公开(公告)号：US11837670B2

公开(公告)日：2023-12-05

申请号：US16949228

申请日：2020-10-21

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen Sulfridge ,  Anne Deignan ,  Nader Jedidi ,  Michael Gerard Keyes

IPC: H01L31/02 ,  H04N25/63 ,  H01L27/146 ,  H01L31/055 ,  H01L31/107 ,  H01L31/0232 ,  G02B3/06

CPC classification number: H01L31/02027 ,  G02B3/06 ,  H01L27/1463 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14649 ,  H01L31/02327 ,  H01L31/055 ,  H01L31/107 ,  H01L27/1464 ,  H04N25/63

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

公开(公告)号：US12199198B2

公开(公告)日：2025-01-14

申请号：US18493996

申请日：2023-10-25

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen Sulfridge ,  Anne Deignan ,  Nader Jedidi ,  Michael Gerard Keyes

IPC: H01L31/02 ,  G02B3/06 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/055 ,  H01L31/107 ,  H04N25/63

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

公开(公告)号：US12034025B2

公开(公告)日：2024-07-09

申请号：US17302836

申请日：2021-05-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter Gambino ,  David T. Price ,  Marc Allen Sulfridge ,  Richard Mauritzson ,  Michael Gerard Keyes ,  Ryan Rettmann ,  Kevin Mcstay

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/1464

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To mitigate crosstalk, isolation structures may be formed around each SPAD. The isolation structures may include front side deep trench isolation structures that extend partially or fully through a semiconductor substrate for the SPADs. The isolation structures may include a metal filler such as tungsten that absorbs photons. The isolation structures may include a p-type doped semiconductor liner to mitigate dark current. The isolation structures may include a buffer layer such as silicon dioxide that is interposed between the metal filler and the p-type doped semiconductor liner. The isolation structures may have a tapered portion or may be formed in two steps such that the isolation structures have different portions with different properties. An additional filler such as polysilicon or borophosphosilicate glass may be included in some of the isolation structures in addition to the metal filler.