrica de nitrógeno asociada con el material de nitruro, y la primera porción de la tercera fase comprende un contenido de nitrógeno de al menos aproximadamente un 1,6 % en peso para el peso total del cuerpo; y el cuerpo comprende un mayor contenido de la segunda fase que el contenido de la tercera fase, incluyendo la cantidad total de la primera porción y la segunda porción.
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公开(公告)号:PL2760807T3
公开(公告)日:2019-12-31
申请号:PL12836818
申请日:2012-09-27
Applicant: SAINT GOBAIN CERAMICS
Inventor: REILLY CHRISTOPHER J , PUJARI VIMAL K , CORTELLINI EDMUND A , MCELWEE DAVID M
IPC: C04B35/587 , B82Y30/00 , C04B35/591 , C04B35/593
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公开(公告)号:EP2456733A4
公开(公告)日:2013-03-13
申请号:EP10802902
申请日:2010-07-22
Applicant: SAINT GOBAIN CERAMICS
Inventor: PUJARI VIMAL K , HENNESSEY JAMES T , REILLY CHRISTOPHER J
IPC: C04B35/563 , C01B31/36 , C04B35/622 , C04B35/634 , C04B35/64
CPC classification number: C04B35/6264 , B82Y30/00 , C01B32/956 , C04B35/563 , C04B35/62605 , C04B35/6261 , C04B2235/3834 , C04B2235/3843 , C04B2235/3895 , C04B2235/422 , C04B2235/424 , C04B2235/425 , C04B2235/48 , C04B2235/483 , C04B2235/5409 , C04B2235/5436 , C04B2235/5454 , C04B2235/608 , C04B2235/6581 , C04B2235/77 , C04B2235/80 , C04B2235/96
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公开(公告)号:EP2459500A4
公开(公告)日:2012-12-26
申请号:EP10802899
申请日:2010-07-22
Applicant: SAINT GOBAIN CERAMICS
Inventor: PUJARI VIMAL K , JORGE ERIC , REILLY CHRISTOPHER J
IPC: C04B35/565 , C04B35/56 , C04B35/563 , C04B35/64
CPC classification number: C04B35/565 , B82Y30/00 , C04B35/62655 , C04B35/62695 , C04B2235/3821 , C04B2235/3843 , C04B2235/3895 , C04B2235/422 , C04B2235/424 , C04B2235/48 , C04B2235/5288 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/608 , C04B2235/723 , C04B2235/77 , C04B2235/96
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