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公开(公告)号：WO2017057997A1
公开(公告)日：2017-04-06
申请号：PCT/KR2016/011082
申请日：2016-10-04
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： LEE, Seom Geun
CPC classification number: H01L33/42 , H01L33/0066 , H01L33/007 , H01L33/06 , H01L33/145 , H01L33/16 , H01L33/26 , H01L33/32 , H01L33/38 , H01L33/44 , H01L2933/0016
Abstract: LED devices having high-quality single crystal ZnO structures for spreading currents and extracting light out of the LEDs are disclosed. In one aspect, a LED device is provided to include a substrate; a first semiconductor layer exhibiting a first conductivity type and formed over the substrate; an active light-emitting structure formed over the first semiconductor layer, the active light-emitting structure operable to emit light under electrical excitation; a second semiconductor layer exhibiting a second conductivity type and formed over the active light-emitting structure; and a single crystal ZnO structure formed over the second semiconductor layer and including a bottom single crystal ZnO portion over the second semiconductor layer and a top single crystal ZnO portion extending from the bottom single crystal ZnO portion, wherein the bottom single crystal ZnO portion is a contiguous single crystal ZnO portion without having voids.
Abstract translation: 公开了具有用于扩展电流并从LED中提取光的高质量单晶ZnO结构的LED器件。 一方面，提供一种LED器件以包括衬底; 表现出第一导电类型并形成在衬底上的第一半导体层; 形成在所述第一半导体层上的有源发光结构，所述有源发光结构可操作以在电激励下发光; 表现出第二导电类型并形成在有源发光结构上的第二半导体层; 以及形成在第二半导体层上的单晶ZnO结构，并且在第二半导体层上包括底部单晶ZnO部分和从底部单晶ZnO部分延伸的顶部单晶ZnO部分，其中底部单晶ZnO部分为 连续的单晶ZnO部分，没有空隙。
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公开(公告)号：WO2016043464A1
公开(公告)日：2016-03-24
申请号：PCT/KR2015/009438
申请日：2015-09-08
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： LEE, Seom Geun , KIM, Mae Yi , KIM, Kyoung Wan , YOON, Yeo Jin , LEE, Keum Ju
IPC: H01L33/48
CPC classification number: H01L33/382 , H01L27/153 , H01L27/156
Abstract: Disclosed herein is a light-emitting diode including: a substrate; and at least two light-emitting cell groups positioned on the substrate and having a plurality of light-emitting cells connected to each other in series, in which the at least two light-emitting cell groups each are separately driven, spaced apart from each other at a predetermined interval to be insulated from each other, and have different areas and the light-emitting cell group includes: a plurality of light-emitting cells including first semiconductor layers, active layers, and second semiconductor layers and provided with grooves through which the first semiconductor layers are exposed; a first electrode disposed on the second semiconductor layer; an insulating layer covering the plurality of light-emitting cells to expose portions of the first electrode and the first semiconductor layer; and a connection electrode electrically connected to the exposed portions of the first electrode and first semiconductor layer.
Abstract translation: 本文公开了一种发光二极管，包括：基板; 以及至少两个发光单元组，其位于所述基板上并且具有彼此串联连接的多个发光单元，其中所述至少两个发光单元组分别被驱动，彼此间隔开 以预定间隔彼此绝缘，并且具有不同的面积，并且发光单元组包括：多个发光单元，包括第一半导体层，有源层和第二半导体层，并且设置有沟槽，通过该沟槽， 第一半导体层被暴露; 设置在所述第二半导体层上的第一电极; 覆盖所述多个发光单元以暴露所述第一电极和所述第一半导体层的部分的绝缘层; 以及电连接到第一电极和第一半导体层的暴露部分的连接电极。
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公开(公告)号：WO2015005706A1
公开(公告)日：2015-01-15
申请号：PCT/KR2014/006222
申请日：2014-07-10
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： LEE, Seom Geun , YOON, Yeo Jin , KIM, Jae Kwon , LEE, So Ra , YANG, Myoung Hak
CPC classification number: H01L27/0255 , H01L25/167 , H01L27/15 , H01L33/06 , H01L33/32 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.
Abstract translation: 这里公开了具有ESD保护的发光二极管芯片。 示例性实施例提供一种倒装芯片型发光二极管芯片，其包括在基板上对准的发光二极管部分和设置在基板上并连接到发光二极管部分的反并联二极管部分。 在倒装芯片型发光二极管芯片内，发光二极管部分与反并联二极管部分一起放置，从而提供显示出对静电放电具有很强抵抗力的发光二极管芯片。
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公开(公告)号：EP3923326A1
公开(公告)日：2021-12-15
申请号：EP20753265.6
申请日：2020-02-06
Applicant: Seoul Viosys Co., Ltd
Inventor： LEE, Seom Geun , SHIN, Chan Seob , LEE, Ho Joon , JANG, Seong Kyu
Abstract: A light-emitting element for a display according to one embodiment comprises: a first LED lamination; a second LED lamination; a third LED lamination; a first transparent electrode interposed between the first LED lamination and the second LED lamination and being in ohmic contact with the lower surface of the first LED lamination; a second transparent electrode interposed between the first LED lamination and the second LED lamination and being in ohmic contact with the upper surface of the second LED lamination; a third transparent electrode interposed between the second LED lamination and the third LED lamination and being in ohmic contact with the upper surface of the third LED lamination; an n electrode pad disposed on a first conductive semiconductor layer of the third LED lamination; a lower p electrode pad disposed on the third transparent electrode; and bump pads arranged on the first LED lamination, wherein the upper surface of the n electrode pad is located at the same height as that of the upper surface of the lower p electrode pad.
