METHOD AND APPARATUS FOR MONITORING PLASMA PROCESSING OPERATIONS
    1.
    发明申请
    METHOD AND APPARATUS FOR MONITORING PLASMA PROCESSING OPERATIONS 审中-公开
    用于监测等离子体处理操作的方法和装置

    公开(公告)号:WO9954694A9

    公开(公告)日:2001-08-09

    申请号:PCT/US9908894

    申请日:1999-04-23

    Applicant: SANDIA CORP

    CPC classification number: G01J3/443 G01J3/28 G01J2003/2866

    Abstract: The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in some manner to calibrating or initializing a plasma monitoring assembly (174). This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window (124) through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber (74).

    Abstract translation: 本发明一般涉及等离子体工艺的各个方面,更具体地说涉及这种等离子体工艺的监测。 一个方面以某种方式涉及校准或初始化等离子体监视组件(174)。 这种类型的校准可以用于解决与在等离子体处理中获得的光发射数据相关联的波长偏移,强度偏移或二者。 校准光可以指向窗口(124),通过该窗口获得光发射数据以确定窗口的内表面对通过其获得的光发射数据具有的影响(如果有的话),则操作 光发射数据采集装置,或两者兼而有之。 另一方面至少在一些方面涉及可以在处理室(74)内运行的等离子体处理(更典型地是正在运行的)的各种类型的评估。

    METHOD AND APPARATUS FOR MONITORING PLASMA PROCESSING OPERATIONS
    2.
    发明公开
    METHOD AND APPARATUS FOR MONITORING PLASMA PROCESSING OPERATIONS 审中-公开
    方法和装置等离子处理操作注视着董先生

    公开(公告)号:EP1105703A4

    公开(公告)日:2005-08-03

    申请号:EP99918803

    申请日:1999-04-23

    Applicant: SANDIA CORP

    CPC classification number: G01J3/443 G01J3/28 G01J2003/2866

    Abstract: The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in some manner to calibrating or initializing a plasma monitoring assembly (174). This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window (124) through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber (74).

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