公开(公告)号：US12034025B2

公开(公告)日：2024-07-09

申请号：US17302836

申请日：2021-05-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter Gambino ,  David T. Price ,  Marc Allen Sulfridge ,  Richard Mauritzson ,  Michael Gerard Keyes ,  Ryan Rettmann ,  Kevin Mcstay

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/1464

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To mitigate crosstalk, isolation structures may be formed around each SPAD. The isolation structures may include front side deep trench isolation structures that extend partially or fully through a semiconductor substrate for the SPADs. The isolation structures may include a metal filler such as tungsten that absorbs photons. The isolation structures may include a p-type doped semiconductor liner to mitigate dark current. The isolation structures may include a buffer layer such as silicon dioxide that is interposed between the metal filler and the p-type doped semiconductor liner. The isolation structures may have a tapered portion or may be formed in two steps such that the isolation structures have different portions with different properties. An additional filler such as polysilicon or borophosphosilicate glass may be included in some of the isolation structures in addition to the metal filler.

公开(公告)号：US09848148B1

公开(公告)日：2017-12-19

申请号：US15185829

申请日：2016-06-17

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Richard Scott Johnson ,  Richard Mauritzson

IPC: H04N5/372 ,  H04N5/335

CPC classification number: H04N5/372 ,  H04N5/3355 ,  H04N5/35581 ,  H04N5/37452

Abstract: Various embodiments of the present technology may comprise a method and apparatus for a pixel array. Each pixel may include multiple storage regions capable of storing pixel signals during integration. The method and apparatus may utilize the floating diffusion region as a storage region during both an integration period and readout period. The method and apparatus may store pixel signals corresponding to a first exposure periods in the floating diffusion region and pixel signals corresponding to a second exposure periods in a separate storage region.

公开(公告)号：US09847359B2

公开(公告)日：2017-12-19

申请号：US15139505

申请日：2016-04-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Aaron Belsher ,  Richard Mauritzson ,  Swarnal Borthakur ,  Ulrich Boettiger

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

Abstract: A backside illuminated image sensor with an array of pixels formed in a substrate is provided. To improve surface planarity, bond pads formed at the periphery of the array of pixels may be recessed into a back surface of the substrate. The bond pads may be recessed into a semiconductor layer of the substrate, may be recessed into a window in the semiconductor layer, or may be recessed in a passivation layer and covered with non-conductive material such as resin. In order to further improve surface planarity, a window may be formed in the semiconductor layer at the periphery of the array of pixels, or scribe region, over alignment structures. By providing an image sensor with improved surface planarity, device yield and time-to-market may be improved, and window framing defects and microlens/color filter non-uniformity may be reduced.

公开(公告)号：US11133346B2

公开(公告)日：2021-09-28

申请号：US16729713

申请日：2019-12-30

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Raminda Madurawe ,  Richard Mauritzson

IPC: H01L27/146 ,  H01L25/04

Abstract: A stacked-die image sensor may be provided with an array of image pixels. The stacked-die image sensor may include at least first and second integrated circuit dies stacked on top of one another. Some of the pixel circuitry in each pixel may be formed in the first integrated circuit die and some of the pixel circuitry in each pixel may be formed in the second integrated circuit die. Coupling structures such as conductive pads may electrically couple the pixel circuitry in the first integrated circuit die to the pixel circuitry in the second integrated circuit die. A shielding structure may partially or completely surround each conductive pad to reduce parasitic capacitive coupling between adjacent conductive pads. The shielding structure may be a metal wire coupled to a ground voltage. The shielding structure may extend between columns of image pixels and/or between rows of image pixels.

公开(公告)号：US09871068B1

公开(公告)日：2018-01-16

申请号：US15242326

申请日：2016-08-19

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Richard Mauritzson

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/14616 ,  H01L27/1461 ,  H01L27/14689

Abstract: Various embodiments of the present technology may comprise a method and device for a multi-source/drain transistor for use in an image sensor. The device may comprise an active region, wherein the active region comprises three doped regions. Two of the three doped region may be floating diffusion active regions, wherein each floating diffusion active region is connected to a photosensitive element. The device may comprise a multi-branch channel defined by the area underlying a gate region and substantially surrounded by the doped regions. During operation the electron path may form an “L” shape within the channel.

