-
公开(公告)号:WO2016043464A1
公开(公告)日:2016-03-24
申请号:PCT/KR2015/009438
申请日:2015-09-08
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: LEE, Seom Geun , KIM, Mae Yi , KIM, Kyoung Wan , YOON, Yeo Jin , LEE, Keum Ju
IPC: H01L33/48
CPC classification number: H01L33/382 , H01L27/153 , H01L27/156
Abstract: Disclosed herein is a light-emitting diode including: a substrate; and at least two light-emitting cell groups positioned on the substrate and having a plurality of light-emitting cells connected to each other in series, in which the at least two light-emitting cell groups each are separately driven, spaced apart from each other at a predetermined interval to be insulated from each other, and have different areas and the light-emitting cell group includes: a plurality of light-emitting cells including first semiconductor layers, active layers, and second semiconductor layers and provided with grooves through which the first semiconductor layers are exposed; a first electrode disposed on the second semiconductor layer; an insulating layer covering the plurality of light-emitting cells to expose portions of the first electrode and the first semiconductor layer; and a connection electrode electrically connected to the exposed portions of the first electrode and first semiconductor layer.
Abstract translation: 本文公开了一种发光二极管,包括:基板; 以及至少两个发光单元组,其位于所述基板上并且具有彼此串联连接的多个发光单元,其中所述至少两个发光单元组分别被驱动,彼此间隔开 以预定间隔彼此绝缘,并且具有不同的面积,并且发光单元组包括:多个发光单元,包括第一半导体层,有源层和第二半导体层,并且设置有沟槽,通过该沟槽, 第一半导体层被暴露; 设置在所述第二半导体层上的第一电极; 覆盖所述多个发光单元以暴露所述第一电极和所述第一半导体层的部分的绝缘层; 以及电连接到第一电极和第一半导体层的暴露部分的连接电极。
-
2.
公开(公告)号:EP3346511A1
公开(公告)日:2018-07-11
申请号:EP16842174.1
申请日:2016-08-23
Applicant: Seoul Viosys Co. Ltd.
Inventor: LEE, Jin Woong , SHIN, Chan Seob , LEE, Keum Ju , LEE, Seom Geun , YANG, Myoung Hak
CPC classification number: H01L33/42 , G02F1/133603 , H01L33/00 , H01L33/10 , H01L33/325 , H01L33/387 , H01L33/46 , H01L33/62
Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arcsec.
-
公开(公告)号:EP3355367A1
公开(公告)日:2018-08-01
申请号:EP16848983.9
申请日:2016-09-23
Applicant: Seoul Viosys Co. Ltd.
Inventor: LEE, Keum Ju , LEE, Seom Geun , YUN, Jun Ho , GWAK, Woo Chul , JANG, Sam Seok
CPC classification number: H01L33/24 , H01L33/007 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/42 , H01L33/54 , H01L33/62 , H01L2224/04042 , H01L2224/05012 , H01L2224/16245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/1815 , H01L2924/00014
Abstract: A light emitting element and a light emitting apparatus are provided. The light emitting element, which has a first side and a second side having a shorter length than the first side, comprises: a substrate including protrusions formed on the upper surface thereof; and a light emitting structure located on the substrate, wherein the protrusions are disposed in a honeycomb pattern and include a first protrusion and second to seventh protrusions which are adjacent to the first protrusion and spaced equidistant from the first protrusions; wherein the angle between a first vector line extending in a direction from the center of the first protrusion toward the center of the second protrusion and a second vector line extending in a direction from the center of the first protrusion to the center of the fourth projection is 120°, the angle between the second vector line and the third vector line extending in a direction from the center of the first projection to the center of the sixth protrusion is 120°; and the angle θ between the first side surface and at least one vector line of the first vector line to the third vector line is 15° or greater and 45° or less.
-
-