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公开(公告)号：EP4343864A1
公开(公告)日：2024-03-27
申请号：EP22804950.8
申请日：2022-05-17
Applicant: Seoul Viosys Co., Ltd.
Inventor： KIM, Tae Gyun , BAE, Seon Min , LEE, Seom Geun , LEE, Kyu Ho
Abstract: An ultraviolet light-emitting diode is provided. The ultraviolet light-emitting diode according to an embodiment comprises: a substrate having a plurality of holes surrounded by a flat surface; a first semiconductor layer positioned on the substrate; a second semiconductor layer disposed on the first semiconductor layer; and an active layer arranged between the first semiconductor layer and the second semiconductor layer, wherein a distance from the flat surface to the active layer is closer than a distance from the bottom surface of the plurality of holes to the active layer, and the flat surface is in contact with the first semiconductor layer.
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Patent Agency Ranking
公开(公告)号：EP4020552A1
公开(公告)日：2022-06-29
申请号：EP20855589.6
申请日：2020-07-31
Applicant: Seoul Viosys Co., Ltd
Inventor： CHAE, Jong Hyeon , LEE, Seom Geun , JANG, Seong Kyu
Abstract: A light-emitting element for a display according to an embodiment comprises: a first LED stack for generating light having a first peak wavelength; a second LED stack disposed below the first LED stack and generating light having a second peak wavelength; a third LED stack disposed below the second LED stack and generating light having a third peak wavelength; and a floating reflective layer disposed above the first LED stack and reflecting the light having the first peak wavelength, wherein the first peak wavelength is a longer wavelength than the second and third peak wavelengths.
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公开(公告)号：EP4407697A2
公开(公告)日：2024-07-31
申请号：EP24169073.4
申请日：2020-02-06
Applicant: Seoul Viosys Co., Ltd.
Inventor： LEE, Seom Geun , SHIN, Chan Seob , LEE, Ho Joon , JANG, Seong Kyu
IPC: H01L33/00
CPC classification number: H01L33/42 , H01L33/62 , H01L25/0756 , H01L33/382
Abstract: A light-emitting element for a display according to one embodiment comprises: a first LED lamination; a second LED lamination; a third LED lamination; a first transparent electrode interposed between the first LED lamination and the second LED lamination and being in ohmic contact with the lower surface of the first LED lamination; a second transparent electrode interposed between the first LED lamination and the second LED lamination and being in ohmic contact with the upper surface of the second LED lamination; a third transparent electrode interposed between the second LED lamination and the third LED lamination and being in ohmic contact with the upper surface of the third LED lamination; an n electrode pad disposed on a first conductive semiconductor layer of the third LED lamination; a lower p electrode pad disposed on the third transparent electrode; and bump pads arranged on the first LED lamination, wherein the upper surface of the n electrode pad is located at the same height as that of the upper surface of the lower p electrode pad.
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公开(公告)号：EP3876281A1
公开(公告)日：2021-09-08
申请号：EP19878906.7
申请日：2019-11-01
Applicant: Seoul Viosys Co., Ltd
Inventor： CHAE, Jong Hyeon , SHIN, Chan Seob , LEE, Seom Geun , LEE, Ho Joon , JANG, Seong Kyu
Abstract: Provided is a light emitting element. The light emitting device comprises: a first light emitting unit having a first area; a second light emitting unit having a second area; and a third light emitting unit having a third area, wherein the first light emitting unit is coplanar with the second light emitting unit, and the third light emitting unit is disposed over the first and second light emitting units, and the third area is larger than each of the first and second areas.
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9.发明公开
公开(公告)号：EP3346511A1
公开(公告)日：2018-07-11
申请号：EP16842174.1
申请日：2016-08-23
Applicant: Seoul Viosys Co. Ltd.
Inventor： LEE, Jin Woong , SHIN, Chan Seob , LEE, Keum Ju , LEE, Seom Geun , YANG, Myoung Hak
CPC classification number: H01L33/42 , G02F1/133603 , H01L33/00 , H01L33/10 , H01L33/325 , H01L33/387 , H01L33/46 , H01L33/62
Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arcsec.
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公开(公告)号：EP4060753A1
公开(公告)日：2022-09-21
申请号：EP20887672.2
申请日：2020-11-13
Applicant: Seoul Viosys Co., Ltd
Inventor： LEE, Seom Geun , JANG, Seong Kyu , RYU, Yong Woo , CHAE, Jong Hyeon
IPC: H01L33/38 , H01L33/08 , H01L33/42 , H01L25/075 , H01L27/12
Abstract: A light-emitting device for display according to an embodiment comprises: a first LED stack; a second LED stack located under the first LED stack; a third LED stack located under the second LED stack; a first bonding layer interposed between the second LED stack and the third LED stack; a second bonding layer interposed between the first LED stack and the second LED stack; a first planarization layer interposed between the second bonding layer and the second LED stack; a second planarization layer arranged on the first LED stack; first lower buried vias which are electrically connected respectively to a first conductive-type semiconductor layer and a second conductive-type semiconductor layer in the third LED stack after penetrating through the first planarization layer, the second LED stack, and the first bonding layer; and upper buried vias penetrating through the second planarization layer and the first LED stack, wherein widths of upper ends of the first lower buried vias and the upper buried vias are greater than widths of corresponding through-holes.
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