公开(公告)号：US10566375B2

公开(公告)日：2020-02-18

申请号：US15155245

申请日：2016-05-16

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Raminda Madurawe ,  Richard Mauritzson

IPC: H01L27/146 ,  H01L25/04

Abstract: A stacked-die image sensor may be provided with an array of image pixels. The stacked-die image sensor may include at least first and second integrated circuit dies stacked on top of one another. Some of the pixel circuitry in each pixel may be formed in the first integrated circuit die and some of the pixel circuitry in each pixel may be formed in the second integrated circuit die. Coupling structures such as conductive pads may electrically couple the pixel circuitry in the first integrated circuit die to the pixel circuitry in the second integrated circuit die. A shielding structure may partially or completely surround each conductive pad to reduce parasitic capacitive coupling between adjacent conductive pads. The shielding structure may be a metal wire coupled to a ground voltage. The shielding structure may extend between columns of image pixels and/or between rows of image pixels.

公开(公告)号：US10276614B2

公开(公告)日：2019-04-30

申请号：US15861722

申请日：2018-01-04

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Richard Mauritzson

IPC: H01L27/14 ,  H01L29/10 ,  H01L29/49 ,  H04N5/347 ,  H04N5/355 ,  H04N5/376 ,  H04N5/378 ,  H01L27/146 ,  H04N5/3745

Abstract: Various embodiments of the present technology may comprise a method and device for a multi-branch transistor for use in an image sensor. The device may comprise an active region, wherein the active region comprises three doped regions. At least two of the three doped region may be floating diffusion active regions, wherein each floating diffusion active region is connected to a single photosensitive element or multiple photosensitive elements. The device may comprise a multi-branch channel region defined by the area underlying a gate region and substantially surrounded by the doped regions.

公开(公告)号：US10475832B2

公开(公告)日：2019-11-12

申请号：US15758387

申请日：2016-08-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marko Mlinar ,  Ulrich Boettiger ,  Richard Mauritzson

IPC: H01L27/146 ,  H04N5/369 ,  H04N9/04

Abstract: An image sensor may include pixels having nested sub-pixels. A pixel with nested sub-pixels may include an inner sub-pixel that has either an elliptical or a rectangular light collecting area. The inner sub-pixel may be formed in a substrate and may be immediately surrounded by a sub-pixel group that includes one or more sub-pixels. The inner sub-pixel may have a light collecting area at a surface that is less sensitive than the light collecting area of the one or more outer sub-pixel groups. Microlenses may be formed over the nested sub-pixels, to direct light away from the inner sub-pixel group to the outer sub-pixel groups in nested sub-pixels. A color filter of a single color may be formed over the nested sub-pixels. Hybrid color filters having a single color filter region over the inner sub-pixel and a portion of the one or more outer sub-pixel groups may also be used.

公开(公告)号：US09350914B1

公开(公告)日：2016-05-24

申请号：US14620030

申请日：2015-02-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balwinder Kaur ,  Brian Keelan ,  Richard Mauritzson ,  Marko Mlinar

IPC: H04N5/228 ,  H04N5/232 ,  G06K9/00 ,  G06K9/62 ,  G06T5/00

CPC classification number: H04N5/23229 ,  G06K9/00228 ,  G06K9/00771 ,  G06K9/00791 ,  G06K9/3258 ,  G06K9/62 ,  G06K2209/15 ,  G06T5/002 ,  G06T2207/10004 ,  G06T2207/20172 ,  G06T2207/30204 ,  G06T2207/30232

Abstract: An imaging system may capture image data and use the captured image data to detect a privacy request. Depending on the specific privacy request, the imaging system may delete or blur the captured image to comply with the detected privacy request. The imaging system may use face recognition software and only blur faces that are present in the captured image, leaving the rest of the image unobscured. The imaging system may only comply with the privacy request if the imaging system is in a predetermined area or within a predetermined distance of a privacy seeking external device. The imaging system may be disabled if the system enters a geo-fenced area that restricts the capture of images. The imaging system may recognize a given temporal pattern of light as a privacy request and modify any captured images accordingly.

Abstract translation: 成像系统可以捕获图像数据并使用所捕获的图像数据来检测隐私请求。 根据具体的隐私请求，成像系统可以删除或模糊所捕获的图像以符合检测到的隐私请求。 成像系统可以使用面部识别软件，并且仅仅存在于拍摄图像中的模糊面部，留下图像的其余部分。 如果成像系统处于预定区域或隐私寻求外部设备的预定距离内，成像系统可能仅符合隐私请求。 如果系统进入限制图像捕获的地理围栏区域，成像系统可能会被禁用。 成像系统可以将给定的时间模式识别为隐私请求，并且相应地修改所捕获的图像。