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    LIGHT EMITTING DIODE CHIP
    2.
    发明公开
    LIGHT EMITTING DIODE CHIP 审中-公开
    发光二极管芯片

    公开(公告)号：EP3264476A1

    公开(公告)日：2018-01-03

    申请号：EP17185126.4

    申请日：2011-06-13

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： HEO, Min Chan ,  JIN, Sang Ki ,  KIM, Jong Kyu ,  SHIN, Jin Cheoul ,  LEE, So Ra ,  LEE, Sum Geun

    IPC: H01L33/46 ,  H01L33/08 ,  H01L33/20 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

    CPC classification number: H01L33/46 ,  H01L33/08 ,  H01L33/20 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Exemplary embodiments of the present invention provide light emitting diode (LED) chips (100; 200; 200a). An LED chip (100; 200; 200a) according to an exemplary embodiment includes a substrate (21); a light emitting structure (30) arranged on the substrate (21); and an alternating lamination bottom structure (43) arranged under the substrate (21). The alternating lamination bottom structure (43) includes a plurality of dielectric pairs, each of the dielectric pairs including a first material layer having a first refractive index and a second material layer having a second refractive index, the first refractive index being greater than the second refractive index.

    Abstract translation: 本发明的示例性实施例提供了发光二极管（LED）芯片（100; 200; 200a）。 根据示例性实施例的LED芯片（100; 200; 200a）包括基板（21）;以及基板 设置在所述基板（21）上的发光结构（30）; 和布置在基底（21）下方的交替层压底部结构（43）。 交替层压底部结构（43）包括多个电介质对，每个电介质对包括具有第一折射率的第一材料层和具有第二折射率的第二材料层，第一折射率大于第二折射率 折射率。

    LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR
    3.
    发明公开
    LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR 审中-公开
    具有分布式布拉格反射器的发光二极管芯片

    公开(公告)号：EP3190634A1

    公开(公告)日：2017-07-12

    申请号：EP17153368.0

    申请日：2010-09-16

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： LEE, Chung Hoon ,  LEE, Sum Geun ,  JIN, Sang Ki ,  SHIN, Jin Cheol ,  KIM, Jong Kyu ,  LEE, So Ra

    IPC: H01L33/46 ,  H01L33/60 ,  H01L33/00

    CPC classification number: H01L33/46 ,  H01L33/0079 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

    Abstract: Disclosed herein are a light emitting diode chip and a light emitting diode package having a distributed Bragg reflector. The light emitting diode chip includes a substrate, a light emitting structure positioned on an upper portion of the substrate and including an active layer interposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector that reflects light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of 90% or more for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.

    Abstract translation: 本文公开了具有分布式布拉格反射器的发光二极管芯片和发光二极管封装。 发光二极管芯片包括衬底，位于衬底的上部并且包括插入在第一导电型半导体层和第二导电型半导体层之间的有源层的发光结构以及分布式布拉格反射器， 反射从发光结构发射的光。 分布式布拉格反射器对于蓝色波长范围中的第一波长的光，绿色波长范围中的第二波长的光和红色波长范围中的第三波长的光具有90％或更大的反射率。

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